公开(公告)号：US11101243B2

公开(公告)日：2021-08-24

申请号：US16680657

申请日：2019-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho Park ,  Kyungsuk Oh ,  Hyunki Kim ,  Yongkwan Lee ,  Sangsoo Kim ,  Seungkon Mok ,  Junyoung Oh ,  Changyoung Yoo

IPC: H01L25/065 ,  H01L23/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor package including a circuit substrate including a plurality of interconnections; a first chip on the circuit substrate; a second chip stacked on the first chip; a plurality of first pads on the circuit substrate, the plurality of first pads overlapping the first chip; a plurality of bumps between the circuit substrate and the first chip; a plurality of second pads on an edge portion of a first side of the circuit substrate, the plurality of second pads electrically connected to the second chip through a conductive wire; an underfill that fills a space between the circuit substrate and the first chip; and a first dam on the circuit substrate, the first dam overlapping the first chip. The first dam includes a conductive material and overlaps at least one of the plurality of interconnections.

公开(公告)号：US11728142B2

公开(公告)日：2023-08-15

申请号：US16883392

申请日：2020-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Jaeho Kwak ,  Boeun Jang ,  Seokyeon Hwang ,  Yongseok Seo ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee ,  Jongho Lee ,  Daewook Kim ,  Wonpil Lee ,  Changkyu Choi

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  H01L21/673

CPC classification number: H01J37/32449 ,  C23C16/45504 ,  C23C16/45589 ,  H01J37/32633 ,  C23C16/4583 ,  C23C16/45502 ,  C23C16/45591 ,  H01J37/32357 ,  H01L21/67326

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

公开(公告)号：US11610845B2

公开(公告)日：2023-03-21

申请号：US17392705

申请日：2021-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho Park ,  Seung Hwan Kim ,  Jun Young Oh ,  Kyong Hwan Koh ,  Sangsoo Kim ,  Dong-Ju Jang

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/16 ,  H01L23/31

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

公开(公告)号：US11469156B2

公开(公告)日：2022-10-11

申请号：US17203084

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunki Kim ,  Sangsoo Kim ,  Seung Hwan Kim ,  Kyung Suk Oh ,  Yongkwan Lee ,  Jongho Lee

IPC: H01L23/433 ,  H01L25/065 ,  H01L23/00 ,  H01L23/367 ,  H01L25/07

Abstract: Disclosed is a semiconductor package comprising a package substrate, a first semiconductor chip on the package substrate and including a first region and a second region, a second semiconductor chip on the first region, a heat radiation spacer on the second region, a third semiconductor chip supported by the second semiconductor chip and the heat radiation spacer, and a molding layer covering the first to third semiconductor chips and the heat radiation spacer.

公开(公告)号：US11107769B2

公开(公告)日：2021-08-31

申请号：US16845890

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho Park ,  Seung Hwan Kim ,  Jun Young Oh ,  Kyong Hwan Koh ,  Sangsoo Kim ,  Dong-Ju Jang

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/16 ,  H01L25/065

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

公开(公告)号：US10978374B2

公开(公告)日：2021-04-13

申请号：US16285480

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunki Kim ,  Sangsoo Kim ,  Seung Hwan Kim ,  Kyung Suk Oh ,  Yongkwan Lee ,  Jongho Lee

IPC: H01L23/433 ,  H01L25/065 ,  H01L23/367 ,  H01L25/07 ,  H01L23/00

Abstract: Disclosed is a semiconductor package comprising a package substrate, a first semiconductor chip on the package substrate and including a first region and a second region, a second semiconductor chip on the first region, a heat radiation spacer on the second region, a third semiconductor chip supported by the second semiconductor chip and the heat radiation spacer, and a molding layer covering the first to third semiconductor chips and the heat radiation spacer.

公开(公告)号：US11742329B2

公开(公告)日：2023-08-29

申请号：US17399233

申请日：2021-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho Park ,  Kyungsuk Oh ,  Hyunki Kim ,  Yongkwan Lee ,  Sangsoo Kim ,  Seungkon Mok ,  Junyoung Oh ,  Changyoung Yoo

IPC: H01L23/16 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L25/0657 ,  H01L23/16 ,  H01L23/3185 ,  H01L23/49811 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/16227 ,  H01L2224/48227

Abstract: A semiconductor package including a circuit substrate including a plurality of interconnections; a first chip on the circuit substrate; a second chip stacked on the first chip; a plurality of first pads on the circuit substrate, the plurality of first pads overlapping the first chip; a plurality of bumps between the circuit substrate and the first chip; a plurality of second pads on an edge portion of a first side of the circuit substrate, the plurality of second pads electrically connected to the second chip through a conductive wire; an underfill that fills a space between the circuit substrate and the first chip; and a first dam on the circuit substrate, the first dam overlapping the first chip. The first dam includes a conductive material and overlaps at least one of the plurality of interconnections.

公开(公告)号：US20230131730A1

公开(公告)日：2023-04-27

申请号：US17862586

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junwoo Park ,  Sangsoo Kim ,  Seunghwan Kim ,  Jungjoo Kim ,  Yongkwan Lee

IPC: H01L25/16 ,  H01L23/498 ,  H01L23/64

Abstract: A semiconductor package includes a package substrate including a base substrate including a redistribution layer, pads disposed on first and second surfaces of the base substrate and connected to the redistribution layer, and a protective layer having a mounting region in which first openings respectively exposing first pads among the pads and a second opening exposing second pads among the pads and a portion of the second surface are disposed on the second surface; a semiconductor chip disposed on the mounting region and connected to the pads through the first openings and the second opening; and a sealing material covering a portion of the semiconductor chip and extending into the second opening. Four first openings among the first openings are respectively disposed adjacent to respective corners of the mounting region. The second opening is disposed to divide the four first openings into at least two groups.

公开(公告)号：US20210066046A1

公开(公告)日：2021-03-04

申请号：US16883392

申请日：2020-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Jaeho Kwak ,  Boeun Jang ,  Seokyeon Hwang ,  Yongseok Seo ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee ,  Jongho Lee ,  Daewook Kim ,  Wonpil Lee ,  Changkyu Choi

IPC: H01J37/32 ,  H01L21/67 ,  H01J37/34

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

公开(公告)号：US20210035913A1

公开(公告)日：2021-02-04

申请号：US16845890

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  Seung Hwan Kim ,  Jun Young Oh ,  Kyong Hwan Koh ,  Sangsoo Kim ,  Dong-Ju Jang

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/16 ,  H01L25/065

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.