公开(公告)号：US20170282502A1

公开(公告)日：2017-10-05

申请号：US15628891

申请日：2017-06-21

Applicant: Samsung Electronics Co., Ltd. ,  Sungkyunkwan University Foundation for Corporate Collaboration

Inventor： Hyeon-jin SHIN ,  Sang-Woo KIM ,  Jin yeong LEE

IPC: B32B15/04 ,  C23C16/34 ,  H01L21/02 ,  C23C28/00

CPC classification number: B32B15/04 ,  B32B2457/00 ,  C23C16/342 ,  C23C28/34 ,  H01L21/02458 ,  Y10T428/31678

Abstract: A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.

公开(公告)号：US20210043452A1

公开(公告)日：2021-02-11

申请号：US16851675

申请日：2020-04-17

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Changhyun KIM ,  Sang-Woo KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Ahrum SOHN ,  Jaehwan JUNG

IPC: H01L21/02

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.

公开(公告)号：US20140321524A1

公开(公告)日：2014-10-30

申请号：US14263232

申请日：2014-04-28

Applicant: Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Chan-Hong KIM ,  Soo-Yong CHOI ,  Sang-Woo KIM ,  Hyung-Ju NAM ,  Moon-Chang CHOI

IPC: H04L27/26 ,  H04L25/03

CPC classification number: H04L27/2647 ,  H04L5/0007 ,  H04L5/0023 ,  H04L25/03159 ,  H04L25/03821 ,  H04L27/2626 ,  H04L27/264 ,  H04L2025/03414

Abstract: A method and an apparatus for transmitting and receiving data in a filter bank based multicarrier communication system are provided. The method includes receiving a plurality of data blocks and performing an Inverse Fast Fourier Transform (IFFT) operation on the plurality of data blocks, multiplying the plurality of data blocks on which IFFT has been performed and time axis filter coefficients, and transmitting a result obtained by adding the plurality of multiplied data blocks as a multi carrier signal.

Abstract translation: 提供了一种用于在基于滤波器组的多载波通信系统中发送和接收数据的方法和装置。 该方法包括接收多个数据块并对多个数据块执行快速傅立叶逆变换（IFFT）操作，将已经执行了IFFT的多个数据块与时间轴滤波器系数相乘，并且发送获得的结果 通过将多个相乘的数据块相加作为多载波信号。

公开(公告)号：US20190189824A1

公开(公告)日：2019-06-20

申请号：US16217445

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Youngjun PARK ,  Sang-Woo KIM ,  Hong Joon YOON ,  Youngin SON ,  Ahrum SOHN

IPC: H01L31/054 ,  H01L31/18 ,  H01L31/0352 ,  G02B6/42 ,  H02S40/22

CPC classification number: H01L31/0543 ,  G02B6/4295 ,  H01L31/035218 ,  H01L31/18 ,  H02S40/22

Abstract: A solar cell module having a light guide member and a method of fabricating the same are provided. The solar cell module includes a light guide member including a light receiving surface for receiving external light and a side surface formed to be inclined to or perpendicular to the light receiving surface, and at least one solar cell mounted on the side surface, the at least one solar cell being configured to receive the external light through the light guide member and perform photoelectric transformation on the received external light. The light guide member includes a plurality of air pores, and the light guide member guides the received external light to a direction of the side surface. The solar cell module may be configured in various manners according to embodiments.

公开(公告)号：US20140287244A1

公开(公告)日：2014-09-25

申请号：US14063529

申请日：2013-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin SHIN ,  Sang-Woo KIM ,  Jin yeong LEE

IPC: B32B15/04 ,  H01B13/00

CPC classification number: B32B15/04 ,  B32B2457/00 ,  C23C16/342 ,  C23C28/34 ,  H01L21/02458 ,  Y10T428/31678

Abstract: A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.

Abstract translation: 基板组件包括直接接合到基板的表面的第一六边形氮化硼片和在第一六边形氮化硼片上的金属层。

公开(公告)号：US20130140526A1

公开(公告)日：2013-06-06

申请号：US13705700

申请日：2012-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Woo KIM ,  Hyeon-Jin SHIN ,  Jae-young CHOI

IPC: C01B21/064 ,  H01L29/16

CPC classification number: C01B21/064 ,  C01B21/0646 ,  C01P2004/24 ,  C01P2004/60 ,  C30B25/165 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/518 ,  H01L29/778

Abstract: A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp2 B—N covalent bond, a Van der Waals bond between boron-nitrogen layers, a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.

Abstract translation: 具有：具有sp2BN共价键的二维平面结构，硼氮层之间的范德华力键，约2纳米或更小的均方根表面粗糙度和约1纳米的长度的六方氮化硼片 毫米以上。