公开(公告)号：US20220093206A1

公开(公告)日：2022-03-24

申请号：US17319493

申请日：2021-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hyun JOO ,  Tae-Min PARK ,  Hyungsoo KIM ,  Jaewoo IM ,  Won-Taeck JUNG

IPC: G11C29/50 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/34 ,  H01L27/11556 ,  H01L27/11582 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: Disclosed is a nonvolatile memory device, which includes a memory cell array including cell strings, a row decoder connected with a ground selection transistor of each of the cell strings through a ground selection line, connected with memory cells of each of the cell strings through word lines, and connected with a string selection transistor of each of the cell strings through a string selection line, and a page buffer connected with the cell strings through bit lines. In a first period of a check operation, the page buffer applies a first bias voltage to the bit lines, and the row decoder applies a turn-off voltage to the ground selection line, a turn-on voltage to the string selection line, and a first check voltage to the word lines. In a second period of the check operation, the page buffer senses first changes of voltages of the bit lines.

公开(公告)号：US20240331785A1

公开(公告)日：2024-10-03

申请号：US18739530

申请日：2024-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min KANG ,  Dongku KANG ,  Su Chang JEON ,  Won-Taeck JUNG

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/10 ,  G11C16/28 ,  G11C16/30

CPC classification number: G11C16/3481 ,  G11C16/08 ,  G11C16/10 ,  G11C16/28 ,  G11C16/30

Abstract: A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device incudes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

公开(公告)号：US20220020438A1

公开(公告)日：2022-01-20

申请号：US17195824

申请日：2021-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Ho SEO ,  Jung Ho LEE ,  Dae Sik HAM ,  Gi Baek KIM ,  Sang Yong YOON ,  Won-Taeck JUNG

IPC: G11C16/30 ,  G11C16/10 ,  G11C16/26 ,  G11C16/04 ,  G11C16/08

Abstract: A non-volatile memory device including: a first string including a first string select transistor, a first memory cell and a first ground select transistor, a second string including a second string select transistor, a second memory cell and a second ground select transistor, and a controller to apply a pass voltage to a first string select line from a first time, apply a first read voltage to a first word line during a first read section from the first time to a second time, apply a first ground select line voltage to a first ground select line from the first time, apply a ground voltage to a second string select line, apply the first ground select line voltage to a second ground select line during a first control section, and apply a first common source line voltage to a common source line during the first control section.

公开(公告)号：US20150043283A1

公开(公告)日：2015-02-12

申请号：US14523850

申请日：2014-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： DongHun KWAK ,  Sang-Won PARK ,  Won-Taeck JUNG

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/34 ,  G11C16/08

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

Abstract: Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.

Abstract translation: 公开了一种程序方法和非易失性存储装置。 该方法包括接收要在存储器单元中编程的程序数据; 读取存储单元以判断擦除状态和至少一个程序状态; 执行使用多个状态读取电压读取所述至少一个程序状态的状态读取操作; 以及根据状态读取操作的结果，使用具有不同电平的多个验证电压对存储器单元中的程序数据进行编程。 还公开了使用基于可能影响阈值电压偏移的因素而选择的多个验证电压的方法或者在编程之后表示存储器单元的数据的其他特性的方法。