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公开(公告)号：US20130201436A1
公开(公告)日：2013-08-08
申请号：US13719299
申请日：2012-12-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byoung-lyong CHOI , Eun-kyung LEE , Seung-nam CHA , Seung-wan LEE , Sun-il KIM
IPC: G02F1/1335
CPC classification number: G02F1/133526 , G02F1/29 , G02F2001/294
Abstract: A varifocal lens including a first liquid crystal layer; a second liquid crystal layer disposed below the first liquid crystal layer; a common electrode disposed between the first liquid crystal layer and the second liquid crystal layer; a first electrode disposed above the first liquid crystal layer and having a curved shape; and a second electrode disposed below the second liquid crystal layer and having a curved shape.
Abstract translation: 一种变焦透镜，包括第一液晶层; 设置在所述第一液晶层下方的第二液晶层; 设置在所述第一液晶层和所述第二液晶层之间的公共电极; 第一电极，其设置在第一液晶层的上方并具有弯曲的形状; 以及设置在第二液晶层下方并具有弯曲形状的第二电极。
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2.发明申请METHOD OF MANUFACTURING QUANTUM DOT DEVICE, QUANTUM DOT DEVICE MANUFACTURED BY USING THE METHOD, AND METHOD OF MEASURING ELECTRON MOBILITY OF QUANTUM DOT DEVICE 审中-公开制造量子装置的方法，使用该方法制造的量子装置以及测量量子装置的电子移动性的方法公开(公告)号：US20150311379A1
公开(公告)日：2015-10-29
申请号：US14735756
申请日：2015-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae-young CHUNG , Kyung-sang CHO , Tae-ho KIM , Byoung-lyong CHOI
IPC: H01L33/00
CPC classification number: H01L33/005 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01L29/0665 , H01L31/035218 , H01L33/06 , H01L33/44 , H01L33/502 , H01L2933/0041
Abstract: A method of manufacturing a quantum dot (QD) device includes: forming a first QD solution obtained by dispersing a plurality of QDs in a mixture of a solvent and an anti-solvent; and forming a first QD layer on a substrate structure by applying the first QD solution onto the substrate structure and naturally evaporating the first QD solution.
Abstract translation: 制造量子点（QD）装置的方法包括：形成通过将多个QD分散在溶剂和反溶剂的混合物中获得的第一QD溶液; 以及通过将第一QD溶液施加到衬底结构上并自然地蒸发第一QD溶液，在衬底结构上形成第一QD层。
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3.发明申请WIRE STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHOD OF MANUFACTURING THE WIRE STRUCTURE 有权具有该结构的导线结构和半导体器件以及制造线结构的方法公开(公告)号：US20150061161A1
公开(公告)日：2015-03-05
申请号：US14467597
申请日：2014-08-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eun-kyung LEE , Byoung-lyong CHOI , Won-Jae JOO , Byung-Sung KIM , Jae-Hyun LEE , Jong-Woon LEE , Dong-Mok WHANG
CPC classification number: H01L24/45 , H01B1/04 , H01L24/43 , H01L2224/43 , H01L2224/45015 , H01L2224/45186 , H01L2224/45193 , H01L2224/45663 , H01L2224/45693 , H01L2924/12041 , H01L2924/12043 , H01L2924/00 , H01L2924/01006 , H01L2924/00014
Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.
Abstract translation: 根据示例性实施例，线结构包括第一线，其包括第一线芯和围绕第一线芯的第一碳壳，以及沿着纵向方向从第一线延伸的第二线。 第一线芯具有线形。 第一个碳壳含有碳。
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4.发明申请METHOD OF MANUFACTURING QUANTUM DOT DEVICE, QUANTUM DOT DEVICE MANUFACTURED BY USING THE METHOD, AND METHOD OF MEASURING ELECTRON MOBILITY OF QUANTUM DOT DEVICE 审中-公开制造量子装置的方法，使用该方法制造的量子装置以及测量量子装置的电子移动性的方法公开(公告)号：US20140054541A1
公开(公告)日：2014-02-27
申请号：US13858136
申请日：2013-04-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae-young CHUNG , Kyung-sang CHO , Tae-ho KIM , Byoung-lyong CHOI
CPC classification number: H01L33/005 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01L29/0665 , H01L31/035218 , H01L33/06 , H01L33/44 , H01L33/502 , H01L2933/0041
Abstract: A method of manufacturing a quantum dot (QD) device includes: forming a first QD solution obtained by dispersing a plurality of QDs in a mixture of a solvent and an anti-solvent; and forming a first QD layer on a substrate structure by applying the first QD solution onto the substrate structure and naturally evaporating the first QD solution.
