公开(公告)号：US10211210B2

公开(公告)日：2019-02-19

申请号：US15603668

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon Ma ,  Jun-Noh Lee ,  Dong-Hyun Im ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.

公开(公告)号：US12230498B2

公开(公告)日：2025-02-18

申请号：US17222195

申请日：2021-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dain Lee ,  Yoongoo Kang ,  Wonseok Yoo ,  Jinwon Ma ,  Kyungwook Park ,  Changwoo Seo ,  Suyoun Song

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

Abstract: A semiconductor device manufacturing method includes loading a semiconductor substrate into a chamber, the semiconductor substrate including a silicon oxide film, depositing a seed layer on the silicon oxide film by supplying a first silicon source material, supplying a purge gas on the seed layer, depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material layer and subsequently supplying the first silicon source material, and depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material.

公开(公告)号：US10748909B2

公开(公告)日：2020-08-18

申请号：US16711833

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwon Ma ,  Jun-Noh Lee ,  Dong-Hyun Im ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.

公开(公告)号：US11830567B2

公开(公告)日：2023-11-28

申请号：US17372697

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwon Ma ,  Chunhyung Chung ,  Jamin Koo ,  Kyuwan Kim ,  Daeyoung Moon ,  Wonseok Yoo

IPC: G11C5/06 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H10B12/00

CPC classification number: G11C5/063 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/532 ,  H10B12/0335 ,  H10B12/315 ,  H10B12/482

Abstract: An integrated circuit device includes; word lines extending in a first direction across a substrate and spaced apart in a second direction different from the first direction, bit lines extending on the word lines in the second direction and spaced apart in the first direction, a first contact plug arranged among the bitlines, contacting a first active region of the substrate, having a first width, and having a first dopant concentration, and a second contact plug arranged among the bitlines, contacting a second active region of the substrate, having a second width, and having a second dopant concentration less than the first dopant concentration.

公开(公告)号：US10535663B2

公开(公告)日：2020-01-14

申请号：US16245307

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon Ma ,  Jun-Noh Lee ,  Dong-Hyun Im ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.