公开(公告)号：US11737271B2

公开(公告)日：2023-08-22

申请号：US16993570

申请日：2020-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Hong Kwon ,  Chan Ho Kim ,  Kyung Hwa Yun ,  Dae Seok Byeon ,  Chi Weon Yoon

IPC: H10B43/27 ,  G11C16/32 ,  G11C16/08 ,  G11C16/24 ,  G11C5/14 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B43/27 ,  G11C5/145 ,  G11C16/08 ,  G11C16/24 ,  G11C16/32 ,  H10B43/35 ,  H10B43/40

Abstract: In order to permit dense integration of a high number of stacked word lines in the semiconductor memory device, a charge pump is included in the semiconductor memory device. The charge pump makes use of a capacitor. The capacitor is implemented with respect to the dense integration. Some components are placed under the stacked word lines, and some are not under the stacked word lines. The capacity of the capacitor not under the stacked word lines is provided in part by a parallel structure.

公开(公告)号：US10290343B2

公开(公告)日：2019-05-14

申请号：US15608219

申请日：2017-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： ChaeHoon Kim ,  Kyoman Kang ,  Tae-Hong Kwon ,  Taeyun Lee ,  Jin-Young Chun

IPC: G11C11/4091 ,  G11C5/14 ,  G11C7/06 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32 ,  G11C7/12 ,  G11C13/00 ,  G11C16/04 ,  G11C27/02

Abstract: Methods of operating a memory device include at least partially charging a sensing node within a page buffer of the memory device to a first precharge voltage, by sampling a trip voltage of a sensing latch within the page buffer. Thereafter, a voltage of the sensing node is boosted from the first precharge voltage to a higher second precharge voltage. Then, a voltage of the sensing node that reflects a value of data stored in a memory cell of the memory device is developed at the sensing node. The developed voltage is then transferred to the sensing latch so that data stored by the sensing latch reflects the value of data stored in the memory cell.

公开(公告)号：US20180096718A1

公开(公告)日：2018-04-05

申请号：US15608219

申请日：2017-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： ChaeHoon KIM ,  Kyoman Kang ,  Tae-Hong Kwon ,  Taeyun Lee ,  Jin-Young Chun

IPC: G11C11/4091 ,  G11C7/12

CPC classification number: G11C11/4091 ,  G11C5/145 ,  G11C7/06 ,  G11C7/12 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32 ,  G11C27/02 ,  G11C2013/0042 ,  G11C2013/0054

Abstract: Methods of operating a memory device include at least partially charging a sensing node within a page buffer of the memory device to a first precharge voltage, by sampling a trip voltage of a sensing latch within the page buffer. Thereafter, a voltage of the sensing node is boosted from the first precharge voltage to a higher second precharge voltage. Then, a voltage of the sensing node that reflects a value of data stored in a memory cell of the memory device is developed at the sensing node. The developed voltage is then transferred to the sensing latch so that data stored by the sensing latch reflects the value of data stored in the memory cell.

公开(公告)号：US09570176B2

公开(公告)日：2017-02-14

申请号：US14668544

申请日：2015-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Taeck Jung ,  Tae-Hong Kwon ,  Tae-Min Park ,  Ohsuk Kwon

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/26 ,  G11C7/04 ,  G11C8/12 ,  G11C16/08

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C8/12 ,  G11C16/08 ,  G11C16/26

Abstract: An operating method of a nonvolatile memory device includes determining whether a memory block is a selected block, and when the memory block is not the selected block, determining whether the memory block shares a block word line with the selected block. The method further includes applying an unselected block word line voltage to word lines of the memory block when the memory block shares the block word line with the selected block, and floating the word lines of the memory block when the memory block does not share the block word line with the selected block.

Abstract translation: 非易失性存储器件的操作方法包括确定存储器块是否是所选择的块，以及当存储器块不是所选择的块时，确定存储器块是否与所选择的块共享块字线。 该方法还包括当存储器块与所选择的块共享块字线时将未选择的块字线电压施加到存储器块的字线，并且当存储器块不共享块时浮置存储器块的字线 字线与所选块。