公开(公告)号：US20130201437A1

公开(公告)日：2013-08-08

申请号：US13719339

申请日：2012-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Seung-nam CHA ,  Sun-il KIM

IPC: G02B3/14

CPC classification number: G02B3/14 ,  B82B1/008 ,  B82Y15/00 ,  G02F1/29 ,  G02F2001/294 ,  Y10S977/742 ,  Y10S977/762

Abstract: A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.

Abstract translation: 一种变焦透镜，包括第一液晶层; 第一电极部，设置在第一液晶层的下方，具有扁平形状; 第一非均匀电场发生器，与第一电极部分一起在第一液晶层中产生不均匀的电场，第一非均匀电场发生器包括具有扁平形状的第二电极部分。

公开(公告)号：US20130201436A1

公开(公告)日：2013-08-08

申请号：US13719299

申请日：2012-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Seung-nam CHA ,  Seung-wan LEE ,  Sun-il KIM

IPC: G02F1/1335

CPC classification number: G02F1/133526 ,  G02F1/29 ,  G02F2001/294

Abstract: A varifocal lens including a first liquid crystal layer; a second liquid crystal layer disposed below the first liquid crystal layer; a common electrode disposed between the first liquid crystal layer and the second liquid crystal layer; a first electrode disposed above the first liquid crystal layer and having a curved shape; and a second electrode disposed below the second liquid crystal layer and having a curved shape.

Abstract translation: 一种变焦透镜，包括第一液晶层; 设置在所述第一液晶层下方的第二液晶层; 设置在所述第一液晶层和所述第二液晶层之间的公共电极; 第一电极，其设置在第一液晶层的上方并具有弯曲的形状; 以及设置在第二液晶层下方并具有弯曲形状的第二电极。

公开(公告)号：US20160172193A1

公开(公告)日：2016-06-16

申请号：US15052250

申请日：2016-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jun PARK ,  Jung-inn SOHN ,  Seung-nam CHA ,  Ji-yeon KU

IPC: H01L21/02

CPC classification number: H01L21/02609 ,  B82Y10/00 ,  H01B1/08 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/22

Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

Abstract translation: 通过使用热化学气相沉积方法控制具有纤锌矿晶体结构的金属氧化物半导体的生长晶体面的方法包括通过使用源极使金属氧化物半导体在非极性方向上生长来控制生长晶面 包括降低金属氧化物半导体的极性面的表面能的热分解材料的材料。

公开(公告)号：US20160155930A1

公开(公告)日：2016-06-02

申请号：US15015948

申请日：2016-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-inn SOHN ,  Seung-nam CHA ,  Sung-min KIM ,  Sang-woo KIM ,  Ju-seok SEO

IPC: H01L41/45 ,  H02N11/00

CPC classification number: H01L41/45 ,  H01L41/1136 ,  H01L41/193 ,  H02N2/18 ,  H02N11/002 ,  Y10T29/42

Abstract: A nanogenerator with at least one nanostructure and method of manufacturing the same are provided. The method of manufacturing the nanogenerator includes forming at least one nanostructure including an organic piezoelectric material on a substrate.

Abstract translation: 提供具有至少一种纳米结构的纳米发生器及其制造方法。 制造纳米发生器的方法包括在衬底上形成包括有机压电材料的至少一个纳米结构。

公开(公告)号：US20130221806A1

公开(公告)日：2013-08-29

申请号：US13774039

申请日：2013-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-inn SOHN ,  Seung-nam CHA

IPC: H01L41/113 ,  H01L41/29 ,  H01L41/047

CPC classification number: H01L41/113 ,  H01L41/047 ,  H01L41/0478 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H02N2/18

Abstract: A nano-piezoelectric generator includes a first electrode and a second electrode, at least one nano-piezoelectric unit, formed of a semiconductor piezoelectric material having a nano-structure, disposed between the first and the second electrodes, and an interlayer, formed of an insulating material, disposed between the first electrode and the at least one nano-piezoelectric unit.

Abstract translation: 纳米压电发电机包括第一电极和第二电极，至少一个纳米压电单元，由具有纳米结构的半导体压电材料形成，设置在第一和第二电极之间;以及夹层，由 绝缘材料，设置在第一电极和至少一个纳米压电单元之间。

公开(公告)号：US20160178811A1

公开(公告)日：2016-06-23

申请号：US15057538

申请日：2016-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Seung-nam CHA ,  Sun-il KIM

IPC: G02B3/14

CPC classification number: G02B3/14 ,  B82B1/008 ,  B82Y15/00 ,  G02F1/29 ,  G02F2001/294 ,  Y10S977/742 ,  Y10S977/762

Abstract: A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.

公开(公告)号：US20140159181A1

公开(公告)日：2014-06-12

申请号：US14102965

申请日：2013-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-min KIM ,  Dae-Jun KANG ,  Seung-nam CHA ,  Muhammad Imran SHAKIR ,  Young-jun PARK

IPC: B01J35/00 ,  H01L31/028 ,  B01J23/52

CPC classification number: B01J35/004 ,  B01J21/18 ,  B01J23/52 ,  B01J35/0013 ,  B01J35/0033 ,  B01J35/006 ,  H01L31/028 ,  Y02E10/547

Abstract: A graphene-nanoparticle structure includes a substrate, a graphene layer disposed on the substrate and a nanoparticle layer disposed on the graphene layer. The graphene-nanoparticle structure may be formed by alternately laminating the graphene layer and the nanoparticle layer and may play the role of a multifunctional film capable of realizing various functions according to the number of laminated layers and the selected material of the nanoparticles.

Abstract translation: 石墨烯纳米颗粒结构包括基底，设置在基底上的石墨烯层和设置在石墨烯层上的纳米颗粒层。 可以通过交替层叠石墨烯层和纳米颗粒层来形成石墨烯纳米颗粒结构，并且可以起到根据叠层数和纳米颗粒的选定材料实现各种功能的多功能膜的作用。

公开(公告)号：US20140138672A1

公开(公告)日：2014-05-22

申请号：US13859250

申请日：2013-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jun PARK ,  Jung-inn SOHN ,  Seung-nam CHA ,  Ji-yeon KU

IPC: H01L21/02 ,  H01L29/22

CPC classification number: H01L21/02609 ,  B82Y10/00 ,  H01B1/08 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/22

Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

Abstract translation: 通过使用热化学气相沉积方法控制具有纤锌矿晶体结构的金属氧化物半导体的生长晶体面的方法包括通过使用源极使金属氧化物半导体在非极性方向上生长来控制生长晶面 包括降低金属氧化物半导体的极性面的表面能的热分解材料的材料。

公开(公告)号：US20130139865A1

公开(公告)日：2013-06-06

申请号：US13689055

申请日：2012-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Seung-nam CHA ,  Jae-hyun LEE ,  Dong-mok WHANG

IPC: H01L35/28 ,  B32B3/26

CPC classification number: H01L35/28 ,  B32B3/263 ,  B32B3/30 ,  B82Y30/00 ,  H01L35/22 ,  H01L35/32 ,  Y10T428/24521 ,  Y10T428/24612

Abstract: A composite structure of graphene and polymer and a method of manufacturing the complex. The composite structure of graphene and polymer includes: at least one polymer structure having a three-dimensional shape; and a graphene layer formed on the at least one polymer structure.

Abstract translation: 石墨烯和聚合物的复合结构和复合体的制造方法。 石墨烯和聚合物的复合结构包括：至少一种具有三维形状的聚合物结构; 以及在所述至少一种聚合物结构上形成的石墨烯层。