CYLINDER PUMP
    1.
    发明申请
    CYLINDER PUMP 有权
    气缸泵

    公开(公告)号:US20130006183A1

    公开(公告)日:2013-01-03

    申请号:US13543294

    申请日:2012-07-06

    IPC分类号: A61M5/145

    摘要: The present invention relates to a simple and small cylinder pump, which can stably supply a medical fluid regardless of the installed height of a liquid container or a blood bag. The cylinder pump includes an upper casing, and a lower casing coupled to the upper casing. An upper rotation member is rotatably inserted in the upper casing. A lower rotation member slidingly contacting the upper rotation member is rotatably inserted in the lower casing. An inner wall of the upper casing, a lower outer surface of the upper rotation member, an inner wall of the lower casing, and an upper outer surface of the rotation member constitute a cylinder having a single-tube shape. Plungers are installed on the upper rotation member and on the lower rotation member, respectively, and rotate in the cylinder, the ends of which are closed.

    摘要翻译: 本发明涉及一种简单且小型的气缸泵,其能够稳定地供应医用流体,而与液体容器或血袋的安装高度无关。 气缸泵包括上壳体和联接到上壳体的下壳体。 上旋转构件可旋转地插入上壳体。 滑动地接触上旋转构件的下旋转构件可旋转地插入下壳体中。 上壳体的内壁,上旋转构件的下外表面,下壳体的内壁和旋转构件的上外表面构成具有单管形状的气缸。 柱塞分别安装在上旋转构件和下旋转构件上,并且在气缸中旋转,其端部关闭。

    Cylinder pump
    2.
    发明授权
    Cylinder pump 有权
    气缸泵

    公开(公告)号:US08529512B2

    公开(公告)日:2013-09-10

    申请号:US13543294

    申请日:2012-07-06

    IPC分类号: A61M1/00

    摘要: The present invention relates to a simple and small cylinder pump, which can stably supply a medical fluid regardless of the installed height of a liquid container or a blood bag. The cylinder pump includes an upper casing, and a lower casing coupled to the upper casing. An upper rotation member is rotatably inserted in the upper casing. A lower rotation member slidingly contacting the upper rotation member is rotatably inserted in the lower casing. An inner wall of the upper casing, a lower outer surface of the upper rotation member, an inner wall of the lower casing, and an upper outer surface of the rotation member constitute a cylinder having a single-tube shape. Plungers are installed on the upper rotation member and on the lower rotation member, respectively, and rotate in the cylinder, the ends of which are closed.

    摘要翻译: 本发明涉及一种简单且小型的气缸泵,其能够稳定地供应医用流体,而与液体容器或血袋的安装高度无关。 气缸泵包括上壳体和联接到上壳体的下壳体。 上旋转构件可旋转地插入上壳体。 滑动地接触上旋转构件的下旋转构件可旋转地插入下壳体中。 上壳体的内壁,上旋转构件的下外表面,下壳体的内壁和旋转构件的上外表面构成具有单管形状的气缸。 柱塞分别安装在上旋转构件和下旋转构件上,并且在气缸中旋转,其端部关闭。

    Apparatus and method for improved wafer transport ambient
    4.
    发明申请
    Apparatus and method for improved wafer transport ambient 审中-公开
    改善晶片输送环境的装置和方法

    公开(公告)号:US20050111935A1

    公开(公告)日:2005-05-26

    申请号:US10857951

    申请日:2004-06-02

    摘要: An improved wafer transfer apparatus is provided that allows the ambient atmosphere within a modified front open unified pod (“FOUP”) while the FOUP is positioned on a loading stage provided on an equipment front end module (“EFEM”). In particular, the wafer transfer apparatus includes both an injection assembly and an exhaust assembly that will be engaged when the door of the FOUP is docked to a door holder provided on the EFEM. The injection assembly may include a mass flow controller (“MFC”) for controlling the injection of purge gas(es) into the container. Similarly, the exhaust assembly may include a MFC for controlling the removal of fluid from the container. While the door is docked to the door holder, inert or less reactive gases may be introduced into the container, thereby reducing the likelihood of oxidation or contamination of the wafers therein.

