公开(公告)号：US10177096B2

公开(公告)日：2019-01-08

申请号：US15622708

申请日：2017-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Gug Min ,  Sungil Cho ,  Jaehoon Choi ,  Shi-kyung Kim

IPC: H01L29/93 ,  H01L23/552 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00

Abstract: Semiconductor packages and a methods for manufacturing a semiconductor package are provided. The method includes providing a package including a substrate, a semiconductor chip provided on the substrate, and a molding layer provided on the substrate and covering the semiconductor chip, the substrate including a ground pattern exposed at one surface of the substrate; and applying a solution including metal particles and a conductive carbon material onto the molding layer to form a shielding layer covering the molding layer. The shielding layer includes the metal particles and the conductive carbon material connected to at least one of the metal particles. The shielding layer extends onto the one surface of the substrate and is electrically connected to the ground pattern.

公开(公告)号：US10991597B2

公开(公告)日：2021-04-27

申请号：US16657708

申请日：2019-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Hak Lee ,  Jaeyong Park ,  Jun-su Lim ,  Sungil Cho

IPC: H01L21/463 ,  H01L21/683 ,  H01L21/56 ,  H01L21/48 ,  H01L21/52 ,  H01L23/48 ,  H01L25/065 ,  H01L23/538 ,  H01L25/00

Abstract: A method of fabricating a semiconductor device is provided in which an adhesive layer is disposed on a first surface of a first semiconductor substrate. A carrier substrate is provided on the first surface of the first semiconductor substrate, and the carrier substrate is separated from a surface of the adhesive layer while the adhesive layer is still attached to the first surface of the first semiconductor substrate.

公开(公告)号：US20190109095A1

公开(公告)日：2019-04-11

申请号：US16195293

申请日：2018-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Gug Min ,  Sungil Cho ,  Jaehoon Choi ,  Shi-kyung Kim

IPC: H01L23/552 ,  H01L23/29 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

Abstract: Semiconductor packages and a methods for manufacturing a semiconductor package are provided. The method includes providing a package including a substrate, a semiconductor chip provided on the substrate, and a molding layer provided on the substrate and covering the semiconductor chip, the substrate including a ground pattern exposed at one surface of the substrate; and applying a solution including metal particles and a conductive carbon material onto the molding layer to form a shielding layer covering the molding layer. The shielding layer includes the metal particles and the conductive carbon material connected to at least one of the metal particles. The shielding layer extends onto the one surface of the substrate and is electrically connected to the ground pattern.

公开(公告)号：US12014905B2

公开(公告)日：2024-06-18

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyun Kim ,  Tae-Sun Shin ,  Deokjin Kwon ,  Donghyeon Na ,  Seungbo Shim ,  Sungyong Lim ,  Minjoon Kim ,  Jin Young Bang ,  Bongju Lee ,  Jinseok Lee ,  Sungil Cho ,  Chungho Cho

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01L21/26 ,  H01L21/6831 ,  H01J2237/327

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

公开(公告)号：US09620364B2

公开(公告)日：2017-04-11

申请号：US14715631

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Sil Hong ,  Sungil Cho

IPC: H01L21/033 ,  H01L21/31 ,  H01L21/311 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L21/0332 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0334 ,  H01L21/31 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/10852 ,  H01L28/90

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a molding layer and a supporter layer on a semiconductor substrate, forming a multiple mask layer including a first mask layer and a second mask layer formed on the first mask layer, on the supporter layer. The first mask layer is formed of a material having an etch selectivity with respect to the molding layer and the second mask layer is formed of a material having an etch selectivity with respect to the supporter layer. The method includes forming a first mask pattern and a second mask pattern formed on the first mask pattern by patterning the multiple mask layer, etching the supporter layer by performing a first etching process using the second mask pattern as an etch mask, etching the molding layer, and forming a hole by performing a second etching process using the first mask pattern as an etch mask.

公开(公告)号：US20200303209A1

公开(公告)日：2020-09-24

申请号：US16657708

申请日：2019-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Hak Lee ,  Jaeyong Park ,  Jun-Su Lim ,  Sungil Cho

IPC: H01L21/463 ,  H01L21/683 ,  H01L21/52 ,  H01L21/48 ,  H01L21/56

Abstract: A method of fabricating a semiconductor device is provided in which an adhesive layer is disposed on a first surface of a first semiconductor substrate. A carrier substrate is provided on the first surface of the first semiconductor substrate, and the carrier substrate is separated from a surface of the adhesive layer while the adhesive layer is still attached to the first surface of the first semiconductor substrate.

公开(公告)号：US10475661B2

公开(公告)日：2019-11-12

申请号：US16021100

申请日：2018-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngsik Seo ,  Sungil Cho

IPC: H01L21/308 ,  H01L27/108 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66 ,  H01L21/311

Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure. The method includes forming a lower sacrificial layer, a lower supporter layer, an upper sacrificial layer, and an upper supporter layer which are sequentially stacked on the substrate structure. The method includes forming a mask pattern on the upper supporter layer; forming an upper supporter pattern by etching the upper supporter layer using the mask pattern as an etch mask. The method includes forming a recess region penetrating the upper supporter pattern, the upper sacrificial layer, the lower supporter layer, and the lower sacrificial layer, and removing the lower sacrificial layer and the upper sacrificial layer. The mask pattern is removed during the process of forming the upper supporter pattern. And, when the process of forming the recess region ends, the upper supporter pattern remains.

公开(公告)号：US10410974B2

公开(公告)日：2019-09-10

申请号：US16195293

申请日：2018-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Gug Min ,  Sungil Cho ,  Jaehoon Choi ,  Shi-kyung Kim

IPC: H01L23/552 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00

Abstract: Semiconductor packages and a methods for manufacturing a semiconductor package are provided. The method includes providing a package including a substrate, a semiconductor chip provided on the substrate, and a molding layer provided on the substrate and covering the semiconductor chip, the substrate including a ground pattern exposed at one surface of the substrate; and applying a solution including metal particles and a conductive carbon material onto the molding layer to form a shielding layer covering the molding layer. The shielding layer includes the metal particles and the conductive carbon material connected to at least one of the metal particles. The shielding layer extends onto the one surface of the substrate and is electrically connected to the ground pattern.