公开(公告)号：US20180145216A1

公开(公告)日：2018-05-24

申请号：US15718484

申请日：2017-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Yul LEE ,  Jung Kyu PARK ,  Jae Sung HYUN

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/46 ,  H01L33/42 ,  H01L33/44 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0058

Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.

公开(公告)号：US20140159081A1

公开(公告)日：2014-06-12

申请号：US14013678

申请日：2013-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Suk LEE ,  Ok Hyun KIM ,  Dong Yul LEE ,  Dong Ju LEE ,  Jeong Wook LEE ,  Heon Ho LEE

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract translation: 提供一种形成半导体层的方法。 该方法包括在衬底上形成多个纳米棒并在衬底上形成下半导体层，以暴露至少部分纳米棒。 去除纳米棒以在下半导体层中形成空隙，并且在半导体层的下部和空隙上形成上半导体层。

公开(公告)号：US20170077346A1

公开(公告)日：2017-03-16

申请号：US15341259

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

公开(公告)号：US20160350572A1

公开(公告)日：2016-12-01

申请号：US15114982

申请日：2014-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Il KIM ,  Young Jun MOON ,  Tae Sang PARK ,  Kyung Woon JANG ,  Seung Hee OH ,  Chang Kyu CHUNG ,  Dong Yul LEE

IPC: G06K9/00

CPC classification number: G06K9/0002 ,  G06F1/169 ,  G06F3/03547 ,  G06F2203/0338 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2924/15192

Abstract: Disclosed are fingerprint recognition device having an improved structure to enable a driving device of an integrated circuit to have durability, a manufacturing method therefor, and an electronic device. The fingerprint recognition device comprise: an integrated circuit electrically connected to at least one sensor electrode; a first circuit board located at an upper portion of the integrated circuit and provided with the at least one sensor electrode; a second circuit board electrically connected to the first circuit board and located at under the integrated circuit; a molding layer provided under the first circuit board to surround the integrated circuit so as to protect the integrated circuit from the outside; and a connection part electrically connecting the first circuit board and the second circuit board.

Abstract translation: 公开了一种具有改进的结构以使集成电路的驱动装置具有耐久性的指纹识别装置，其制造方法和电子装置。 指纹识别装置包括：电连接到至少一个传感器电极的集成电路; 位于所述集成电路的上部并设置有所述至少一个传感器电极的第一电路板; 电连接到第一电路板并位于集成电路下方的第二电路板; 设置在第一电路板下方以围绕集成电路以便将集成电路从外部保护的模制层; 以及电连接第一电路板和第二电路板的连接部。