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公开(公告)号：US20240087884A1
公开(公告)日：2024-03-14
申请号：US18513297
申请日：2023-11-17
发明人： GYEOM KIM , Dongwoo Kim , Jihye Yi , JINBUM KIM , Sangmoon Lee , Seunghun Lee
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8234 , H01L23/485 , H01L29/06 , H01L29/08 , H01L29/165 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02293 , H01L21/28518 , H01L21/76897 , H01L21/823431 , H01L21/823481 , H01L23/485 , H01L29/0673 , H01L29/0847 , H01L29/165 , H01L29/41766 , H01L29/41791 , H01L29/42392 , H01L29/66439 , H01L29/66553 , H01L29/6656 , H01L29/775 , H01L29/7848 , H01L29/78696
摘要： A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.
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公开(公告)号：US20220102217A1
公开(公告)日：2022-03-31
申请号：US17643935
申请日：2021-12-13
发明人： JAEMUN KIM , GYEOM KIM , SEUNG HUN LEE , DAHYE KIM , ILGYOU SHIN , SANGMOON LEE , KYUNGIN CHOI
IPC分类号： H01L21/8234 , H01L21/02 , H01L29/06 , H01L29/423 , H01L29/786 , H01L29/66 , H01L21/306 , H01L21/762
摘要： A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.
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公开(公告)号：US20220359678A1
公开(公告)日：2022-11-10
申请号：US17552446
申请日：2021-12-16
发明人： GYEOM KIM , JINBUM KIM , DONGWOO KIM , DONGSUK SHIN , SANGMOON LEE , SEUNG HUN LEE
IPC分类号： H01L29/417 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/78 , H01L29/786 , H01L21/02 , H01L29/40 , H01L29/66
摘要： A semiconductor device includes a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode provided on the channel pattern and extended in a first direction, and an active contact coupled to the source/drain pattern. The active contact includes a buried portion buried in the source/drain pattern and a contact portion on the buried portion. The buried portion includes an expansion portion provided in a lower portion of the source/drain pattern and a vertical extension portion connecting the contact portion to the expansion portion.
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公开(公告)号：US20200381251A1
公开(公告)日：2020-12-03
申请号：US16838089
申请日：2020-04-02
发明人： JAEMUN KIM , GYEOM KIM , SEUNG HUN LEE , DAHYE KIM , ILGYOU SHIN , SANGMOON LEE , KYUNGIN CHOI
IPC分类号： H01L21/02 , H01L29/06 , H01L29/423 , H01L29/786 , H01L21/306 , H01L21/762 , H01L29/66
摘要： A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.
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公开(公告)号：US20230420518A1
公开(公告)日：2023-12-28
申请号：US18088890
申请日：2022-12-27
发明人： GYEOM KIM , DAHYE KIM , JINBUM KIM , KYUNGBIN CHUN
IPC分类号： H01L29/08 , H01L29/06 , H01L29/161 , H01L29/423 , H01L29/775 , H01L21/02 , H01L29/66
CPC分类号： H01L29/0847 , H01L29/0673 , H01L29/161 , H01L29/42392 , H01L29/775 , H01L21/02532 , H01L29/66545 , H01L29/66439
摘要： An integrated circuit (IC) device includes a fin-type active region, a channel region on the fin-type active region, a gate line surrounding the channel region, an outer insulating spacer covering a sidewall of the gate line, a source/drain region on the fin-type active region, wherein the source/drain region includes a buffer layer including a portion in contact with the channel region and a portion in contact with the fin-type active region, the buffer layer including an edge buffer portion having a smaller thickness than other portions thereof at a position adjacent to the outer insulating spacer, a local buffer pattern including a wedge portion, the wedge portion filling a space defined by the edge buffer portion and the outer insulating spacer, and a main body layer in contact with each of the buffer layer and the local buffer pattern.
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公开(公告)号：US20220336214A1
公开(公告)日：2022-10-20
申请号：US17853990
申请日：2022-06-30
发明人： GYEOM KIM , Dongwoo Kim , Jihye Yi , JINBUM KIM , Sangmoon Lee , Seunghun Lee
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8234 , H01L29/66 , H01L29/08 , H01L29/165 , H01L29/417 , H01L23/485 , H01L29/78 , H01L29/786 , H01L29/423 , H01L29/06 , H01L29/775
摘要： A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.
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