公开(公告)号：US20230207294A1

公开(公告)日：2023-06-29

申请号：US17970163

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hadong JIN ,  Siyoung KOH ,  Namkyun KIM ,  Kyungmin LEE ,  Sungyong LIM ,  Sungyeol KIM ,  Seungbo SHIM

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/24564 ,  H01L21/6831

Abstract: Provided is a plasma control apparatus including a plasma electrode disposed in a plasma chamber and to which radio frequency (RF) power having a fundamental frequency configured to generate plasma is applied, an edge electrode disposed adjacent to the plasma electrode and corresponding to a plasma edge region, and a plasma control circuit electrically connected to the edge electrode, the plasma control circuit being configured to control an electrical boundary condition in a plasma edge boundary region of a first frequency component, a harmonic wave component generated by nonlinearity of the plasma and intermodulation distortion frequency components generated by a frequency component in the plasma chamber and each of the first frequency component and the harmonic wave component, wherein the plasma control circuit is configured to change the electrical boundary condition to control a standing wave in the plasma chamber.

公开(公告)号：US20250146917A1

公开(公告)日：2025-05-08

申请号：US19018240

申请日：2025-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonbum NAM ,  Namkyun KIM ,  Seungbo SHIM ,  Donghyeon NA ,  Naohiko OKUNISHI ,  Dongseok HAN ,  Minyoung HUR ,  Byeongsang KIM ,  Kuihyun YOON

IPC: G01N9/24 ,  H01Q1/40 ,  H01Q9/30

Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

公开(公告)号：US20240136155A1

公开(公告)日：2024-04-25

申请号：US18232123

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changho KIM ,  Hyeongmo KANG ,  Illsang KO ,  Dooyoung GWAK ,  Kyungsun KIM ,  Namkyun KIM ,  Yirop KIM ,  Jihwan KIM ,  Seungbo SHIM ,  Minyoung HUR

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334

Abstract: Provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (RF) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the RF power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the RF power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the RF power and the second voltage after the third time elapses, wherein the RF power is a sine wave, and the second voltage is a square wave of a periodic pulse form.

公开(公告)号：US20230402258A1

公开(公告)日：2023-12-14

申请号：US18136448

申请日：2023-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunhwan KIM ,  Dougyong SUNG ,  Namkyun KIM ,  Minsung KIM ,  Youngjin NOH

IPC: H01J37/32 ,  H01L21/683 ,  B33Y80/00

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J37/32568 ,  H01J37/32082 ,  H01L21/6833 ,  B33Y80/00 ,  H01J2237/2007 ,  H01J2237/032 ,  H01J2237/334 ,  H01J2237/2001

Abstract: A plasma processing apparatus includes a process chamber in which a substrate processing process is performed; an electrostatic chuck having a microcavity; a lower electrode disposed to be in contact with a lower surface of the electrostatic chuck; a high-frequency power supply applying high-frequency power to the lower electrode; a conductive supporter disposed to be spaced apart from a lower portion of the lower electrode and grounded thereto; and a discharge suppressor located between the lower electrode and the conductive supporter, having a gas supply flow path forming a portion of a gas supply line, and molded by three dimensional printing, wherein the gas supply flow path has a space portion having a length of 5 mm or less in a direction of an electric field formed by the high-frequency power and connecting upper and lower surfaces of the discharge suppressor.

公开(公告)号：US20240234094A9

公开(公告)日：2024-07-11

申请号：US18232123

申请日：2023-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changho KIM ,  Hyeongmo KANG ,  Illsang KO ,  Dooyoung GWAK ,  Kyungsun KIM ,  Namkyun KIM ,  Yirop KIM ,  Jihwan KIM ,  Seungbo SHIM ,  Minyoung HUR

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334

Abstract: Provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (RF) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the RF power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the RF power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the RF power and the second voltage after the third time elapses, wherein the RF power is a sine wave, and the second voltage is a square wave of a periodic pulse form.

公开(公告)号：US20230317418A1

公开(公告)日：2023-10-05

申请号：US18068778

申请日：2022-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin KO ,  Sangki NAM ,  Dougyong SUNG ,  Byeongsang KIM ,  Yunhwan KIM ,  Suyoung YOO ,  Namkyun KIM ,  Kuihyun YOON

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32568 ,  H01J2237/3343 ,  H01J2237/2001

Abstract: A substrate processing apparatus includes a process chamber having an internal space; upper and lower electrode portions facing each other in the internal space; and a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion. The gas supply unit may include a gas supply source outside the process chamber and configured to provide a cooling gas, and a gas filter connected to the gas supply source and including one or more wall surfaces at least partially defining a gas flow path for the cooling gas. The gas filter may include a first and second regions formed of respective materials having different dielectric constants. The first and second regions may be configured so that the cooling gas flowing along the gas flow path flows upwardly concurrently with colliding with a wall surface of the gas flow path.

公开(公告)号：US20230197423A1

公开(公告)日：2023-06-22

申请号：US17942368

申请日：2022-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong LIM ,  Chansoo KANG ,  Youngdo KIM ,  Namkyun KIM ,  Sungyeol KIM ,  Sangki NAM ,  Seungbo SHIM ,  Kyungmin LEE

IPC: H01J37/32 ,  G01J1/44

CPC classification number: H01J37/32935 ,  G01J1/44 ,  H01J37/32174 ,  G01J2001/446

Abstract: A diagnostic device for diagnosing distribution of a radical in a plasma processing chamber, the diagnostic device, may include a spectrometer receiving an optical signal through at least one optical channel connected to the plasma processing chamber, and performing spectral analysis on the optical signal in response to a synchronization signal corresponding to each of states of a multi-level pulse applied to the plasma processing chamber and a synchronizer generating the synchronization signal corresponding to each of the states of the multi-level pulse.

公开(公告)号：US20230100582A1

公开(公告)日：2023-03-30

申请号：US17713433

申请日：2022-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunhwan KIM ,  Dougyong SUNG ,  Byeongsang KIM ,  Youngjin NOH ,  Namkyun KIM

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.