公开(公告)号：US20220157393A1

公开(公告)日：2022-05-19

申请号：US17530586

申请日：2021-11-19

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Junyong PARK ,  Hyunggon KIM ,  Byungsoo Kim ,  Sungmin JOE

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/24 ,  G11C16/08 ,  G11C11/56 ,  G11C16/10 ,  H01L27/11582 ,  G06F3/06

Abstract: A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.

公开(公告)号：US20230072218A1

公开(公告)日：2023-03-09

申请号：US17736395

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minseok KIM ,  Junyong PARK ,  Doohyun KIM ,  Ilhan PARK

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  G11C29/10

Abstract: In a method of reducing reliability degradation of a nonvolatile memory device, the nonvolatile memory device in which initial data having an initial threshold voltage distribution is stored in a plurality of memory cells connected to a plurality of wordlines is provided. Before a first process causing reliability degradation is performed, a first write operation is performed such that first data having a first threshold voltage distribution is stored into memory cells connected to first wordlines. The first wordlines have a degree of reliability degradation less than a reference value. Before the first process is performed, a second write operation is performed such that second data having a second threshold voltage distribution is stored into memory cells connected to second wordlines. The second wordlines have a degree of reliability degradation greater than or equal to the reference value.

公开(公告)号：US20220020380A1

公开(公告)日：2022-01-20

申请号：US17492267

申请日：2021-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyong PARK ,  Jiyeon MA ,  Donghun SHIN ,  Youngah LEE ,  Daewung KIM ,  Sungdo SON ,  Dahye SHIM ,  Hyungmin YOOK

IPC: G10L17/06 ,  G10L17/22 ,  G06F3/0481

Abstract: An electronic device and a control method thereof are provided. The electronic apparatus includes a voice input unit, a display, a memory storing at least one instruction, and a processor configured to execute the at least one instruction. The processor is configured to: based on a voice of a user being input through the voice input unit, recognize the user who has uttered the voice by comparing the voice with a plurality of pre-registered voices; and control the display to display an indicator corresponding to the recognized user.

公开(公告)号：US20220157831A1

公开(公告)日：2022-05-19

申请号：US17378317

申请日：2021-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokcheon BAEK ,  Younghwan SON ,  Miram KWON ,  Junyong PARK ,  Jiho LEE

IPC: H01L27/1157 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/11565

Abstract: Provided is a three-dimensional semiconductor memory device including a first substrate that includes a cell array region and a connection region; first and second electrode layers that are sequentially stacked and spaced apart from each other on the first substrate, and an end portion of the first electrode layer and an end portion of the second electrode layer are offset from each other on the connection region; a first cell contact penetrating the second electrode layer and the first electrode layer such as to be connected to the second electrode layer on the connection region; and a first contact dielectric pattern between the first cell contact and the first electrode layer. The first cell contact includes columnar part that vertically extends from a top surface of the first substrate, and a connection part that laterally protrudes from the columnar part and contacts the second electrode layer.

公开(公告)号：US20240145016A1

公开(公告)日：2024-05-02

申请号：US18400297

申请日：2023-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyong PARK ,  Hyunggon KIM ,  Byungsoo KIM ,  Sungmin JOE

IPC: G11C16/34 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  H10B43/27

CPC classification number: G11C16/3459 ,  G06F3/0604 ,  G06F3/0655 ,  G06F3/0679 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  H10B43/27 ,  G11C2211/5621

Abstract: A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.

公开(公告)号：US20210280117A1

公开(公告)日：2021-09-09

申请号：US17258012

申请日：2019-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungjun HWANG ,  Donghun SHIN ,  Junyong PARK ,  Youngah LEE

IPC: G09G3/20

Abstract: A display apparatus and a method of controlling the same are provided. The display apparatus includes: a signal receiver configured to receive a video signal of content; a display; and a processor configured to obtain a video photographing a surrounding of the display apparatus, identify a first color representing the obtained video and at least one second color related to the first color, and allocate the identified first color or second color to at least some area of the content or display the allocated first color or second color on the display. Thereby, it is possible to display content in a color fitting a space well.

公开(公告)号：US20250056806A1

公开(公告)日：2025-02-13

申请号：US18610514

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhyoung KIM ,  Bumkyu KANG ,  Junyong PARK ,  Sukkang SUNG

IPC: H10B43/40 ,  H01L23/522 ,  H01L23/528 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

Abstract: A semiconductor device and a data storage system are provided. The semiconductor device includes a peripheral circuit structure; a stack structure vertically overlapping the peripheral circuit structure; and a separation structure penetrating through the stack structure. The stack structure includes a plurality of blocks spaced apart from each other by a first portion of the separation structure, each of the plurality of blocks includes insulating layers and conductive layers alternately stacked in a vertical direction, and the plurality of blocks include first blocks and a plurality of capacitor blocks disposed between first blocks adjacent to each other among the first blocks.