    摘要翻译: 提供了一种改进的晶片传送装置,其允许在FOUP位于设备前端模块(“EFEM”)上的加载台上时,在改进的前开合统一的盒(“FOUP”)内的环境大气。 特别地,晶片传送装置包括注射组件和排气组件,当FOUP的门对接到设置在EFEM上的门保持器时将被接合。 注射组件可以包括质量流量控制器(“MFC”),用于控制将吹扫气体注入到容器中。 类似地,排气组件可以包括用于控制从容器去除流体的MFC。 当门与门座对接时,可将惰性或较少反应性气体引入容器中,从而减少其中晶片氧化或污染的可能性。

    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME
    5.
    发明申请
    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME 有权
    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNISSION STRUCTURE WITH THE SAME

    公开(公告)号:US20090017626A1

    公开(公告)日:2009-01-15

    申请号:US12168952

    申请日:2008-07-08

    IPC分类号: H01L21/311 C09K13/08

    摘要: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

    摘要翻译: 半导体湿蚀刻剂包括去离子水,氟基化合物,氧化剂和无机盐。 基于蚀刻剂的总重量,氟系化合物的浓度为0.25〜10.0重量%,氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量%,无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量%。 无机盐包括铵离子(NH 4 +)和氯离子(Cl - )中的至少一种。

    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME
    6.
    发明申请
    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME 审中-公开
    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNISSION STRUCTURE WITH THE SAME

    公开(公告)号:US20120009792A1

    公开(公告)日:2012-01-12

    申请号:US13240059

    申请日:2011-09-22

    IPC分类号: H01L21/308 H01L21/306

    摘要: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

    摘要翻译: 半导体湿蚀刻剂包括去离子水,氟基化合物,氧化剂和无机盐。 基于蚀刻剂的总重量,氟系化合物的浓度为0.25〜10.0重量%,氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量%,无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量%。 无机盐包括铵离子(NH 4 +)和氯离子(Cl - )中的至少一种。

    Semiconductor wet etchant and method of forming interconnection structure using the same
    7.
    发明授权
    Semiconductor wet etchant and method of forming interconnection structure using the same 有权
    半导体湿式蚀刻剂和使用其形成互连结构的方法

    公开(公告)号:US08043974B2

    公开(公告)日:2011-10-25

    申请号:US12168952

    申请日:2008-07-08

    IPC分类号: H01L21/302

    摘要: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

    摘要翻译: 半导体湿蚀刻剂包括去离子水,氟基化合物,氧化剂和无机盐。 基于蚀刻剂的总重量,氟系化合物的浓度为0.25〜10.0重量%,氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量%,无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量%。 无机盐包括铵离子(NH 4 +)和氯离子(Cl - )中的至少一种。

    Heat treatment equipment
    9.
    发明授权
    Heat treatment equipment 有权
    热处理设备

    公开(公告)号:US07850449B2

    公开(公告)日:2010-12-14

    申请号:US11775640

    申请日:2007-07-10

    IPC分类号: F27B5/00 F27B5/10

    摘要: In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat treatment equipment also comprises a hollow pressure control member interposed between the process tube and the exhaust duct, the pressure control member being operatively connected to the process tube and the exhaust duct respectively, and including one or a number of openings. Negative pressure is avoided in the process tube during heat treatment processes so that unwanted gas and impurities cannot enter the process tube from outside.

    摘要翻译: 在一个实施例中,热处理设备包括处理管,连接到处理管的排气管道,以及在操作期间排出存在于处理管内的气体。 热处理设备还包括插入处理管和排气管之间的中空压力控制构件,压力控制构件分别可操作地连接到处理管和排气管,并且包括一个或多个开口。 在热处理过程中,在处理管中避免负压,使得不需要的气体和杂质不能从外部进入工艺管。

    Apparatus and method for processing wafers
    10.
    发明授权
    Apparatus and method for processing wafers 有权
    用于处理晶片的装置和方法

    公开(公告)号:US07398801B2

    公开(公告)日:2008-07-15

    申请号:US11292674

    申请日:2005-12-02

    IPC分类号: B65B1/20

    摘要: An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.

    摘要翻译: 公开了一种用于制造半导体器件的设备和方法。 根据本发明,用于将晶片从晶片储存容器转移到晶片加工设备的晶片转移装置包括设计成减少可进入晶片容器的污染物量的流动室。 晶片传送装置提供两个气体入口,用于允许两种气体流过传送装置的流动室。 这导致能够进入晶片容器的污染物量减少,这进而导致具有更可靠的性能特征以及高制造产量的装置的制造。