SEMICONDUCTOR DEVICES
    2.
    发明申请

    公开(公告)号:US20240379545A1

    公开(公告)日:2024-11-14

    申请号:US18427135

    申请日:2024-01-30

    Abstract: A semiconductor device comprising: a substrate; and a conductive structure on the substrate, wherein the conductive structure comprises: a lower conductive structure comprising a lower conductive pattern; and an upper conductive structure comprising an upper conductive pattern, wherein the upper conductive structure is on the lower conductive structure, wherein at least one of a first side surface of the lower conductive pattern or a second side surface of the upper conductive pattern comprises a rough surface, and wherein a first width of a lower surface of the upper conductive pattern in a first direction parallel to a lower surface of the substrate is substantially equal to or less than a second width of an upper surface of the lower conductive pattern in the first direction.

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