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公开(公告)号：US10995269B2
公开(公告)日：2021-05-04
申请号：US15816699
申请日：2017-11-17
发明人： Jin-Woo Lee , Hoon Han , Keon-Young Kim , Jung-Hun Lim , Jin-Uk Lee , Jae-Wan Park
IPC分类号： C09K13/08 , H01L27/1157 , H01L21/311 , H01L27/11582 , C09K13/06
摘要： An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
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公开(公告)号：US09655079B2
公开(公告)日：2017-05-16
申请号：US14596197
申请日：2015-01-13
发明人： Sang-Soo Jeong , Jin-Uk Lee , Song-Yean Cho
IPC分类号： H04W68/00
CPC分类号： H04W68/005 , H04W8/22 , H04W36/0022 , H04W64/003 , H04W72/10
摘要： Provided is a method for paging a User Equipment (UE) in an idle state by a Mobility Management Entity (MME) in a wireless communication network in which a Packet Switched (PS) domain and a Circuit Switched (CS) domain coexist. The method includes receiving a CS page message for paging the UE in a CS domain; and upon receiving the CS page message, sending a PS page message for paging the UE in a PS domain, the PS page message including a priority indicator, to an Evolved Node B (ENB) where the UE is located.
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公开(公告)号：US20150201397A1
公开(公告)日：2015-07-16
申请号：US14596197
申请日：2015-01-13
发明人： Sang-Soo Jeong , Jin-Uk Lee , Song-Yean Cho
CPC分类号： H04W68/005 , H04W8/22 , H04W36/0022 , H04W64/003 , H04W72/10
摘要： Provided is a method for paging a User Equipment (UE) in an idle state by a Mobility Management Entity (MME) in a wireless communication network in which a Packet Switched (PS) domain and a Circuit Switched (CS) domain coexist. The method includes receiving a CS page message for paging the UE in a CS domain; and upon receiving the CS page message, sending a PS page message for paging the UE in a PS domain, the PS page message including a priority indicator, to an Evolved Node B (ENB) where the UE is located.
摘要翻译： 提供了一种在分组交换（PS）域和电路交换（CS）域共存的无线通信网络中由移动性管理实体（MME）在空闲状态下寻呼用户设备（UE）的方法。 该方法包括：在CS域中接收用于寻呼UE的CS寻呼消息; 并且在接收到CS页消息时，向PS所在的演进节点B（ENB）发送用于在PS域中寻呼UE的PS寻呼消息，PS页消息包括优先级指示符。
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4.发明申请公开(公告)号：US20180142151A1
公开(公告)日：2018-05-24
申请号：US15816699
申请日：2017-11-17
发明人： Jin-Woo Lee , Hoon Han , Keon-Young Kim , Jung-Hun Lim , Jin-Uk Lee , Jae-Wan Park
IPC分类号： C09K13/08 , H01L21/311 , C09K13/06
CPC分类号： C09K13/08 , C09K13/06 , H01L21/31111 , H01L27/1157 , H01L27/11582
摘要： An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
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5.发明申请METHODS OF FORMING CONDUCTIVE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME 有权形成导电图案的方法和使用该方法制造半导体器件的方法公开(公告)号：US20150200112A1
公开(公告)日：2015-07-16
申请号：US14492122
申请日：2014-09-22
发明人： Hoon Han , Byoung-Moon Yoon , Young-Taek Hong , Keon-Young Kim , Jun-Youl Yang , Young-Ok Kim , Tae-Heon Kim , Sun-Joong Song , Jung-Hun Lim , Jae-Wan Park , Jin-Uk Lee
IPC分类号： H01L21/3213 , H01L29/423 , C23F1/16 , H01L21/02
CPC分类号： H01L21/32133 , C09K13/04 , C23F1/26 , H01L21/32115 , H01L21/32134 , H01L27/11582 , H01L29/4236 , H01L29/4966 , H01L29/66666 , H01L29/7827
摘要： The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.
摘要翻译： 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。
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公开(公告)号：US10091761B2
公开(公告)日：2018-10-02
申请号：US15595776
申请日：2017-05-15
发明人： Sang-Soo Jeong , Jin-Uk Lee , Song-Yean Cho
摘要： Provided is a method for paging a User Equipment (UE) in an idle state by a Mobility Management Entity (MME) in a wireless communication network in which a Packet Switched (PS) domain and a Circuit Switched (CS) domain coexist. The method includes receiving a CS page message for paging the UE in a CS domain; and upon receiving the CS page message, sending a PS page message for paging the UE in a PS domain, the PS page message including a priority indicator, to an Evolved Node B (ENB) where the UE is located.
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公开(公告)号：US20170251451A1
公开(公告)日：2017-08-31
申请号：US15595776
申请日：2017-05-15
发明人： Sang-Soo Jeong , Jin-Uk Lee , Song-Yean Cho
CPC分类号： H04W68/005 , H04W8/22 , H04W36/0022 , H04W64/003 , H04W72/10
摘要： Provided is a method for paging a User Equipment (UE) in an idle state by a Mobility Management Entity (MME) in a wireless communication network in which a Packet Switched (PS) domain and a Circuit Switched (CS) domain coexist. The method includes receiving a CS page message for paging the UE in a CS domain; and upon receiving the CS page message, sending a PS page message for paging the UE in a PS domain, the PS page message including a priority indicator, to an Evolved Node B (ENB) where the UE is located.
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8.发明授权公开(公告)号：US09530670B2
公开(公告)日：2016-12-27
申请号：US14492122
申请日：2014-09-22
发明人： Hoon Han , Byoung-Moon Yoon , Young-Taek Hong , Keon-Young Kim , Jun-Youl Yang , Young-Ok Kim , Tae-Heon Kim , Sun-Joong Song , Jung-Hun Lim , Jae-Wan Park , Jin-Uk Lee
IPC分类号： H01L21/20 , H01L21/36 , H01L21/3213 , H01L29/423 , C09K13/04 , C23F1/26 , H01L21/321 , H01L27/115 , H01L29/49 , H01L29/66 , H01L29/78
CPC分类号： H01L21/32133 , C09K13/04 , C23F1/26 , H01L21/32115 , H01L21/32134 , H01L27/11582 , H01L29/4236 , H01L29/4966 , H01L29/66666 , H01L29/7827
摘要： The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.
摘要翻译： 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。
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