公开(公告)号：US20240087884A1

公开(公告)日：2024-03-14

申请号：US18513297

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： GYEOM KIM ,  Dongwoo Kim ,  Jihye Yi ,  JINBUM KIM ,  Sangmoon Lee ,  Seunghun Lee

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/485 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L21/02293 ,  H01L21/28518 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823481 ,  H01L23/485 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.

公开(公告)号：US11869765B2

公开(公告)日：2024-01-09

申请号：US17853990

申请日：2022-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeom Kim ,  Dongwoo Kim ,  Jihye Yi ,  Jinbum Kim ,  Sangmoon Lee ,  Seunghun Lee

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/485 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786 ,  H01L23/532 ,  B82Y10/00 ,  H01L29/10 ,  H01L29/161 ,  H01L21/28

CPC classification number: H01L21/02293 ,  H01L21/28518 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823481 ,  H01L23/485 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/6656 ,  H01L29/66439 ,  H01L29/66553 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.

公开(公告)号：US11195917B2

公开(公告)日：2021-12-07

申请号：US16743627

申请日：2020-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye Yi ,  Unki Kim ,  Dongchan Suh

IPC: H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device is described that includes a substrate, an active region protruding from the substrate and extending in a first direction, a plurality of channel layers disposed on the active region and spaced apart from each other in a direction perpendicular to an upper surface of the substrate, an isolation film disposed between a lowermost channel layer of the plurality of channel layers and the active region, a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction, and a source/drain region disposed on at least one side of the gate electrode and connected to each of the plurality of channel layers. The isolation film is disposed on a level higher than a bottom surface of the source/drain region.

公开(公告)号：US20240194768A1

公开(公告)日：2024-06-13

申请号：US18533262

申请日：2023-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gilhwan Son ,  Taegon Kim ,  Sihyung Lee ,  Jihye Yi

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/20 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/2003 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: A method of manufacturing an integrated circuit device includes forming a preliminary channel stack, which includes sacrificial layers and channel layers, on a substrate, forming a preliminary channel pattern and a fin-type active region by removing a portion of the preliminary channel stack and a portion of the substrate to define a buried trench, forming a sacrificial buried layer in the buried trench, forming a source/drain region on the fin-type active region, forming, on the sacrificial buried layer, a power via electrically connected to the source/drain region, removing a portion of the substrate to expose a bottom surface of the sacrificial buried layer, removing the sacrificial buried layer and forming, in the buried trench, a backside buried wiring layer connected to the power via, and forming a backside wiring structure electrically connected to the backside buried wiring layer.

公开(公告)号：US20210151319A1

公开(公告)日：2021-05-20

申请号：US17006799

申请日：2020-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeom Kim ,  Dongwoo Kim ,  Jihye Yi ,  JinBum Kim ,  Sangmoon Lee ,  Seunghun Lee

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.

公开(公告)号：US12249505B2

公开(公告)日：2025-03-11

申请号：US18513297

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeom Kim ,  Dongwoo Kim ,  Jihye Yi ,  Jinbum Kim ,  Sangmoon Lee ,  Seunghun Lee

IPC: H01L21/02 ,  B82Y10/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/532 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.

公开(公告)号：US11380541B2

公开(公告)日：2022-07-05

申请号：US17006799

申请日：2020-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeom Kim ,  Dongwoo Kim ,  Jihye Yi ,  JinBum Kim ,  Sangmoon Lee ,  Seunghun Lee

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/66 ,  H01L23/532 ,  H01L23/485 ,  H01L29/10 ,  H01L29/06 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L21/28

Abstract: A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.

公开(公告)号：US11183562B2

公开(公告)日：2021-11-23

申请号：US16750273

申请日：2020-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihye Yi ,  Moonseung Yang ,  Jungtaek Kim

IPC: H01L29/423 ,  H01L29/10 ,  H01L29/417 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/265

Abstract: A semiconductor device includes a substrate including an active region in a first direction, a plurality of channel layers on the active region and disposed in a direction perpendicular to an upper surface of the substrate, a gate electrode respectively surrounding the plurality of channel layers, and a source/drain structure respectively disposed on both sides of the gate electrode in the first direction and connected to each of the plurality of channel layers. The gate electrode extends in a second direction crossing the first direction. The gate electrode includes an overlapped portion in a region of the gate electrode on an uppermost channel layer of the plurality of channel layers. The overlapped portion of the gate electrode overlaps the source/drain structure in the first direction and has a side surface inclined toward the upper surface of the substrate.

公开(公告)号：US11862682B2

公开(公告)日：2024-01-02

申请号：US17511778

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihye Yi ,  Moonseung Yang ,  Jungtaek Kim

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/265

CPC classification number: H01L29/1037 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/26513 ,  H01L21/308 ,  H01L21/30604 ,  H01L21/31116 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate including an active region in a first direction, a plurality of channel layers on the active region and disposed in a direction perpendicular to an upper surface of the substrate, a gate electrode respectively surrounding the plurality of channel layers, and a source/drain structure respectively disposed on both sides of the gate electrode in the first direction and connected to each of the plurality of channel layers. The gate electrode extends in a second direction crossing the first direction. The gate electrode includes an overlapped portion in a region of the gate electrode on an uppermost channel layer of the plurality of channel layers. The overlapped portion of the gate electrode overlaps the source/drain structure in the first direction and has a side surface inclined toward the upper surface of the substrate.

公开(公告)号：US20220336214A1

公开(公告)日：2022-10-20

申请号：US17853990

申请日：2022-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： GYEOM KIM ,  Dongwoo Kim ,  Jihye Yi ,  JINBUM KIM ,  Sangmoon Lee ,  Seunghun Lee

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L23/485 ,  H01L29/78 ,  H01L29/786 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775

Abstract: A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.