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公开(公告)号：US20180308559A1
公开(公告)日：2018-10-25
申请号：US15842029
申请日：2017-12-14
发明人： Kwang-Ho Kim , Jihwan Yu , Seunghyun Cho
IPC分类号： G11C19/28 , G11C11/412 , G11C8/14 , H01L27/11578
CPC分类号： G11C19/28 , G11C5/025 , G11C8/14 , G11C11/412 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L27/11578 , H01L27/11582
摘要： Disclosed is a three-dimensional semiconductor device including a stack structure on a substrate and including electrodes that are vertically stacked on top of each other on a first region of a substrate, a vertical structure penetrating the stack structure and including a first semiconductor pattern, a data storage layer between the first semiconductor pattern and at least one of the electrodes, a transistor on a second region of the substrate, and a first contact coupled to the transistor. The first contact includes a first portion and a second portion on the first portion. Each of the first portion and the second portions has a diameter that increases with an increasing vertical distance from the substrate. A diameter of an upper part of the first portion is greater than a diameter of a lower part of the second portion.
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公开(公告)号：US20240196617A1
公开(公告)日：2024-06-13
申请号：US18511396
申请日：2023-11-16
发明人： Seungmin Lee , Jihwan Yu , Byungman Ahn , Bonghyun Choi
IPC分类号： H10B43/27 , G11C16/04 , H01L25/065 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/35 , H10B80/00
CPC分类号： H10B43/27 , G11C16/0483 , H01L25/0652 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/35 , H10B80/00 , H01L2225/06506
摘要： A semiconductor device includes a substrate comprising a chip region and a scribe lane region including a first key pattern region, a capping insulating layer disposed on the scribe lane region, a barrier metal layer covering the capping insulating layer and an inner wall of a via hole penetrating the capping insulating layer, a substrate layer disposed on the barrier metal layer and filling the via hole, an insulating plate and an upper base layer disposed on the substrate layer, a pattern insulating layer disposed on the capping insulating layer in the first key pattern region, a stacked structure disposed on the upper base layer and the pattern insulating layer, and first pattern structures overlapping the pattern insulating layer in a vertical direction and penetrating the stacked structure and the pattern insulating layer, wherein the pattern insulating layer extends through the barrier metal layer in the first key pattern region.
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公开(公告)号：US10748634B2
公开(公告)日：2020-08-18
申请号：US16417834
申请日：2019-05-21
发明人： Kwang-Ho Kim , Jihwan Yu , Seunghyun Cho
IPC分类号： G11C19/28 , H01L27/11578 , G11C8/14 , G11C11/412 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L27/11582 , G11C5/02
摘要： Disclosed is a three-dimensional semiconductor device including a stack structure on a substrate and including electrodes that are vertically stacked on top of each other on a first region of a substrate, a vertical structure penetrating the stack structure and including a first semiconductor pattern, a data storage layer between the first semiconductor pattern and at least one of the electrodes, a transistor on a second region of the substrate, and a first contact coupled to the transistor. The first contact includes a first portion and a second portion on the first portion. Each of the first portion and the second portions has a diameter that increases with an increasing vertical distance from the substrate. A diameter of an upper part of the first portion is greater than a diameter of a lower part of the second portion.
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公开(公告)号：US10354740B2
公开(公告)日：2019-07-16
申请号：US15842029
申请日：2017-12-14
发明人： Kwang-Ho Kim , Jihwan Yu , Seunghyun Cho
IPC分类号： G11C19/28 , H01L27/11578 , G11C8/14 , G11C11/412 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L27/11582 , G11C5/02
摘要： Disclosed is a three-dimensional semiconductor device including a stack structure on a substrate and including electrodes that are vertically stacked on top of each other on a first region of a substrate, a vertical structure penetrating the stack structure and including a first semiconductor pattern, a data storage layer between the first semiconductor pattern and at least one of the electrodes, a transistor on a second region of the substrate, and a first contact coupled to the transistor. The first contact includes a first portion and a second portion on the first portion. Each of the first portion and the second portions has a diameter that increases with an increasing vertical distance from the substrate. A diameter of an upper part of the first portion is greater than a diameter of a lower part of the second portion.
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