ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20160197304A1

    公开(公告)日:2016-07-07

    申请号:US14741966

    申请日:2015-06-17

    Abstract: An organic light emitting display device includes a thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes, a pixel electrode connected to the thin film transistor, the pixel electrode including a first layer, a second layer disposed on the first layer and including silver, and a third layer including a carbon-based material and covering an upper portion and lateral surface of the second layer, an organic emission layer including an organic light emitting member and disposed on the pixel electrode, and a common electrode disposed on the organic emission layer.

    Abstract translation: 一种有机发光显示装置,包括:薄膜晶体管,包括半导体层,栅极电极,源极和漏极,连接到薄膜晶体管的像素电极,所述像素电极包括第一层,第二层, 第一层并且包括银,以及包括碳基材料并覆盖第二层的上部和侧表面的第三层,包括有机发光部件并设置在像素电极上的有机发射层和公共电极 设置在有机发光层上。

    ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    阵列基板及其制造方法

    公开(公告)号:US20140349426A1

    公开(公告)日:2014-11-27

    申请号:US14456675

    申请日:2014-08-11

    Abstract: An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.

    Abstract translation: 阵列基板包括: 设置在基板上的基板,栅极线和数据线,与栅极线和数据线电连接的薄膜晶体管(“TFT”),设置在基板上的遮光部件和第一滤色器 第二滤色器设置在基板上。 遮光构件覆盖第一滤色器的一部分,并且第二滤色器覆盖遮光构件的一部分。

    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME
    6.
    发明申请
    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME 审中-公开
    薄膜晶体管,其制造方法和具有该薄膜晶体管的液晶显示装置

    公开(公告)号:US20160380113A1

    公开(公告)日:2016-12-29

    申请号:US15071182

    申请日:2016-03-15

    Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

    Abstract translation: 薄膜晶体管包括衬底,设置在衬底上的栅电极,设置在栅电极上的有源图案,电耦合到有源图案的源电极和电耦合到有源图案的漏电极。 有源图案包括与源电极和漏电极重叠的第一沟道层和与栅电极重叠的第二沟道层。 第二沟道层包括多个高电子迁移率区域。 每个高电子迁移率区域的电子迁移率大于第一沟道层的电子迁移率。

    THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管显示面板及其制造方法

    公开(公告)号:US20150021602A1

    公开(公告)日:2015-01-22

    申请号:US14508766

    申请日:2014-10-07

    Abstract: A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. Source and drain electrodes of the thin film transistor each include a lower layer and an upper layer. A first passivation layer contacts the lower layer of the source and drain electrodes but does not contact the upper layer of the source and drain electrodes, and a second passivation layer is disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride.

    Abstract translation: 一种薄膜晶体管阵列面板和能够形成由不同材料制成的绝缘层的制造方法,用于与氧化物半导体和第二部分接触的部分,而不需要额外的工艺。 薄膜晶体管的源极和漏极各自包括下层和上层。 第一钝化层接触源电极和漏电极的下层,但不接触源极和漏极的上层,并且第二钝化层设置在源极和漏极的上层。 第一钝化层可以由氧化硅制成,并且第二钝化可以由氮化硅制成。

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