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114 条记录 (耗时 0.036 秒)

    Phase change memory device and method of operating the same
    1.
    发明授权
    Phase change memory device and method of operating the same 有权
    相变存储器件及其操作方法

    公开(公告)号：US07170777B2

    公开(公告)日：2007-01-30

    申请号：US11193413

    申请日：2005-08-01

    申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/008

    摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.

    摘要翻译： 提供了一种相变存储器件及其操作方法。 相变存储装置可以包括以行和列为单位排列成矩阵的多个单元， 排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。 每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

    Phase change memory device and method of operating the same
    2.
    发明申请
    Phase change memory device and method of operating the same 有权
    相变存储器件及其操作方法

    公开(公告)号：US20060092694A1

    公开(公告)日：2006-05-04

    申请号：US11193413

    申请日：2005-08-01

    申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    IPC分类号： G11C11/00

    CPC分类号： G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/008

    摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.

    摘要翻译： 提供了一种相变存储器件及其操作方法。 相变存储装置可以包括以行和列为单位排列成矩阵的多个单元， 排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。 每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

    Apparatus of depositing thin film with high uniformity
    4.
    发明申请
    Apparatus of depositing thin film with high uniformity 失效
    沉积高均匀度薄膜的设备

    公开(公告)号：US20050150461A1

    公开(公告)日：2005-07-14

    申请号：US10910417

    申请日：2004-08-04

    申请人： Young-eal Kim ,  Sang-jun Choi ,  Dong-joon Ma

    发明人： Young-eal Kim ,  Sang-jun Choi ,  Dong-joon Ma

    IPC分类号： C23C14/24 ,  C23C14/00 ,  C23C14/50 ,  C23C16/00 ,  H01L21/68 ,  H01L21/687

    CPC分类号： C23C14/505 ,  C23C14/243 ,  H01L21/68707

    摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

    摘要翻译： 在真空室中在晶片上沉积沉积材料的沉积设备包括安装在真空室中以蒸发沉积材料的沉积舟，加载晶片的晶片引导件，晶片引导件具有与 晶片转动装置，当晶片导向件接近时旋转旋转构件的晶片旋转装置以及在真空室的入口，沉积舟和晶片旋转装置之间使晶片导向件往复运动的晶片传送装置。

    Patterned deposition source unit and method of depositing thin film using the same
    5.
    发明申请
    Patterned deposition source unit and method of depositing thin film using the same 审中-公开
    图案化沉积源单元和使用其沉积薄膜的方法

    公开(公告)号：US20050129848A1

    公开(公告)日：2005-06-16

    申请号：US10902798

    申请日：2004-08-02

    申请人： Sang-jun Choi ,  Young-eal Kim ,  Dong-joon Ma

    发明人： Sang-jun Choi ,  Young-eal Kim ,  Dong-joon Ma

    IPC分类号： H01L21/203 ,  C23C14/24 ,  C23C16/00

    CPC分类号： C23C14/243

    摘要： Provided is a patterned deposition source unit for forming a thin film on a substrate and a deposition method using the same. The patterned deposition source unit includes a main body that includes a loading section for loading a deposition material and a cover unit, which covers openings of the loading section and has a plurality of line shaped openings. The deposition material vaporized through line shaped openings of the cover unit can be vertically deposited on the substrate which moves back and forth over the main body. The method enables the improvement in the uniformity of a thin film by preventing dispersion of the deposition material in a conventional depositor, and the improvement in the density of a thin film by increasing vapor flux per unit area by reducing the distance between the deposition source unit and the substrate.

    摘要翻译： 提供了一种用于在基板上形成薄膜的图案化沉积源单元和使用其的沉积方法。 图案化沉积源单元包括主体，该主体包括用于装载沉积材料的装载部分和覆盖装置，其覆盖装载部分的开口并且具有多个线状开口。 通过盖单元的线形开口蒸发的沉积材料可以垂直地沉积在基板上，该基板在主体上前后移动。 该方法通过防止沉积材料在常规沉积物中的分散而提高薄膜的均匀性，并且通过减小沉积源单元之间的距离来提高薄膜的密度，通过增加单位面积的蒸气通量来提高薄膜的密度 和基板。

    Resistive random access memory device
    6.
    发明授权
    Resistive random access memory device 失效
    电阻随机存取存储器件

    公开(公告)号：US07985961B2

    公开(公告)日：2011-07-26

    申请号：US12003133

    申请日：2007-12-20

    申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Chang-soo Lee

    发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Chang-soo Lee

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1226 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1675

    摘要： Example embodiments may provide resistive random access memory devices and/or methods of manufacturing resistive random access memory devices. Example embodiment resistive random access memory devices may include a switching device and/or a storage node connected to the switching device. The storage node may include a stack structure including a plurality of resistance change layers separated from one another and first and second electrodes each on a side wall of the stack structure. The resistance change layers may be connected to the first and the second electrodes in parallel and/or may have different switching voltages from each other.

    摘要翻译： 示例性实施例可以提供电阻性随机存取存储器件和/或制造电阻随机存取存储器件的方法。 示例性实施例电阻随机存取存储器设备可以包括连接到交换设备的交换设备和/或存储节点。 存储节点可以包括堆叠结构，其包括彼此分离的多个电阻变化层以及每个在堆叠结构的侧壁上的第一和第二电极。 电阻变化层可以并联连接到第一和第二电极和/或可以具有彼此不同的开关电压。

    Resistive random access memory device including an amorphous solid electrolyte layer
    9.
    发明申请
    Resistive random access memory device including an amorphous solid electrolyte layer 审中-公开
    包括无定形固体电解质层的电阻式随机存取存储器件

    公开(公告)号：US20070176264A1

    公开(公告)日：2007-08-02

    申请号：US11653316

    申请日：2007-01-16

    申请人： Jung-hyun Lee ,  Sang-jun Choi

    发明人： Jung-hyun Lee ,  Sang-jun Choi

    IPC分类号： H01L29/22

    CPC分类号： H01L45/04 ,  H01L45/145

    摘要： Provided is a resistive memory device including an amorphous solid electrolyte layer in a storage node. The resistive memory device includes a switching device and a storage node connected to the switching device. The storage node includes upper and lower electrodes formed of a bivalent or multivalent metal, and an amorphous solid electrolyte layer and an ion source layer formed of a monovalent metal between the upper and lower electrodes.

    摘要翻译： 提供了一种在存储节点中包括无定形固体电解质层的电阻式存储器件。 电阻式存储器件包括连接到开关器件的开关器件和存储节点。 存储节点包括由二价或多价金属形成的上电极和下电极，以及在上电极和下电极之间由非金属固体电解质层和由一价金属形成的离子源层。