公开(公告)号：US10236185B2

公开(公告)日：2019-03-19

申请号：US15686578

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Kyoung-sil Park ,  Yun-seok Choi ,  Boo-deuk Kim ,  Ye-hwan Kim

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/762 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/108 ,  B05D1/00 ,  B05D3/02

Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

公开(公告)号：US10047248B2

公开(公告)日：2018-08-14

申请号：US15293816

申请日：2016-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ye-hwan Kim ,  Un-gyu Paik ,  Ji-hoon Seo

IPC: C09G1/02 ,  B24B37/04

Abstract: A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NO3 functional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.

公开(公告)号：US20180151362A1

公开(公告)日：2018-05-31

申请号：US15686578

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool KANG ,  Kyoung-sil Park ,  Yun-seok Choi ,  Boo-deuk Kim ,  Ye-hwan Kim

IPC: H01L21/033 ,  H01L21/762

CPC classification number: H01L21/3081 ,  B05D1/005 ,  B05D3/0254 ,  B05D3/0272 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10891

Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.