公开(公告)号：US20160218385A1

公开(公告)日：2016-07-28

申请号：US15092260

申请日：2016-04-06

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Chihiro HIRAIWA ,  Masatoshi MAJIMA ,  Tetsuya KUWABARA ,  Tomoyuki AWAZU ,  Naho MIZUHARA ,  Toshio UEDA ,  Hideyuki DOI ,  Toshiyuki KURAMOTO

IPC: H01M8/1007 ,  H01M8/1006 ,  H01M8/00

CPC classification number: H01M8/1007 ,  B01D53/32 ,  B01D2257/406 ,  B01D2258/0216 ,  H01M4/8885 ,  H01M8/004 ,  H01M8/0232 ,  H01M8/0245 ,  H01M8/0247 ,  H01M8/0637 ,  H01M8/086 ,  H01M8/1006 ,  H01M8/124 ,  H01M8/222 ,  H01M2008/1095 ,  H01M2008/1293 ,  H01M2008/147 ,  Y02E60/521 ,  Y02E60/525 ,  Y02E60/526 ,  Y02E60/566 ,  Y02P70/56

Abstract: Provided are a gas decomposition component, a method for producing a gas decomposition component, and a power generation apparatus. A gas decomposition component 10 includes a cylindrical-body MEA 7 including a first electrode 2 disposed on an inner-surface side, a second electrode 5 disposed on an outer-surface side, and a solid electrolyte 1 sandwiched between the first electrode and the second electrode; and a porous metal body 11s inserted on the inner-surface side of the cylindrical-body MEA and electrically connected to the first electrode, wherein the gas decomposition component further includes a porous conductive-paste-coated layer 11 g formed on an inner circumferential surface of the first electrode, and a metal mesh sheet 11 a disposed on an inner circumferential side of the conductive-paste-coated layer, and an electrical connection between the first electrode and the porous metal body is established through the conductive-paste-coated layer and the metal mesh sheet.

Abstract translation: 提供气体分解成分，气体分解成分的制造方法以及发电装置。 气体分解成分10包括：圆筒体MEA7，其包括设置在内表面侧的第一电极2，设置在外表面侧的第二电极5和夹在第一电极和第二电极之间的固体电解质1 电极; 以及插入在圆筒体MEA的内表面侧并与第一电极电连接的多孔金属体11s，其中气体分解成分还包括形成在内周面上的多孔导电糊涂层11g 以及设置在导电糊剂涂覆层的内周侧上的金属网片11a，并且通过导电膏涂层形成第一电极和多孔金属体之间的电连接 和金属网片。

公开(公告)号：US20180233562A1

公开(公告)日：2018-08-16

申请号：US15516148

申请日：2015-08-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Taro NISHIGUCHI ,  Keiji WADA ,  Jun GENBA ,  Hironori ITOH ,  Hideyuki DOI ,  Kenji HIRATSUKA

IPC: H01L29/16 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02 ,  H01L29/34

CPC classification number: H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02658 ,  H01L29/34

Abstract: A silicon carbide epitaxial substrate includes: a silicon carbide single crystal substrate; and an epitaxial layer. The silicon carbide single crystal substrate has a diameter of not less than 100 mm. The epitaxial layer has a thickness of not less than 10 μm. The epitaxial layer has a carrier concentration of not less than 1×1014 cm−3 and not more than 1×1016 cm−3. A ratio of a standard deviation of the carrier concentration in a plane of the epitaxial layer to an average value of the carrier concentration in the plane is not more than 10%. The epitaxial layer has a main surface. The main surface has an arithmetic mean roughness Sa of not more than 0.3 nm. An area density of pits originated from a threading screw dislocation is not more than 1000 cm−2. Each of the pits has a maximum depth of not less than 8 nm.