公开(公告)号：US06372598B1

公开(公告)日：2002-04-16

申请号：US09334588

申请日：1999-06-16

申请人： Sang-bum Kang ,  Yun-sook Chae ,  Sang-in Lee ,  Hyun-seok Lim ,  Mee-young Yoon

发明人： Sang-bum Kang ,  Yun-sook Chae ,  Sang-in Lee ,  Hyun-seok Lim ,  Mee-young Yoon

IPC分类号： H01L2120

摘要： A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.

公开(公告)号：US06391769B1

公开(公告)日：2002-05-21

申请号：US09525154

申请日：2000-03-14

申请人： Jong-myeong Lee ,  Hyun-seok Lim ,  Byung-hee Kim ,  Gil-heyun Choi ,  Sang-in Lee

发明人： Jong-myeong Lee ,  Hyun-seok Lim ,  Byung-hee Kim ,  Gil-heyun Choi ,  Sang-in Lee

IPC分类号： H01L214763

CPC分类号： H01L21/76855 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76888 ,  H01L2221/1089

摘要： A method for forming a metal interconnection filling a contact hole or a groove having a high aspect ratio, and a contact structure fabricated thereby. An interdielectric layer pattern, having a recessed region serving as a contact hole, a via hole or a groove, is formed on a semiconductor substrate. A barrier metal layer is formed on the entire surface of the resultant structure where the interdielectric layer pattern is formed. An anti-nucleation layer is selectively formed only on the non-recessed region of the barrier metal layer. The anti-nucleation layer is formed by forming a metal layer overlying the barrier metal layer in regions other than the recessed region, and then spontaneously oxidizing the metal layer in a vacuum. Also, the anti-nucleation layer may be formed by in-situ forming the barrier metal layer and the metal layer and then oxidizing the metal layer by an annealing process. Subsequently, a metal plug is selectively formed in the recessed region, surrounded by the barrier metal layer, thereby forming a metal interconnection for completely filling the contact hole or the groove having a high aspect ratio. A metal liner may be formed instead of the metal plug, followed by forming a metal layer filling the region surrounded by the metal liner, thereby forming a metal interconnection for completely filling the contact hole or groove having a high aspect ratio.

摘要翻译： 一种用于形成填充高纵横比的接触孔或槽的金属互连的方法，以及由此制造的接触结构。 在半导体衬底上形成具有用作接触孔的凹陷区域，通孔或沟槽的电介质层图案。 在形成介电层图案的所得结构的整个表面上形成阻挡金属层。 仅在阻挡金属层的非凹陷区域选择性地形成抗成核层。 通过在除了凹陷区域之外的区域中形成覆盖阻挡金属层的金属层，然后在真空中自发氧化金属层，形成抗成核层。 此外，抗成核层可以通过原位形成阻挡金属层和金属层，然后通过退火处理来氧化金属层而形成。 随后，在由阻挡金属层包围的凹陷区域中选择性地形成金属插塞，从而形成用于完全填充接触孔或具有高纵横比的沟槽的金属互连。 可以形成金属衬垫而不是金属插塞，随后形成填充由金属衬垫包围的区域的金属层，从而形成用于完全填充具有高纵横比的接触孔或槽的金属互连。

公开(公告)号：US06590251B2

公开(公告)日：2003-07-08

申请号：US09911313

申请日：2001-07-23

申请人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

发明人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

IPC分类号： H01L27108

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/7687 ,  H01L28/75

摘要： Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upper electrodes formed on the high dielectric films, and barrier metal layers positioned between conductive materials in the contact holes and the lower electrodes, the barrier metal layers including metal layers formed in A-B-N structures in which a plurality of atomic layers are stacked by alternatively depositing reactive metal (A), an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N). The composition ratios of the barrier metal layers are determined by the number of depositions of the atomic layers.

摘要翻译： 半导体膜包括在半导体衬底中包括接触孔的绝缘膜，包括形成在接触孔中的导电材料膜上的下电极的电容器，形成在下电极上的高电介质膜和形成在高电介质膜上的上电极，以及位于 接触孔和下电极中的导电材料，阻挡金属层包括通过交替沉积反应性金属（A）而堆叠多个原子层的ABN结构中形成的金属层，用于防止结晶的非晶态组合元件（B） 的反应性金属（A）和氮（N）。 阻挡金属层的组成比由原子层的沉积数确定。

公开(公告)号：US07141512B2

公开(公告)日：2006-11-28

申请号：US10999183

申请日：2004-11-30

申请人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

发明人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4405 ,  B08B7/00 ,  Y10S438/905

摘要： A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source gases into the chamber. Then the substrate is transferred out of the process chamber. At least one by-product of a reaction between the source gases and the metal oxide layer adheres to a surface inside the chamber, such as to a region or regions of the heater. Once the semiconductor substrate has been transferred outside the process chamber of the semiconductor fabrication apparatus, the by-product(s) is/are removed by evaporation. The by-product(s) can be evaporated using gas, such as one of the source gases, so that the process chamber can remain closed.

