METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME
    1.
    发明申请
    METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME 有权
    处理基板的方法和执行该基板的装置

    公开(公告)号:US20150155178A1

    公开(公告)日:2015-06-04

    申请号:US14297024

    申请日:2014-06-05

    Abstract: In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.

    Abstract translation: 在处理衬底的方法中,可以从第一反应气体产生第一等离子体。 可以从第二反应气体产生第二等离子体。 第一等离子体和第二等离子体可以单独地施加到基底。 因此,至少两个远程等离子体源中的每一个可以在不同的工艺配方下产生至少两个等离子体,其可以被优化用于处理衬底。 结果,使用最佳等离子体处理的衬底可以具有期望的形状。

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