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    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM THE SAME 有权

    公开(公告)号：US20220406808A1

    公开(公告)日：2022-12-22

    申请号：US17724002

    申请日：2022-04-19

    申请人： Samsung Electronics Co., Ltd.

    发明人： Dongjin LEE ,  Junhee LIM ,  Hakseon KIM ,  Nakjin SON ,  Jeongeun KIM ,  Juseong MIN ,  Changheon LEE

    IPC分类号： H01L27/11573 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582

    摘要： A semiconductor device includes a lower level layer including a peripheral circuit; and an upper level layer provided on the lower level layer, the upper level layer including a vertically-extended memory cell string, wherein the lower level layer includes a first substrate; a device isolation layer defining a first active region of the first substrate; and a first gate structure including a first gate insulating pattern, a first conductive pattern, a first metal pattern, and a first capping pattern, which are sequentially stacked on the first active region, wherein the first conductive pattern comprises a doped semiconductor material, and the device isolation layer covers a first side surface of the first conductive pattern, and the first metal pattern includes a first body portion on the first conductive pattern.

    METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF
    8.
    发明申请
    METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF 有权

    公开(公告)号：US20220139714A1

    公开(公告)日：2022-05-05

    申请号：US17319503

    申请日：2021-05-13

    申请人： Samsung Electronics Co., Ltd.

    发明人： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

    IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01J37/32

    摘要： A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.