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    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
    1.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure 有权
    具有双掩埋异质结构的反射半导体光放大器（R-SOA）

    公开(公告)号：US07920322B2

    公开(公告)日：2011-04-05

    申请号：US11924772

    申请日：2007-10-26

    申请人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    发明人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC分类号： H01S5/00 ,  H01L29/06 ,  H01L33/20

    CPC分类号： G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    摘要： Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    摘要翻译： 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD)
    2.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) 有权
    反射半导体光放大器（R-SOA）和超发光二极管（SLD）

    公开(公告)号：US08363314B2

    公开(公告)日：2013-01-29

    申请号：US12929970

    申请日：2011-02-28

    申请人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    发明人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC分类号： H01S5/227

    CPC分类号： G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    摘要： Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    摘要翻译： 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD)
    3.
    发明申请
    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) 有权
    反射半导体光放大器（R-SOA）和超发光二极管（SLD）

    公开(公告)号：US20110150406A1

    公开(公告)日：2011-06-23

    申请号：US12929970

    申请日：2011-02-28

    申请人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    发明人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC分类号： G02B6/10

    CPC分类号： G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    摘要： Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    摘要翻译： 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    System and method for switching channels using tunable laser diodes
    4.
    发明授权
    System and method for switching channels using tunable laser diodes 有权
    使用可调激光二极管切换通道的系统和方法

    公开(公告)号：US07599624B2

    公开(公告)日：2009-10-06

    申请号：US11252401

    申请日：2005-10-17

    申请人： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    发明人： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    IPC分类号： H04J14/00

    CPC分类号： H04J14/0282 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J2014/0253

    摘要： A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

    摘要翻译： 信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率， 数据结构，并正确使用必要的光学元件。 此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。 此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

    External cavity laser light source
    10.
    发明授权
    External cavity laser light source 有权
    外腔激光光源

    公开(公告)号：US08107508B2

    公开(公告)日：2012-01-31

    申请号：US12541561

    申请日：2009-08-14

    申请人： Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

    发明人： Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

    IPC分类号： H01S3/08

    CPC分类号： H01S5/14 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/164 ,  H01S5/2231

    摘要： Provided is an external cavity laser light source. The light source includes a substrate, an optical waveguide, and a current blocking layer. The optical waveguide includes a passive waveguide layer, a lower clad layer, an active layer, and an upper clad layer that are sequentially stacked on the substrate and is divided into regions including a linear active waveguide region, a bent active waveguide region, a tapered waveguide region, and a window region. The current blocking layer was formed an outside of the active layer to reduce leakage current. The linear and bent active waveguide regions have a buried heterostructure (BH), and the tapered waveguide region and the window region have a buried ridge stripe (BRS) structure. The passive waveguide layer a width substantially equal to a maximal width of the tapered waveguide region at least in the bent active waveguide region, the tapered waveguide region, and the window region.

    摘要翻译： 提供外腔激光光源。 光源包括基板，光波导和电流阻挡层。 光波导包括顺序层叠在基板上的无源波导层，下包层，有源层和上覆层，并分为包括线性有源波导区域，弯曲有源波导区域，锥形 波导区域和窗口区域。 电流阻挡层形成在有源层的外侧，以减少泄漏电流。 线性和弯曲的有源波导区域具有掩埋异质结构（BH），并且锥形波导区域和窗口区域具有掩埋脊条纹（BRS）结构。 至少在弯曲的有源波导区域，锥形波导区域和窗口区域中，无源波导层的宽度基本上等于锥形波导区域的最大宽度。