Abstract:
Electrostatic chucks, plasma processing apparatuses, and methods of fabricating semiconductor devices using the same are provided. The electrostatic chuck includes a chuck base, an upper plate provided on the chuck base, and an inner plate provided between the chuck base and the upper plate. A first diameter of the inner plate is less than a second diameter of the upper plate.
Abstract:
A plasma processing apparatus includes a process chamber in which a substrate processing process is performed; an electrostatic chuck having a microcavity; a lower electrode disposed to be in contact with a lower surface of the electrostatic chuck; a high-frequency power supply applying high-frequency power to the lower electrode; a conductive supporter disposed to be spaced apart from a lower portion of the lower electrode and grounded thereto; and a discharge suppressor located between the lower electrode and the conductive supporter, having a gas supply flow path forming a portion of a gas supply line, and molded by three dimensional printing, wherein the gas supply flow path has a space portion having a length of 5 mm or less in a direction of an electric field formed by the high-frequency power and connecting upper and lower surfaces of the discharge suppressor.
Abstract:
A substrate inspection apparatus includes a liquid crystal modulator configured to be provided on a substrate, a light source unit provided to be spaced apart from the liquid crystal modulator, a beam splitter provided between the liquid crystal modulator and the light source unit configured to reflect a beam of light from the light source to the liquid crystal modulator, and a measurement unit configured to sense the beam of light reflected by the substrate.
Abstract:
A substrate processing apparatus may include a chucking member configured to support a substrate, a base plate configured to support the chucking member, a bonding layer located between the chucking member and the base plate, the bonding layer configured to adhere the chucking member to the base plate, a coating layer on an outer side surface of the bonding layer, and a bonding protective member surrounding an outer side surface of the coating layer, wherein the coating layer conformally covers the outer side surface of the bonding layer.
Abstract:
A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.
Abstract:
An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.