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公开(公告)号：US09082909B2
公开(公告)日：2015-07-14
申请号：US14148009
申请日：2014-01-06
Inventor： Yong-chul Cho , Yong-tak Lee , Chang-young Park , Byung-hoon Na , Yong-hwa Park , Gun-wu Ju , Hee-ju Chio
IPC: H01L31/0352
CPC classification number: H01L31/035209 , G02F1/01725 , G02F2001/0175 , G02F2202/101
Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.
Abstract translation: 提供了一种光学器件，其包括有源层，该有源层包括至少两个外部屏障和至少一个耦合量子阱，所述至少一个耦合量子阱中的每一个被夹在所述至少两个外部屏障之间。 所述至少一个耦合量子阱中的每一个包括至少三个量子阱层和插入在所述至少三个量子层之间的至少两个耦合屏障。 所述至少两个耦合屏障具有高于地平面并且低于所述至少两个外部屏障的能量水平的势能。
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公开(公告)号：US10698237B2
公开(公告)日：2020-06-30
申请号：US15890732
申请日：2018-02-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chang-young Park , Yong-hwa Park , Sang-hun Lee
Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.
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Patent Agency Ranking
公开(公告)号：US09671627B2
公开(公告)日：2017-06-06
申请号：US14298391
申请日：2014-06-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-hun Lee , Chang-young Park , Yong-hwa Park
IPC: G02F1/03 , G02F1/017 , H01L27/146 , G02F1/015 , G02F1/21
CPC classification number: G02F1/017 , G02F1/01716 , G02F2001/0157 , G02F2001/213 , H01L27/14625 , H01L27/14685
Abstract: Disclosed are a transparent optical shutter which may be manufactured at the wafer level, and a method of manufacturing a transparent optical shutter at the wafer level. In the disclosed optical shutter, a polymer-based material is used as a transparent protective layer for ensuring the mechanical or chemical stability of the optical shutter, and thus, the shutter may be manufactured at the wafer level in large quantities. Also, a layer which is optically transparent and has excellent heat conductivity is disposed under the transparent protective layer.
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4.发明授权Large-area transmissive type optical image modulator and method of manufacturing the same and optical apparatus including transmissive type optical image modulator 有权大面积透射型光学图像调制器及其制造方法以及包括透射型光学图像调制器的光学装置公开(公告)号：US09182614B2
公开(公告)日：2015-11-10
申请号：US13725010
申请日：2012-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong-chul Cho , Sang-hun Lee , Yong-hwa Park , Chang-young Park , Jong-oh Kwon , Jang-woo You , Hee-sun Yoon
CPC classification number: G02F1/00 , G01C3/08 , G02F1/015 , G02F2001/0157 , G02F2203/12 , H01L31/18
Abstract: A large-area transmissive type optical image modulator, a method of manufacturing the same, and an optical apparatus including the transmissive type optical image modulator are provided. The large-area transmissive type optical image modulator includes: a base substrate; a first expitaxial layer formed on the base substrate; a second expitaxial layer formed on the first expitaxial layer; a first electrode formed on the first expitaxial layer and spaced apart from the second expitaxial layer; a second electrode formed on the second expitaxial layer; and a transparent substrate covering the second expitaxial layer and the second electrode, wherein the base substrate includes a through hole corresponding to a light emitting area, and the first expitaxial layer may include an n-type or p-type doping material.
Abstract translation: 提供了一种大面积透射型光学图像调制器，其制造方法和包括透射型光学图像调制器的光学装置。 大面积透射型光学图像调制器包括：基底; 形成在所述基底基板上的第一外延层; 形成在第一外延层上的第二外延层; 形成在所述第一外延层上并与所述第二外延层隔开的第一电极; 形成在所述第二外延层上的第二电极; 以及覆盖所述第二外延层和所述第二电极的透明基板，其中所述基底基板包括对应于发光区域的通孔，并且所述第一外延层可以包括n型或p型掺杂材料。
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公开(公告)号：US09904078B2
公开(公告)日：2018-02-27
申请号：US14314798
申请日：2014-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chang-young Park , Yong-hwa Park , Sang-hun Lee
CPC classification number: G02F1/017 , G01S7/4814 , G02F2201/16
Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.
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公开(公告)号：US09429775B2
公开(公告)日：2016-08-30
申请号：US13947650
申请日：2013-07-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-hun Lee , Chang-young Park , Jong-oh Kwon , Yong-hwa Park
IPC: G02F1/015 , G02F1/017 , G02F1/21 , H01L31/0224 , H01L31/0352 , B82Y20/00
CPC classification number: G02F1/015 , B82Y20/00 , G02F1/017 , G02F1/01708 , G02F1/218 , G02F2001/213 , G02F2203/11 , G02F2203/12 , H01L31/0224 , H01L31/035236
Abstract: An infrared transmission large-area shutter is provided. The infrared transmission large-area shutter includes a first contact layer on a substrate, a plurality of stacks formed in a two-dimensional (2D) array pattern on a first region of the first contact layer, each stack comprising a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer which are formed sequentially in this order on the first contact layer, a first electrode formed on the first contact layer, a plurality of second electrodes on the second contact layers, a first polymer layer that surrounds sidewalls of the plurality of stacks on the first contact layer, and a second polymer layer, which is transparent to infrared rays, to cover the second electrode on the second contact layer. A through hole corresponding to the plurality of stacks is formed in the substrate.
Abstract translation: 提供红外线传输大面积快门。 红外线传输大面积快门包括在基板上的第一接触层，在第一接触层的第一区域上以二维（2D）阵列图案形成的多个堆叠，每个堆叠包括下反射层， 有源层，上反射层和第二接触层，其依次形成在第一接触层上，形成在第一接触层上的第一电极，第二接触层上的多个第二电极，第一接触层 层，其围绕第一接触层上的多个叠层的侧壁，以及对红外线透明的第二聚合物层，以覆盖第二接触层上的第二电极。 在基板上形成与多个堆叠对应的通孔。
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7.发明授权Optical device including three-coupled quantum well structure having multi-energy level 有权光器件包括具有多能级的三耦合量子阱结构公开(公告)号：US09190545B2
公开(公告)日：2015-11-17
申请号：US14283797
申请日：2014-05-21
Inventor： Yong-chul Cho , Yong-tak Lee , Chang-young Park , Byung-hoon Na , Yong-hwa Park , Gun-wu Ju
IPC: H01S5/34 , H01L31/0352 , H01L31/0232 , G02F1/017 , H01L33/06 , G02F1/015
CPC classification number: H01L31/035236 , G01S7/4914 , G01S17/36 , G01S17/89 , G02F1/017 , G02F1/01725 , G02F2001/0155 , G02F2201/34 , H01L31/02327 , H01L33/06
Abstract: An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.
Abstract translation: 提供一种光学装置，其包括具有两个外部屏障的有源层和两个外部屏障之间的耦合的量子阱。 耦合量子阱包括第一量子阱层，第二量子阱层，第三量子阱层，第一量子阱层和第二量子阱层之间的第一耦合势垒以及第二量子阱之间的第二耦合势垒 层和第三量子阱层。 第一量子阱层的厚度和第三量子阱层的厚度各自不同于第二量子阱层的厚度。 此外，第一量子阱层的能级和第三量子阱层的能级各自不同于第二量子阱层的能级。
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