公开(公告)号：US20140151216A1

公开(公告)日：2014-06-05

申请号：US13900231

申请日：2013-05-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang-Woo Sohn ,  Hyung-Jun Kim

IPC: H01L21/02

CPC classification number: C23C14/564 ,  C23C14/352 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/347 ,  H01J37/3473 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: A sputtering apparatus includes a chamber. A substrate supporting part is disposed in the chamber. A plurality of targets face the substrate supporting part. A target supporting part is disposed under each of the targets to hold the target. A first ground part is disposed between two target supporting parts adjacent to each other and includes a cover separable therefrom. A second ground part is disposed between two target supporting parts adjacent to each other, except for where the first ground part is disposed.

Abstract translation: 溅射装置包括室。 衬底支撑部分设置在腔室中。 多个目标面向基板支撑部。 目标支撑部件设置在每个目标下以保持目标。 第一接地部设置在彼此相邻的两个目标支撑部之间，并且包括可与其分离的盖。 第二接地部设置在彼此相邻的两个目标支撑部之间，除了设置第一接地部分之外。

公开(公告)号：US20150200077A1

公开(公告)日：2015-07-16

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki FUKASAWA ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。

公开(公告)号：US09644270B2

公开(公告)日：2017-05-09

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Takayuki Fukasawa ,  Sang-Won Shin

IPC: C23C16/50 ,  H01L29/786 ,  H01L29/66 ,  H01L21/67 ,  C23C16/40 ,  C23C16/509 ,  H01L21/677 ,  H01L21/3105 ,  C23C16/46 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

公开(公告)号：US09530622B2

公开(公告)日：2016-12-27

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。

公开(公告)号：US09405163B2

公开(公告)日：2016-08-02

申请号：US14664189

申请日：2015-03-20

Applicant: Samsung Display Co., LTD.

Inventor： Hyun-Ju Kang ,  Sang-Woo Sohn ,  Sang-Won Shin ,  Chang-Oh Jeong

IPC: G02F1/1368 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/417 ,  H01L29/423 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136222 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908

Abstract: A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer.

Abstract translation: 薄膜晶体管基板包括基底基板和薄膜晶体管。 基板包括栅极线和数据线。 薄膜晶体管连接到栅极线和数据线。 薄膜晶体管包括栅电极，半导体图案和源极，漏极电极。 栅电极设置在基底基板上。 半导体图案与栅电极重叠。 源极，漏极彼此间隔开。 源电极包括第一源极层，设置在第一源极层上的第二源极层和设置在第一源极层和第二源极层之间的第一扩散阻挡层。 漏极包括第一漏极层，设置在第一漏极层上的第二漏极层和设置在第一漏极层和第二漏极层之间的第二扩散阻挡层。