公开(公告)号：US20140141616A1

公开(公告)日：2014-05-22

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: H01L21/321 ,  H01L21/02

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20130183824A1

公开(公告)日：2013-07-18

申请号：US13733506

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungho KWON ,  Kuntack LEE ,  Yongsun KO ,  Hongjin KIM ,  Sangwon BAE ,  Sigyung AHN ,  Jun-Youl YANG ,  Sol HAN ,  Bo yun KIM ,  Myung-Ki HONG

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/02074 ,  H01L21/76861

Abstract: A method of fabricating a semiconductor device includes forming a first layer including a first metal, forming a second layer including a second metal, the second layer being adjacent to the first layer, polishing top surfaces of the first and second layers, and cleaning the first and second layers using a cleaning solution. The cleaning solution may include an etching solution etching the first and second layers and an inhibitor suppressing the second layer from being over etched.

Abstract translation: 制造半导体器件的方法包括形成包括第一金属的第一层，形成包括第二金属的第二层，第二层邻近第一层，抛光第一层和第二层的顶表面，以及清洁第一层 和使用清洁溶液的第二层。 清洁溶液可以包括蚀刻溶液，蚀刻第一和第二层以及抑制第二层的抑制剂被过蚀刻。

公开(公告)号：US20210098261A1

公开(公告)日：2021-04-01

申请号：US17121233

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung KIM ,  Tae-Hong KIM ,  Jung-Min OH ,  YUNGJUN KIM ,  INGI KIM ,  BOUN YOON ,  HYOSAN LEE ,  Sol HAN

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/67 ,  B24B37/20 ,  B24B53/017

Abstract: A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.

公开(公告)号：US20190091833A1

公开(公告)日：2019-03-28

申请号：US15957012

申请日：2018-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sol HAN ,  Yung Jun KIM ,  Ho Young KIM ,  Doo Sik MOON ,  Sung Oh PARK ,  Young Seok JANG ,  Sun Gyu PARK ,  Kyu Min OH ,  Joo Han LEE

IPC: B24B53/017 ,  B24B37/005 ,  H01L21/306

Abstract: A chemical mechanical polishing method includes providing a pad conditioner, such that the pad conditioner includes a base and a plurality of tips protruding from a surface of the base, adjusting a surface roughness of an upper surface of each tip of the plurality of tips, and adjusting a polishing rate of chemical mechanical polishing using the adjusted surface roughness of the upper surfaces of the plurality of tips.

公开(公告)号：US20180315613A1

公开(公告)日：2018-11-01

申请号：US16020585

申请日：2018-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung KIM ,  Tae-Hong KIM ,  Jung-Min OH ,  YUNGJUN KIM ,  INGI KIM ,  BOUN YOON ,  HYOSAN LEE ,  Sol HAN

IPC: H01L21/306 ,  H01L21/67 ,  B24B37/20 ,  H01L21/02 ,  B24B53/017

CPC classification number: H01L21/30625 ,  B24B37/20 ,  B24B53/017 ,  H01L21/02057 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67219

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

公开(公告)号：US20170301553A1

公开(公告)日：2017-10-19

申请号：US15428963

申请日：2017-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung KIM ,  Tae-Hong KIM ,  Jung-Min OH ,  YUNGJUN KIM ,  INGI KIM ,  BOUN YOON ,  HYOSAN LEE ,  Sol HAN

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/02 ,  B24B53/017 ,  B24B37/20

CPC classification number: H01L21/30625 ,  B24B37/20 ,  B24B53/017 ,  H01L21/02057 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67219

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

公开(公告)号：US20160032185A1

公开(公告)日：2016-02-04

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: C09K13/06 ,  C23F1/26

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。