公开(公告)号：US20230402258A1

公开(公告)日：2023-12-14

申请号：US18136448

申请日：2023-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunhwan KIM ,  Dougyong SUNG ,  Namkyun KIM ,  Minsung KIM ,  Youngjin NOH

IPC: H01J37/32 ,  H01L21/683 ,  B33Y80/00

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J37/32568 ,  H01J37/32082 ,  H01L21/6833 ,  B33Y80/00 ,  H01J2237/2007 ,  H01J2237/032 ,  H01J2237/334 ,  H01J2237/2001

Abstract: A plasma processing apparatus includes a process chamber in which a substrate processing process is performed; an electrostatic chuck having a microcavity; a lower electrode disposed to be in contact with a lower surface of the electrostatic chuck; a high-frequency power supply applying high-frequency power to the lower electrode; a conductive supporter disposed to be spaced apart from a lower portion of the lower electrode and grounded thereto; and a discharge suppressor located between the lower electrode and the conductive supporter, having a gas supply flow path forming a portion of a gas supply line, and molded by three dimensional printing, wherein the gas supply flow path has a space portion having a length of 5 mm or less in a direction of an electric field formed by the high-frequency power and connecting upper and lower surfaces of the discharge suppressor.

公开(公告)号：US20230266892A1

公开(公告)日：2023-08-24

申请号：US18148289

申请日：2022-12-29

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： Jiwoong KIM ,  MOONKI JANG ,  Yunhwan KIM ,  Myeongwhan HYUN

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F3/0659 ,  G06F3/0673

Abstract: A memory device includes a row decoder that receives one or more normal addresses and one or more control addresses, and a memory cell array connected to the row decoder via a plurality of word lines. In a normal operation, in response to receiving the one or more normal addresses, any one word line among the plurality of word lines is enabled. In an initialization operation, in response to receiving the one or more normal addresses and the one or more control addresses, at least two word lines among the plurality of word lines are enabled. Data of memory cells of the memory cell array connected to the enabled at least two word lines is initialized.

公开(公告)号：US20230317418A1

公开(公告)日：2023-10-05

申请号：US18068778

申请日：2022-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin KO ,  Sangki NAM ,  Dougyong SUNG ,  Byeongsang KIM ,  Yunhwan KIM ,  Suyoung YOO ,  Namkyun KIM ,  Kuihyun YOON

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32568 ,  H01J2237/3343 ,  H01J2237/2001

Abstract: A substrate processing apparatus includes a process chamber having an internal space; upper and lower electrode portions facing each other in the internal space; and a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion. The gas supply unit may include a gas supply source outside the process chamber and configured to provide a cooling gas, and a gas filter connected to the gas supply source and including one or more wall surfaces at least partially defining a gas flow path for the cooling gas. The gas filter may include a first and second regions formed of respective materials having different dielectric constants. The first and second regions may be configured so that the cooling gas flowing along the gas flow path flows upwardly concurrently with colliding with a wall surface of the gas flow path.

公开(公告)号：US20230100582A1

公开(公告)日：2023-03-30

申请号：US17713433

申请日：2022-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunhwan KIM ,  Dougyong SUNG ,  Byeongsang KIM ,  Youngjin NOH ,  Namkyun KIM

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.

公开(公告)号：US20230010881A1

公开(公告)日：2023-01-12

申请号：US17591751

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeongsang KIM ,  Dougyong SUNG ,  Sungjin KIM ,  Yunhwan KIM ,  Inseok SEO ,  Seungbo SHIM ,  Naohiko OKUNISHI ,  Minyoung HUR

IPC: G01R27/16 ,  H01L21/683 ,  H01L21/67 ,  C23C16/52 ,  H01L21/66 ,  C23C16/455

Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.