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    GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    2.
    发明申请
    GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    基于氮化镓的半导体器件及其制造方法

    公开(公告)号：US20140167113A1

    公开(公告)日：2014-06-19

    申请号：US14186831

    申请日：2014-02-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-hoon LEE ,  Ki-se KIM

    IPC: H01L29/778

    CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/66143 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7786 ,  H01L29/872

    Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

    Abstract translation: 基于氮化镓（GaN）的半导体器件及其制造方法。 GaN基半导体器件可以包括散热基板（即，导热基板）; 布置在散热基板上并具有N面极性的GaN基多层; 以及配置在GaN基多层上的异质结构场效应晶体管（HFET）或肖特基电极。 HFET器件可以包括具有双凹槽结构的栅极。 虽然正在制造这种GaN基半导体器件，但是可以使用晶片接合工艺和激光剥离工艺。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190273159A1

    公开(公告)日：2019-09-05

    申请号：US16416725

    申请日：2019-05-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-hoon LEE ,  Gi-gwan Park ,  Tae-Young Kim

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/20 ,  H01L29/08 ,  H01L29/22 ,  H01L29/267 ,  H01L29/15 ,  H01L29/16

    Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

    NITRIDE-BASED SEMICONDUCTOR DEVICE
    6.
    发明申请
    NITRIDE-BASED SEMICONDUCTOR DEVICE 有权
    基于氮化物的半导体器件

    公开(公告)号：US20140252369A1

    公开(公告)日：2014-09-11

    申请号：US14160629

    申请日：2014-01-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-hoon LEE ,  Chan-ho PARK ,  Nam-young LEE

    IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205

    CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/41766 ,  H01L29/432 ,  H01L29/66462

    Abstract: A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

    Abstract translation: 一种氮化物系半导体器件，包括：衬底; 在该衬底上的含GaN层; GaN层上的含氮化物层; 在所述含氮化物层上的沟道阻挡层，所述沟道阻挡层包括氮化物基半导体; 沟道阻挡层上的栅极绝缘层; 以及栅极绝缘层上的栅电极。

    NITRIDE-BASED SEMICONDUCTOR DEVICES
    10.
    发明申请
    NITRIDE-BASED SEMICONDUCTOR DEVICES 审中-公开
    基于氮化物的半导体器件

    公开(公告)号：US20150021616A1

    公开(公告)日：2015-01-22

    申请号：US14259557

    申请日：2014-04-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-hoon LEE ,  Chan-ho PARK

    IPC: H01L29/778 ,  H01L29/20

    CPC classification number: H01L29/7787 ,  H01L29/045 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/66462

    Abstract: A nitride-based semiconductor device includes a barrier structure on a substrate, a nitride semiconductor layer on the barrier structure, and a source electrode, a drain electrode, and a gate electrode on the nitride semiconductor layer to be separated from each other. The barrier structure includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity on the first semiconductor layer, a third semiconductor layer having the first conductivity on the second semiconductor layer, and a fourth semiconductor layer having the second conductivity on the third semiconductor layer. A two-dimensional electrode gas (2DEG) channel is formed in the nitride semiconductor layer.

    Abstract translation: 氮化物类半导体器件包括衬底上的势垒结构，势垒结构上的氮化物半导体层，以及待分离的氮化物半导体层上的源电极，漏电极和栅电极。 阻挡结构包括具有第一导电性的第一半导体层，在第一半导体层上具有第二导电性的第二半导体层，在第二半导体层上具有第一导电性的第三半导体层，以及具有第二导电性的第四半导体层 在第三半导体层上。 在氮化物半导体层中形成二维电极气体（2DEG）通道。

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