公开(公告)号：US20130183836A1

公开(公告)日：2013-07-18

申请号：US13693795

申请日：2012-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui-seok KIM ,  Sang-kyu BANG ,  Soo-hyun CHO ,  Choo-ho KIM ,  Won-soo JI

IPC: H01L21/263

CPC classification number: H01L21/2633 ,  H01L21/76898 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods of forming through-silicon vias by using laser ablation. A method includes, laser drilling to form a plurality of grooves by irradiating a laser beam onto an upper surface of a silicon wafer, and grinding a lower surface of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the lower surface of the silicon wafer.

Abstract translation: 通过使用激光烧蚀形成穿硅通孔的方法。 一种方法包括：激光钻孔以通过将激光束照射到硅晶片的上表面上来形成多个凹槽，以及研磨硅晶片的下表面以形成多个穿硅通孔，以通过使 硅晶片的下表面。

公开(公告)号：US20170012188A1

公开(公告)日：2017-01-12

申请号：US15195329

申请日：2016-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hun-yong PARK ,  Sang-hyun LEE ,  Gam-han YONG ,  Eui-seok KIM

IPC: H01L33/60 ,  H01L33/58 ,  H01L33/50

CPC classification number: H01L33/60 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L2224/16 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00012

Abstract: A light-emitting apparatus includes a reflective layer including a cavity that penetrates the reflective layer from a top surface to a bottom surface of the reflective layer; a light-emitting device disposed in the cavity, the light-emitting device including a light-emitting stack and an electrode connected to the light-emitting stack at a bottom surface of the light-emitting stack; and a wavelength conversion layer that fills the cavity and covers a top surface and a side surface of the light-emitting device, wherein the wavelength conversion layer exposes at least a portion of the electrode to an outside.

Abstract translation: 发光装置包括反射层，反射层包括从反射层的顶表面到底表面穿透反射层的空腔; 设置在所述空腔中的发光器件，所述发光器件包括发光叠层和在所述发光叠层的底表面处连接到所述发光叠层的电极; 以及波长转换层，其填充所述空腔并覆盖所述发光器件的顶表面和侧表面，其中所述波长转换层将所述电极的至少一部分暴露于外部。

公开(公告)号：US20140017837A1

公开(公告)日：2014-01-16

申请号：US13844742

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eui-seok KIM ,  Choo-ho Kim ,  Soo-Hyun Cho ,  Won-soo Ji

IPC: H01L33/48

CPC classification number: H01L33/48 ,  H01L24/97 ,  H01L33/0095 ,  H01L2224/48091 ,  H01L2924/12036 ,  H01L2924/1204 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods of cutting silicon substrates having a light-emitting element package. The method includes preparing a silicon substrate on which a plurality of light-emitting element chips are mounted and a transparent material layer that covers the light-emitting element chips is formed; removing the transparent material layer between the light-emitting element chips along a predetermined cutting line by using a mechanical cutting method; forming a scribing line corresponding to the predetermined cutting line on the silicon substrate by using a laser processing method; and cutting the silicon substrate to form individual light-emitting element packages by applying a mechanical impact to the silicon substrate along the scribing line. The method may enhance productivity of a cutting process of light-emitting element packages, and may prevent damage or transformation of the transparent material layer.

Abstract translation: 切割具有发光元件封装的硅衬底的方法。 该方法包括制备其上安装有多个发光元件芯片的硅基板，并且形成覆盖发光元件芯片的透明材料层; 通过使用机械切割方法沿着预定切割线去除所述发光元件芯片之间的透明材料层; 通过使用激光加工方法在所述硅基板上形成与所述预定切割线对应的划线; 以及通过沿着所述划刻线对所述硅衬底施加机械冲击来切割所述硅衬底以形成单独的发光元件封装。 该方法可以提高发光元件封装的切割加工的生产率，并且可以防止透明材料层的损坏或变形。