公开(公告)号：US20050126586A1

公开(公告)日：2005-06-16

申请号：US10999183

申请日：2004-11-30

申请人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

发明人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

IPC分类号： B08B5/00 ,  B08B7/00 ,  C03C23/00 ,  C23C16/44 ,  C23G1/00 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/44

CPC分类号： C23C16/4405 ,  B08B7/00 ,  Y10S438/905

摘要： A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source gases into the chamber. Then the substrate is transferred out of the process chamber. At least one by-product of a reaction between the source gases and the metal oxide layer adheres to a surface inside the chamber, such as to a region or regions of the heater. Once the semiconductor substrate has been transferred outside the process chamber of the semiconductor fabrication apparatus, the by-product(s) is/are removed by evaporation. The by-product(s) can be evaporated using gas, such as one of the source gases, so that the process chamber can remain closed.

摘要翻译： 在将导电层形成在基板的金属氧化物层上之后，对半导体器件的制造装置进行清洗。 衬底设置在设备的处理室中的加热器上，并且通过将源气体引入室中而形成导电层。 然后将基板转移出处理室。 源气体和金属氧化物层之间的反应的至少一个副产物附着到室内的表面，例如加热器的区域或区域。 一旦半导体衬底已被转移到半导体制造设备的处理室之外，副产物通过蒸发除去。 可以使用诸如源气体之一的气体蒸发副产物，使得处理室保持关闭。

公开(公告)号：US10074560B2

公开(公告)日：2018-09-11

申请号：US15601045

申请日：2017-05-22

申请人： Ki-hyun Yoon ,  Hauk Han ,  Yeon-sil Sohn ,  Seul-gi Bae ,  Hyun-seok Lim

发明人： Ki-hyun Yoon ,  Hauk Han ,  Yeon-sil Sohn ,  Seul-gi Bae ,  Hyun-seok Lim

IPC分类号： H01L21/768 ,  H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11578 ,  H01L29/792 ,  H01L21/822 ,  H01L27/11568 ,  H01L21/8239 ,  H01L27/105 ,  H01L27/11551

CPC分类号： H01L21/76841 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/8221 ,  H01L21/8239 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L27/1052 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/401 ,  H01L29/66477 ,  H01L29/78642 ,  H01L29/792 ,  H01L29/7926

摘要： A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.

公开(公告)号：US07538046B2

公开(公告)日：2009-05-26

申请号：US11583049

申请日：2006-10-19

申请人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

发明人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4405 ,  B08B7/00 ,  Y10S438/905

摘要： A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source gases into the chamber. Then the substrate is transferred out of the process chamber. At least one by-product of a reaction between the source gases and the metal oxide layer adheres to a surface inside the chamber, such as to a region or regions of the heater. Once the semiconductor substrate has been transferred outside the process chamber of the semiconductor fabrication apparatus, the by-product(s) is/are removed by evaporation. The by-product(s) can be evaporated using gas, such as one of the source gases, so that the process chamber can remain closed.

摘要翻译： 在将导电层形成在基板的金属氧化物层上之后，对半导体器件的制造装置进行清洗。 衬底设置在设备的处理室中的加热器上，并且通过将源气体引入室中而形成导电层。 然后将基板转移出处理室。 源气体和金属氧化物层之间的反应的至少一个副产物附着到室内的表面，例如加热器的区域或区域。 一旦半导体衬底已被转移到半导体制造设备的处理室之外，副产物通过蒸发除去。 可以使用诸如源气体之一的气体蒸发副产物，使得处理室保持关闭。

公开(公告)号：US20070037407A1

公开(公告)日：2007-02-15

申请号：US11583049

申请日：2006-10-19

申请人： In-Su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

发明人： In-Su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

IPC分类号： H01L21/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4405 ,  B08B7/00 ,  Y10S438/905

摘要： A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source gases into the chamber. Then the substrate is transferred out of the process chamber. At least one by-product of a reaction between the source gases and the metal oxide layer adheres to a surface inside the chamber, such as to a region or regions of the heater. Once the semiconductor substrate has been transferred outside the process chamber of the semiconductor fabrication apparatus, the by-product(s) is/are removed by evaporation. The by-product(s) can be evaporated using gas, such as one of the source gases, so that the process chamber can remain closed.