Abstract translation: 制造量子点（QD）装置的方法包括：形成通过将多个QD分散在溶剂和反溶剂的混合物中获得的第一QD溶液; 以及通过将第一QD溶液施加到衬底结构上并自然地蒸发第一QD溶液，在衬底结构上形成第一QD层。
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公开(公告)号：US20180093892A1
公开(公告)日：2018-04-05
申请号：US15819576
申请日：2017-11-21
Inventor： Kyung-sang CHO , Sang-wook KIM , Tae-ho KIM , Dong-hyeok CHOI , Byoung-lyong CHOI
CPC classification number: C01B17/20 , B82Y30/00 , B82Y40/00 , C01B19/002 , C01B19/007 , C01G1/12 , C01G11/02 , C01P2002/86 , C01P2004/64 , C01P2004/84 , C01P2006/90
Abstract: Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle
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Patent Agency Ranking
公开(公告)号：US20130134361A1
公开(公告)日：2013-05-30
申请号：US13681955
申请日：2012-11-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun-kyung LEE , Byoung-lyong CHOI , Jae-hyun LEE , Dong-mok WHANG
IPC: H01B1/04
CPC classification number: C01B32/186 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01B1/04 , Y10S977/734 , Y10S977/773
Abstract: A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.
Abstract translation: 石墨烯点结构及其制造方法。 石墨烯点结构包括：包括半导体材料的芯; 以及形成在芯的表面上的石墨烯壳。 石墨烯点结构可形成网络。
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公开(公告)号：US20160178811A1
公开(公告)日：2016-06-23
申请号：US15057538
申请日：2016-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byoung-lyong CHOI , Eun-kyung LEE , Seung-nam CHA , Sun-il KIM
IPC: G02B3/14
CPC classification number: G02B3/14 , B82B1/008 , B82Y15/00 , G02F1/29 , G02F2001/294 , Y10S977/742 , Y10S977/762
Abstract: A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.
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公开(公告)号：US20160052788A1
公开(公告)日：2016-02-25
申请号：US14929842
申请日：2015-11-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun-kyung LEE , Byoung-lyong CHOI , Jae-hyun LEE , Dong-mok WHANG
IPC: C01B31/04
CPC classification number: C01B32/186 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01B1/04 , Y10S977/734 , Y10S977/773
Abstract: A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.
Abstract translation: 石墨烯点结构及其制造方法。 石墨烯点结构包括：包括半导体材料的芯; 以及形成在芯的表面上的石墨烯壳。 石墨烯点结构可形成网络。
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公开(公告)号：US20140054599A1
公开(公告)日：2014-02-27
申请号：US13937729
申请日：2013-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jun-hee CHOI , Byoung-lyong CHOI , Tae-ho KIM
IPC: H01L31/0304 , H01L33/00 , H01L31/18 , H01L33/32
CPC classification number: H01L31/03044 , B82Y20/00 , H01L25/0753 , H01L31/035218 , H01L31/035236 , H01L31/03529 , H01L31/047 , H01L31/1848 , H01L31/1856 , H01L31/1892 , H01L33/0075 , H01L33/0079 , H01L33/24 , H01L33/32 , H01L33/56 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , H01L2924/00
Abstract: A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.
Abstract translation: 提供了柔性半导体器件和制造柔性半导体器件的方法。 柔性半导体器件可以包括至少部分地嵌入柔性材料层中的至少一个垂直半导体元件。 柔性半导体器件还可以包括形成在柔性材料层的第一表面上的第一电极和形成在柔性材料层的第二表面上的第二电极。 制造柔性半导体器件的方法可以包括通过使用下层和缓冲层之间的差异来弱化或降低底层和缓冲层之间的粘合力来将其中嵌入至少一个垂直半导体元件的柔性材料层从衬底分离 底层和缓冲层的热膨胀系数。
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10.发明申请COMPOSITE STRUCTURE OF GRAPHENE AND POLYMER AND METHOD OF MANUFACTURING THE SAME 有权石墨和聚合物的复合结构及其制造方法公开(公告)号：US20130139865A1
公开(公告)日：2013-06-06
申请号：US13689055
申请日：2012-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eun-kyung LEE , Byoung-lyong CHOI , Seung-nam CHA , Jae-hyun LEE , Dong-mok WHANG
CPC classification number: H01L35/28 , B32B3/263 , B32B3/30 , B82Y30/00 , H01L35/22 , H01L35/32 , Y10T428/24521 , Y10T428/24612
Abstract: A composite structure of graphene and polymer and a method of manufacturing the complex. The composite structure of graphene and polymer includes: at least one polymer structure having a three-dimensional shape; and a graphene layer formed on the at least one polymer structure.
Abstract translation: 石墨烯和聚合物的复合结构和复合体的制造方法。 石墨烯和聚合物的复合结构包括：至少一种具有三维形状的聚合物结构; 以及在所述至少一种聚合物结构上形成的石墨烯层。
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