公开(公告)号：US20160027707A1

公开(公告)日：2016-01-28

申请号：US14794813

申请日：2015-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yoon RYU ,  WOOSEOK KO ,  Souk KIM ,  Yusin YANG ,  SANGKIL LEE ,  CHUNGSAM JUN ,  Kwanwoo RYU

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L21/67173 ,  H01L22/20

Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

Abstract translation: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中，对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析，确定是否满足形成第一层和/或图案所引起的参数。

公开(公告)号：US20200176292A1

公开(公告)日：2020-06-04

申请号：US16532920

申请日：2019-08-06

Applicant: Samsung Electronics Co,Ltd.

Inventor： Sung Yoon RYU ,  Joonseo SONG ,  Souk KIM ,  Younghoon SOHN ,  Yusin YANG ,  Chihoon LEE

IPC: H01L21/67 ,  G01B11/24 ,  G06T7/00

Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.

公开(公告)号：US20200182783A1

公开(公告)日：2020-06-11

申请号：US16566100

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhong JUN ,  Sung Yoon RYU ,  Souk KIM ,  Younghoon SOHN ,  Yusin YANG

IPC: G01N21/3581 ,  G01N21/39 ,  G02F1/13363

Abstract: Disclosed are a measuring apparatus and a substrate analysis method using the same. The measuring apparatus includes a light source that generates a laser beam, a beam splitter that splits the laser beam into a probe laser beam and a reference laser beam, an antenna that receives the probe laser beam to produce a terahertz beam, an electro-optical device that receives the reference laser beam and the terahertz beam to change a vertical polarization component and a horizontal polarization component of the reference laser beam, based on intensity of the terahertz beam, and a streak camera that obtains a time-domain signal corresponding to a ratio between the vertical polarization component and the horizontal polarization component.

公开(公告)号：US20190114755A1

公开(公告)日：2019-04-18

申请号：US15937551

申请日：2018-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Sil LEE ,  Sung Yoon RYU ,  Young Hoon SOHN ,  Chung Sam JUN

IPC: G06T7/00 ,  G01J5/02 ,  G01N25/72 ,  H04N5/33

Abstract: According to one embodiment, a semiconductor chip inspection device includes a conveyor, an image capture device, and an analysis system. The conveyor provides a transfer path on which a semiconductor chip heated during a manufacturing process is moved. The image capture device is disposed above the transfer path and is configured to generate a thermographic image by imaging the semiconductor chip including capturing a plurality of thermographic images at different focal points in a thickness direction of the semiconductor chip. The analysis system is configured to compare the plurality of thermographic images with a plurality of standard images provided in advance, and to detect a region in which a temperature differential between a thermographic image and a respective standard image exceeds a reference value.

公开(公告)号：US20180202942A1

公开(公告)日：2018-07-19

申请号：US15855520

申请日：2017-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Hyeong KANG ,  Kang Woong KO ,  Sung Yoon RYU ,  Gil Woo SONG ,  Jae Hyung AHN ,  Chul Hyung YOO ,  Kyoung Hwan LEE ,  Sung Ho JANG ,  Yong Ju JEON ,  Hyoung Jo JEON

IPC: G01N21/95 ,  H01L21/66 ,  H01L21/67

CPC classification number: G01N21/9501 ,  G01N21/31 ,  G01N21/95607 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20

Abstract: A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.

公开(公告)号：US20170363418A1

公开(公告)日：2017-12-21

申请号：US15464896

申请日：2017-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yoon RYU ,  Younghoon SOHN ,  Yusin YANG ,  Chungsam JUN ,  Yunjung JEE

IPC: G01B11/06

CPC classification number: G01B11/06 ,  G01B9/02001 ,  G01B9/02021 ,  G01B11/0616 ,  G01B11/0625 ,  G01B11/0675 ,  G01B2210/56

Abstract: Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.