APPARATUS AND METHOD FOR MEASURING THICKNESS

    公开(公告)号:US20170363418A1

    公开(公告)日:2017-12-21

    申请号:US15464896

    申请日:2017-03-21

    Abstract: Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.

    SEMICONDUCTOR SUBSTRATE INSPECTION DEVICE

    公开(公告)号:US20250123243A1

    公开(公告)日:2025-04-17

    申请号:US18670118

    申请日:2024-05-21

    Abstract: A semiconductor substrate inspection device is provided and includes: a function generator that generates a first signal and a second signal; an ultrasonic generator that receives the first signal generated from the function generator, generates an ultrasonic wave based on the first signal, and generates a surface wave signal on an upper surface of a substrate using the ultrasonic wave; and an electron beam measurer that inspects the surface wave signal, wherein the electron beam measurer includes: a laser light source that receives the second signal generated from the function generator and generates a first pulse laser beam based on the second signal; an electron beam generator that receives the first pulse laser beam and generates an electron beam that is emitted onto the upper surface of the substrate; and a backscattered electron detector that detects backscattered electrons generated based on the electron beam being incident on the substrate.

    TEST APPARATUS AND TEST METHOD THEREOF

    公开(公告)号:US20220404395A1

    公开(公告)日:2022-12-22

    申请号:US17721522

    申请日:2022-04-15

    Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

    SUBSTRATE INSPECTION DEVICE
    8.
    发明申请

    公开(公告)号:US20210140899A1

    公开(公告)日:2021-05-13

    申请号:US16887284

    申请日:2020-05-29

    Abstract: A substrate inspection device including a light source, a polarizer, first and second compensators, an analyzer, a light splitter configured to receive reflected light reflected by the substrate to split the reflected light into first split light and second split light, a first detector and a second detector configured to detect the first split light and the second split light, respectively, and a controller configured to control the first and second detectors differently from each other, may be provided.

    SUBSTRATE INSPECTION METHOD AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20200209165A1

    公开(公告)日:2020-07-02

    申请号:US16709222

    申请日:2019-12-10

    Abstract: Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.

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