公开(公告)号：US09368223B2

公开(公告)日：2016-06-14

申请号：US14754884

申请日：2015-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Hwan-Chung Kim ,  Kyoungkuy Park ,  Eunju Park ,  Bong-Gwan Seol

IPC: G06F11/07 ,  G11C16/26 ,  G06F12/02 ,  G06F11/10 ,  G11C11/56 ,  G11C16/10 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G06F11/1072 ,  G06F12/0246 ,  G06F12/0253 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.

公开(公告)号：US09672104B2

公开(公告)日：2017-06-06

申请号：US15156912

申请日：2016-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Hwan-Chung Kim ,  Kyoungkuy Park ,  Eunju Park ,  Bong-Gwan Seol

IPC: G06F11/10 ,  G06F12/02 ,  G11C11/56 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G06F11/1072 ,  G06F12/0246 ,  G06F12/0253 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.

公开(公告)号：US09183938B2

公开(公告)日：2015-11-10

申请号：US14684683

申请日：2015-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Hee Tak Shin ,  Jinwoo Jung ,  Sung Woo Jo

IPC: G11C11/34 ,  G11C16/16 ,  G11C16/04

CPC classification number: G11C16/16 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5641

Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.

公开(公告)号：US09147475B2

公开(公告)日：2015-09-29

申请号：US13945460

申请日：2013-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Heetak Shin ,  Jinwoo Jung ,  Wan-Soo Choi

IPC: G11C11/56 ,  G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/32 ,  G11C2211/5622 ,  G11C2211/5641

Abstract: A storage device is provided which includes a plurality of memory chips each nonvolatile memory cells divided into a first memory region and a second memory region; and a memory controller configured to buffer data provided from the exterior and to control the plurality of memory chips to perform a buffer-program operation and a main-program operation. The buffered data is stored at the first memory region at the buffer-program operation and data stored at the first memory region is written at the second memory region at the main-program operation. During a main-program operation of a first memory chip among the plurality of memory chips, the memory controller buffers data to be written at a second memory chip.

Abstract translation: 提供存储装置，其包括多个存储器芯片，每个非易失性存储器单元分成第一存储区域和第二存储器区域; 以及存储器控制器，被配置为缓冲从外部提供的数据并且控制所述多个存储器芯片以执行缓冲器程序操作和主程序操作。 缓冲数据以缓冲器程序操作存储在第一存储器区域，并且存储在第一存储器区域的数据被写入主程序操作的第二存储器区域。 在多个存储器芯片中的第一存储器芯片的主程序操作期间，存储器控制器缓冲要写入第二存储器芯片的数据。

公开(公告)号：US09696911B2

公开(公告)日：2017-07-04

申请号：US15062994

申请日：2016-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Ju Kim ,  Young Woo Jung ,  Jeonghoon Cho

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0688 ,  G06F12/0253 ,  G06F2212/7205 ,  G11C7/22 ,  G11C16/32 ,  G11C2207/2272

Abstract: A nonvolatile memory system includes a memory controller and a nonvolatile memory. A method of operating the nonvolatile memory system includes receiving a command that includes an urgency level from an external device, adjusting an operation time of an operation of the command based on the urgency level, completing the operation of the command within the adjusted operation time, and transmitting a completion response to the external device.

公开(公告)号：US09973603B2

公开(公告)日：2018-05-15

申请号：US15340302

申请日：2016-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Gon Han ,  Seo Yeon Park ,  Young Seok Park ,  Young Woo Jung ,  Won Geun Shim ,  Sung Chul Park ,  Jeong Gyu Jin ,  Ho Chul Hwang

IPC: H04M1/02 ,  G06F1/16

CPC classification number: H04M1/0268 ,  G06F1/1643 ,  G06F1/1652 ,  G06F1/1656 ,  G06F1/1673

Abstract: Disclosed is an electronic device includes a flexible display, a support structure that supports the flexible display and a housing, into which the flexible display and the support structure are inserted. When the support structure is inserted into the housing, the flexible display is inserted into the housing together with the support structure while being wound in a specific direction. When the support structure extends outside the housing, the flexible display is deployed so that the flexible display is substantially flat.

公开(公告)号：US09966407B2

公开(公告)日：2018-05-08

申请号：US14830805

申请日：2015-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Chan Kim ,  Jung Chak Ahn ,  Hyuk Soon Choi ,  Kyung Ho Lee ,  Jun Suk Lee ,  Young Woo Jung

IPC: H01L27/14 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/37452 ,  H04N5/37457

Abstract: A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.

公开(公告)号：US09007827B2

公开(公告)日：2015-04-14

申请号：US14062932

申请日：2013-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Woo Jung ,  Hee Tak Shin ,  Jinwoo Jung ,  Sung Woo Jo

IPC: G11C11/34 ,  G11C16/10

CPC classification number: G11C16/16 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5641

Abstract: A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block.

Abstract translation: 存储器系统包括非易失性存储器件和存储器控制器。 非易失性存储器件包括被配置为存储每个单元的m位数据的第一存储器块和被配置为存储每个单元n位数据的第二存储器块。 存储器控制器被配置为当对第二存储器块执行编程操作时，控制非易失性存储器件关闭在第二存储器块的第二存储器块中产生的打开字线。

公开(公告)号：US10128288B2

公开(公告)日：2018-11-13

申请号：US15229549

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Sun Oh ,  Jung Chak Ahn ,  Young Woo Jung

IPC: H01L27/146

Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.