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    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
    1.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure 有权
    具有双掩埋异质结构的反射半导体光放大器（R-SOA）

    公开(公告)号：US07920322B2

    公开(公告)日：2011-04-05

    申请号：US11924772

    申请日：2007-10-26

    Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC: H01S5/00 ,  H01L29/06 ,  H01L33/20

    CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD)
    2.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) 有权
    反射半导体光放大器（R-SOA）和超发光二极管（SLD）

    公开(公告)号：US08363314B2

    公开(公告)日：2013-01-29

    申请号：US12929970

    申请日：2011-02-28

    Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC: H01S5/227

    CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD)
    3.
    发明申请
    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) 有权
    反射半导体光放大器（R-SOA）和超发光二极管（SLD）

    公开(公告)号：US20110150406A1

    公开(公告)日：2011-06-23

    申请号：US12929970

    申请日：2011-02-28

    Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC: G02B6/10

    CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    System and method for switching channels using tunable laser diodes
    4.
    发明授权
    System and method for switching channels using tunable laser diodes 有权
    使用可调激光二极管切换通道的系统和方法

    公开(公告)号：US07599624B2

    公开(公告)日：2009-10-06

    申请号：US11252401

    申请日：2005-10-17

    Applicant: Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    Inventor： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    IPC: H04J14/00

    CPC classification number: H04J14/0282 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J2014/0253

    Abstract: A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

    Abstract translation: 信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率， 数据结构，并正确使用必要的光学元件。 此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。 此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

    Method of fabricating semiconductor optical device
    5.
    发明申请
    Method of fabricating semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US20060189016A1

    公开(公告)日：2006-08-24

    申请号：US11293615

    申请日：2005-12-02

    Applicant: Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    Inventor： Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    IPC: H01L21/00

    CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

    Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

    Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

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