公开(公告)号：US20200303413A1

公开(公告)日：2020-09-24

申请号：US16892384

申请日：2020-06-04

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seung Jun SHIN ,  Hyun Mog PARK ,  Joong Shik SHIN

IPC分类号： H01L27/11582 ,  H01L27/11575 ,  H01L27/11565 ,  H01L27/11526 ,  H01L27/11573 ,  H01L27/11556 ,  H01L21/3213 ,  H01L29/792 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/768 ,  H01L29/788 ,  H01L27/1157

摘要： A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions.

公开(公告)号：US20230268333A1

公开(公告)日：2023-08-24

申请号：US18140917

申请日：2023-04-28

申请人： Samsung Electronics Co., Ltd.

发明人： Hyun Mog PARK ,  Sang Youn JO

IPC分类号： H01L25/18 ,  H01L23/528 ,  H01L23/00 ,  H01L25/00 ,  H10B41/27 ,  H10B41/30 ,  H10B41/40 ,  H10B43/27 ,  H10B43/30 ,  H10B43/40

CPC分类号： H01L25/18 ,  H01L23/528 ,  H01L24/09 ,  H01L24/05 ,  H01L25/50 ,  H01L24/89 ,  H01L24/08 ,  H10B41/27 ,  H10B41/30 ,  H10B41/40 ,  H10B43/27 ,  H10B43/30 ,  H10B43/40 ,  H01L2224/80001 ,  H01L2224/0557 ,  H01L2224/08147 ,  H01L2224/0913

摘要： A semiconductor device includes a first substrate structure including a first substrate, gate electrodes stacked on the first substrate, and extended by different lengths to provide contact regions, cell contact plugs connected to the gate electrodes in the contact regions, and first bonding pads disposed on the cell contact plugs to be electrically connected to the cell contact plugs, respectively, and a second substrate structure, connected to the first substrate structure on the first substrate structure, and including a second substrate, circuit elements disposed on the second substrate, and a second bonding pad bonded to the first bonding pads, wherein, the contact regions include first regions having a first width and second regions, of which at least a portion overlaps the first bonding pads, and which have a second width greater than the first width, and the second width is greater than a width of the first bonding pad.

公开(公告)号：US20200176470A1

公开(公告)日：2020-06-04

申请号：US16780999

申请日：2020-02-04

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji Mo GU ,  Kyeong Jin PARK ,  Hyun Mog PARK ,  Byoung II LEE ,  Tak LEE ,  Jun Ho CHA

IPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11548 ,  H01L27/11524 ,  H01L27/11575

摘要： A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.

公开(公告)号：US20210249397A1

公开(公告)日：2021-08-12

申请号：US17245299

申请日：2021-04-30

申请人： Samsung Electronics Co., Ltd.

发明人： Kohji KANAMORI ,  Hyun Mog PARK ,  Yong Seok KIM ,  Kyung Hwan LEE ,  Jun Hee LIM ,  Jee Hoon HAN

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11582

摘要： A semiconductor device includes a first semiconductor structure including circuit devices and first bonding pads; and a second semiconductor structure connected to the first semiconductor structure, the second semiconductor structure including a base layer; a first memory cell structure including first gate electrodes and first channels penetrating through the first gate electrodes; a second memory cell structure including second gate electrodes and second channels penetrating through the second gate electrodes; bit lines between the first and the second memory cell structures, and electrically connected to the first and second channels in common; first and second conductive layers on the second surface of the base layer; a pad insulating layer having an opening exposing a portion of the second conductive layer; and second bonding pads disposed to correspond to the first bonding pads in a lower portion of the second memory cell structure.

公开(公告)号：US20210020781A1

公开(公告)日：2021-01-21

申请号：US16778114

申请日：2020-01-31

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min Hee CHO ,  Woo Bin SONG ,  Hyun Mog PARK ,  Min Woo SONG

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/04 ,  H01L29/417

摘要： A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.

公开(公告)号：US20200105735A1

公开(公告)日：2020-04-02

申请号：US16414083

申请日：2019-05-16

申请人： Samsung Electronics Co., Ltd.

发明人： Hyun Mog PARK ,  Sang Youn JO

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L25/00

摘要： A semiconductor device includes a first substrate structure including a first substrate, gate electrodes stacked on the first substrate, and extended by different lengths to provide contact regions, cell contact plugs connected to the gate electrodes in the contact regions, and first bonding pads disposed on the cell contact plugs to be electrically connected to the cell contact plugs, respectively, and a second substrate structure, connected to the first substrate structure on the first substrate structure, and including a second substrate, circuit elements disposed on the second substrate, and a second bonding pad bonded to the first bonding pads, wherein, the contact regions include first regions having a first width and second regions, of which at least a portion overlaps the first bonding pads, and which have a second width greater than the first width, and the second width is greater than a width of the first bonding pad.

公开(公告)号：US20240315030A1

公开(公告)日：2024-09-19

申请号：US18675030

申请日：2024-05-27

申请人： Samsung Electronics Co., Ltd.

发明人： Seung Jun SHIN ,  Hyun Mog PARK ,  Joong Shik SHIN

IPC分类号： H10B43/27 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B43/50

CPC分类号： H10B43/27 ,  H01L21/3213 ,  H01L21/76802 ,  H01L21/76877 ,  H01L29/41775 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/7889 ,  H01L29/7926 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B43/50

摘要： A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions.

公开(公告)号：US20210366928A1

公开(公告)日：2021-11-25

申请号：US17394499

申请日：2021-08-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seung Jun SHIN ,  Hyun Mog PARK ,  Joong Shik SHIN

IPC分类号： H01L27/11582 ,  H01L27/11575 ,  H01L27/11565 ,  H01L27/11526 ,  H01L27/11573 ,  H01L27/11556 ,  H01L21/3213 ,  H01L29/792 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/768 ,  H01L29/788 ,  H01L27/1157

摘要： A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions.

公开(公告)号：US20200381413A1

公开(公告)日：2020-12-03

申请号：US16994207

申请日：2020-08-14

申请人： Samsung Electronics Co., Ltd.

发明人： Hyun Mog PARK ,  Sang Youn JO

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L25/00 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L23/528

摘要： A semiconductor device includes a first substrate structure including a first substrate, gate electrodes stacked on the first substrate, and extended by different lengths to provide contact regions, cell contact plugs connected to the gate electrodes in the contact regions, and first bonding pads disposed on the cell contact plugs to be electrically connected to the cell contact plugs, respectively, and a second substrate structure, connected to the first substrate structure on the first substrate structure, and including a second substrate, circuit elements disposed on the second substrate, and a second bonding pad bonded to the first bonding pads, wherein, the contact regions include first regions having a first width and second regions, of which at least a portion overlaps the first bonding pads, and which have a second width greater than the first width, and the second width is greater than a width of the at least one first bonding pad.

公开(公告)号：US20220336672A1

公开(公告)日：2022-10-20

申请号：US17856202

申请日：2022-07-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min Hee CHO ,  Woo Bin SONG ,  Hyun Mog PARK ,  Min Woo SONG

IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L29/04 ,  H01L29/45

摘要： A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.