ORGANOSILANE POLYMERS, HARDMASK COMPOSITIONS INCLUDING THE SAME AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING ORGANOSILANE HARDMASK COMPOSITIONS
    5.
    发明申请
    ORGANOSILANE POLYMERS, HARDMASK COMPOSITIONS INCLUDING THE SAME AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING ORGANOSILANE HARDMASK COMPOSITIONS 审中-公开
    有机聚合物,包括它们的HARDMASK组合物和使用有机硅复合材料制备半导体器件的方法

    公开(公告)号:US20070212886A1

    公开(公告)日:2007-09-13

    申请号:US11610786

    申请日:2006-12-14

    IPC分类号: H01L21/461 H01L21/302

    摘要: Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula I Si(OR1)(OR2)(OR3)R4   (I) wherein R1, R2 and R3 may each independently be an alkyl group, and R4 may be —(CH2)nR5, wherein R5 may be an aryl or a substituted aryl, and n may be 0 or a positive integer; and (b) at least one compound of Formula II Si(OR6)(OR7)(OR8)R9   (II) wherein R6, R7 and R8 may each independently an alkyl group or an aryl group; and R9 may be an alkyl group.Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof.Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.

    摘要翻译: 本文提供的根据本发明的一些实施方案是通过有机硅烷化合物制备的有机硅烷聚合物,所述有机硅烷化合物包括(a)至少一种式I的化合物<?in-line-formula description =“In-line Formulas”end =“lead” (OR 1)2(OR 3)(OR 3)R 4(I)其中R 1,R 2和R 3 可以各自独立地为烷基,并且R 4可以是 - (CH 2)n R 5, 其中R 5可以是芳基或取代的芳基,n可以是0或正整数; 和(b)至少一种式II的化合物<?在线公式描述=“In-line Formula”end =“lead”→Si(OR 6) (OR 8)R 9(II)<?in-line-formula description =“In-line Formulas”end =“tail”? >其中R 6,R 7和R 8可各自独立地为烷基或芳基; R 9可以是烷基。 还提供了包含根据本发明实施方案的有机硅烷化合物或其水解产物的硬掩模组合物。 还提供了使用根据本发明的实施例的硬掩模组合的半导体器件的制造方法以及由其制造的半导体器件。