摘要翻译： 在将导电层形成在基板的金属氧化物层上之后，对半导体器件的制造装置进行清洗。 衬底设置在设备的处理室中的加热器上，并且通过将源气体引入室中而形成导电层。 然后将基板转移出处理室。 源气体和金属氧化物层之间的反应的至少一个副产物附着到室内的表面，例如加热器的区域或区域。 一旦半导体衬底已被转移到半导体制造设备的处理室之外，副产物通过蒸发除去。 可以使用诸如源气体之一的气体蒸发副产物，使得处理室保持关闭。

公开(公告)号：US06399491B2

公开(公告)日：2002-06-04

申请号：US09826946

申请日：2001-04-06

申请人： In-sang Jeon ,  Sang-bom Kang ,  Hyun-seok Lim ,  Gil-heyun Choi

发明人： In-sang Jeon ,  Sang-bom Kang ,  Hyun-seok Lim ,  Gil-heyun Choi

IPC分类号： H01L2144

CPC分类号： C23C16/45531 ,  C23C16/45527 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/7685

摘要： A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD. In the second embodiment, an impurity-removing gas is used to remove impurities in the barrier metal layer. Thus, even if the gas supply scheme is set up to only use ALD in creating the barrier metal layer, the deposition rate can be increased without the usual accompanying increase in the impurity content of the barrier metal layer.

摘要翻译： 制造阻挡金属层的方法使用原子层沉积（ALD）作为沉积阻挡金属的机理。 该方法包括以脉冲的形式将第一源气体提供到半导体衬底的整个表面上，并将与第一源气体反应的第二源气体以 一脉 在第一实施例中，脉冲在时间上重叠，使得第二源气体与物理吸附在半导体衬底的表面处的第一源气体的一部分反应，从而通过化学气相沉积形成阻挡金属层的一部分，而另一部分 第二源气体与化学吸附在半导体衬底的表面上的第一源气体反应，从而通过原子层沉积形成阻挡金属层的一部分。 因此，如果阻挡金属层仅由ALD形成，则沉积速率更大。 在第二实施例中，使用杂质去除气体来除去阻挡金属层中的杂质。 因此，即使将气体供给方案设定为仅使用ALD来制造阻挡金属层，也可以提高成膜速度，而​​不会妨碍阻挡金属层的杂质含量的增加。

公开(公告)号：US06287965B1

公开(公告)日：2001-09-11

申请号：US09511598

申请日：2000-02-23

申请人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

发明人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

IPC分类号： H01L2144

CPC分类号： H01L21/7687 ,  C23C16/34 ,  C23C16/45529 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L28/75

摘要： A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A—B—N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas. According to the composition ratio, a desirable electrical conductivity and resistance of the metal layer can be accurately obtained. The atomic layers are individually deposited, thereby realizing excellent step coverage even in a complex and compact region. A metal layer formed by atomic layer deposition can be employed as a barrier metal layer, a lower electrode or an upper electrode in a semiconductor device.

摘要翻译： 提供了使用原子层沉积形成具有优异的耐热和抗氧化特性的金属层的方法。 金属层包括反应性金属（A），用于反应性金属（A）和氮（N）之间的无定形组合的元素（B）和氮（N））。 反应性金属（A）可以是钛（Ti），钽（Ta），钨（W），锆（Zr），铪（Hf），钼（Mo）或铌（Nb）。 无定形组合元件（B）可以是铝（Al），硅（Si）或硼（B）。 通过根据原子层沉积将元件（A，B和N）的脉冲源气体交替地注入到室中来形成金属层，从而交替堆叠原子层。 因此，通过适当确定各源气体的喷射脉冲数，可以适当地调整金属层的氮化合物（A-B-N）的组成比。 根据组成比，可以准确地获得金属层所需的导电性和电阻。 原子层分别沉积，即使在复杂和紧凑的区域中也能实现优异的阶梯覆盖。 通过原子层沉积形成的金属层可以用作半导体器件中的阻挡金属层，下电极或上电极。