ROBOT AND SUBSTRATE HANDLING APPARATUS INCLUDING THE SAME
    3.
    发明申请
    ROBOT AND SUBSTRATE HANDLING APPARATUS INCLUDING THE SAME 有权
    机器人和底板处理装置,包括它们

    公开(公告)号:US20150251323A1

    公开(公告)日:2015-09-10

    申请号:US14643702

    申请日:2015-03-10

    CPC classification number: B25J19/0091 B25J11/0095 B25J15/0014 H01L21/67766

    Abstract: The robot including a main body, an arm connected to the main body, a hand connected to the arm, the hand including a hand base and a finger, and a hand bracket unit between the hand base and the finger or between the hand base and the arm, may be provided. The hand bracket unit may include a vibration damping member provided between the hand base and the finger or between the hand base and the arm, thereby damping vibration of the hand base or the finger.

    Abstract translation: 该机器人包括主体,连接到主体的臂,连接到手臂的手,手包括手基座和手指,以及在手基座和手指之间或手基座和手指之间的手托架单元, 可以提供手臂。 手托架单元可以包括设置在手基座和手指之间或手基座和手臂之间的减震构件,从而阻止手基座或手指的振动。

    SUBSTRATE STAGE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240167162A1

    公开(公告)日:2024-05-23

    申请号:US18215916

    申请日:2023-06-29

    CPC classification number: C23C16/4586 C23C16/4581 C23C16/46

    Abstract: A substrate processing apparatus includes a chamber providing a space for performing a semiconductor process on a semiconductor substrate, and a substrate stage configured to support the semiconductor substrate. The substrate stage includes a platen having a seating surface to support the semiconductor substrate, the platen having a resistance heater and an RF electrode adjacent to the seating surface, a shaft under the platen, the shaft having a first through hole in a central region and a plurality of second through holes in a peripheral region surrounding the central region, an RF rod spaced apart from an inner wall of the first through hole, the RF rod electrically connected to the RF electrode, and a plurality of heater rods respectively within the plurality of second through holes and electrically connected to the resistance heater.

    SUBSTRATE PROCESSING APPARATUS
    6.
    发明公开

    公开(公告)号:US20230317418A1

    公开(公告)日:2023-10-05

    申请号:US18068778

    申请日:2022-12-20

    Abstract: A substrate processing apparatus includes a process chamber having an internal space; upper and lower electrode portions facing each other in the internal space; and a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion. The gas supply unit may include a gas supply source outside the process chamber and configured to provide a cooling gas, and a gas filter connected to the gas supply source and including one or more wall surfaces at least partially defining a gas flow path for the cooling gas. The gas filter may include a first and second regions formed of respective materials having different dielectric constants. The first and second regions may be configured so that the cooling gas flowing along the gas flow path flows upwardly concurrently with colliding with a wall surface of the gas flow path.

    SUBSTRATE PROCESSING APPARATUS INCLUDING PLURALITY OF ELECTRODES

    公开(公告)号:US20230100582A1

    公开(公告)日:2023-03-30

    申请号:US17713433

    申请日:2022-04-05

    Abstract: A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.

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