公开(公告)号：US09831350B2

公开(公告)日：2017-11-28

申请号：US14886214

申请日：2015-10-19

Applicant: Samsung Display CO., Ltd.

Inventor： Yeon-Keon Moon ,  Je-Hun Lee

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L21/467 ,  H01L21/475 ,  H01L21/47 ,  H01L21/3213 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/32139 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78642

Abstract: Provided is a thin film transistor (TFT) that includes a first electrode on a substrate separated from a second electrode, an oxide semiconductor pattern on the second electrode including a channel region, a third electrode on the oxide semiconductor pattern, a first insulating layer on the substrate including the third electrode including first contact holes exposing a part of the first electrode, a part of the second electrode, and a part of the third electrode, a gate electrode on the first insulating layer and corresponding to a part of the oxide semiconductor pattern, a second insulating layer on the substrate including the gate electrode including a second contact hole corresponding to the first contact hole that exposes a part of the second electrode, and a pixel electrode on the second insulating layer electrically connected to the second electrode through the first contact hole and the second contact hole.

公开(公告)号：US20150188399A1

公开(公告)日：2015-07-02

申请号：US14505712

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H02K41/02 ,  H02K7/09

CPC classification number: H02K41/031 ,  H01L21/677 ,  H01L21/67709 ,  H01L21/67712 ,  H01L21/6776 ,  H02K7/09

Abstract: Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Abstract translation: 公开了一种通过磁悬浮转移能够稳定地转移衬底的衬底的装置。 该装置包括：衬底台，包括衬底装载单元，设置在衬底台的第一端处的第一引导块，并且包括第一磁体发生器，设置在衬底台的第二端处的第二引导块，并且包括第二磁体 发电机，容纳所述第一磁体发生器并包括第三磁体发生器的第一导轨和容纳所述第二磁体发生器并包括第四磁体发生器的第二导轨。 第一磁体发生器和第三磁体发生器相互施加排斥力，第二磁体发生器和第四磁体发生器相互施加排斥力。

公开(公告)号：US20150200077A1

公开(公告)日：2015-07-16

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki FUKASAWA ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。

公开(公告)号：US09246377B2

公开(公告)日：2016-01-26

申请号：US14505712

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: B65G35/00 ,  H02K41/03 ,  H01L21/677 ,  H02K7/09

CPC classification number: H02K41/031 ,  H01L21/677 ,  H01L21/67709 ,  H01L21/67712 ,  H01L21/6776 ,  H02K7/09

Abstract: Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Abstract translation: 公开了一种通过磁悬浮转移能够稳定地转移衬底的衬底的装置。 该装置包括：衬底台，包括衬底装载单元，设置在衬底台的第一端处的第一引导块，并且包括第一磁体发生器，设置在衬底台的第二端处的第二引导块，并且包括第二磁体 发电机，容纳所述第一磁体发生器并包括第三磁体发生器的第一导轨和容纳所述第二磁体发生器并包括第四磁体发生器的第二导轨。 第一磁体发生器和第三磁体发生器相互施加排斥力，第二磁体发生器和第四磁体发生器相互施加排斥力。

公开(公告)号：US09644270B2

公开(公告)日：2017-05-09

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Takayuki Fukasawa ,  Sang-Won Shin

IPC: C23C16/50 ,  H01L29/786 ,  H01L29/66 ,  H01L21/67 ,  C23C16/40 ,  C23C16/509 ,  H01L21/677 ,  H01L21/3105 ,  C23C16/46 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

公开(公告)号：US09530622B2

公开(公告)日：2016-12-27

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。