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    Operating method of nonvolatile memory and method of controlling nonvolatile memory
    1.
    发明授权
    Operating method of nonvolatile memory and method of controlling nonvolatile memory 有权
    非易失性存储器的操作方法和非易失性存储器的控制方法

    公开(公告)号：US09076683B2

    公开(公告)日：2015-07-07

    申请号：US13587955

    申请日：2012-08-17

    申请人： Sang-Wan Nam ,  Kang-Bin Lee ,  Junghoon Park

    发明人： Sang-Wan Nam ,  Kang-Bin Lee ,  Junghoon Park

    IPC分类号： G11C16/04 ,  H01L27/115 ,  G11C16/34

    CPC分类号： G11C16/26 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/16 ,  G11C16/34 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

    摘要： An operating method of a nonvolatile memory, which includes a plurality of cell strings, each cell string having a plurality of memory cells and a string selection transistor stacked on a substrate, includes detecting threshold voltages of the string selection transistors of the plurality of cell strings; adjusting voltages to be supplied to the string selection transistors according to the detected threshold voltages; and applying the adjusted voltages to the string selection transistors to select or unselect the plurality of cell strings during a programming operation.

    摘要翻译： 一种非易失性存储器的操作方法，包括多个单元串，具有多个存储单元的每个单元串和堆叠在基板上的串选择晶体管，包括检测多个单元串中的串选择晶体管的阈值电压 ; 根据检测到的阈值电压调整提供给串选择晶体管的电压; 以及将调整后的电压施加到串选择晶体管，以在编程操作期间选择或取消选择多个单元串。

    Nonvolatile memory device and method of programming the same
    2.
    发明授权
    Nonvolatile memory device and method of programming the same 有权
    非易失存储器件及其编程方法

    公开(公告)号：US09424931B2

    公开(公告)日：2016-08-23

    申请号：US14527461

    申请日：2014-10-29

    申请人： Yoon-Hee Choi ,  Sang-Wan Nam ,  Kang-Bin Lee

    发明人： Yoon-Hee Choi ,  Sang-Wan Nam ,  Kang-Bin Lee

    IPC分类号： G11C7/00 ,  G11C16/10 ,  G11C16/34 ,  G11C7/04 ,  G11C16/30

    CPC分类号： G11C16/10 ,  G11C7/04 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/30 ,  G11C16/3459

    摘要： In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

    摘要翻译： 在编程三维非易失性存储器件的方法中，程序循环至少执行一次，其中程序循环包括编程步骤，用于对存储器单元之间选择的存储单元进行编程，以及验证步骤，用于验证所选择的存储器 单元格是否通过程序传递。 在对所选存储单元的编程中，可以改变施加到共同连接到串的公共源极线的电压电平。 因此，在程序运行中，能够提高提升效率的同时，能够减小对公共源极线进行充放电所需要的功耗。