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165 条记录 (耗时 0.05 秒)

    Phase change memory device and method of operating the same
    1.
    发明申请
    Phase change memory device and method of operating the same 有权
    相变存储器件及其操作方法

    公开(公告)号：US20060092694A1

    公开(公告)日：2006-05-04

    申请号：US11193413

    申请日：2005-08-01

    申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    IPC分类号： G11C11/00

    CPC分类号： G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/008

    摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.

    摘要翻译： 提供了一种相变存储器件及其操作方法。 相变存储装置可以包括以行和列为单位排列成矩阵的多个单元， 排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。 每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

    Phase change memory device and method of operating the same
    2.
    发明授权
    Phase change memory device and method of operating the same 有权
    相变存储器件及其操作方法

    公开(公告)号：US07170777B2

    公开(公告)日：2007-01-30

    申请号：US11193413

    申请日：2005-08-01

    申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/008

    摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.

    摘要翻译： 提供了一种相变存储器件及其操作方法。 相变存储装置可以包括以行和列为单位排列成矩阵的多个单元， 排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。 每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

    Methods of preparing a graphene sheet
    3.
    发明授权
    Methods of preparing a graphene sheet 有权
    制备石墨烯片的方法

    公开(公告)号：US08632855B2

    公开(公告)日：2014-01-21

    申请号：US12656823

    申请日：2010-02-17

    申请人： Xianyu Wenxu ,  Dong-joon Ma ,  Jung-hyun Lee

    发明人： Xianyu Wenxu ,  Dong-joon Ma ,  Jung-hyun Lee

    IPC分类号： B05D3/02 ,  C01B31/04

    CPC分类号： H05B3/145 ,  H05B2214/04

    摘要： Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.

    摘要翻译： 提供了制备碳基片材的方法，所述方法包括通过对包含含碳材料的基材进行退火处理，将基材上的含碳材料对准并在基板上形成碳基片材。 碳基片可以是石墨烯片。

    Method of manufacturing silicon film by using silicon solution process
    5.
    发明申请
    Method of manufacturing silicon film by using silicon solution process 有权
    使用硅溶液工艺制造硅膜的方法

    公开(公告)号：US20100304043A1

    公开(公告)日：2010-12-02

    申请号：US12659329

    申请日：2010-03-04

    申请人： Jung-hyun Lee ,  Dong-joon Ma

    发明人： Jung-hyun Lee ,  Dong-joon Ma

    IPC分类号： B05D3/06

    CPC分类号： C23C18/122 ,  C23C18/1254 ,  C23C18/14 ,  H01L21/288 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

    摘要： Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.

    摘要翻译： 提供可以通过使用Si溶液法制造硅（Si）膜的方法。 根据制造Si膜的方法，可以通过制备Si形成溶液来制造Si膜。 可以将紫外线（UV）照射在所制备的Si形成溶液中。 Si形成溶液可以涂覆在基底上，并且Si形成溶液中的溶剂可以涂覆在基底上。 可以将电子束照射在去除溶剂的Si形成溶液中。

    Methods of polarizing transparent conductive oxides, electronic devices including polarized transparent conductive oxides, and methods of manufacturing the electronic devices
    7.
    发明申请
    Methods of polarizing transparent conductive oxides, electronic devices including polarized transparent conductive oxides, and methods of manufacturing the electronic devices 审中-公开
    偏振透明导电氧化物的方法，包括偏光透明导电氧化物的电子器件，以及制造电子器件的方法

    公开(公告)号：US20100110346A1

    公开(公告)日：2010-05-06

    申请号：US12588383

    申请日：2009-10-14

    申请人： Jung-hyun Lee ,  Dong-joon Ma

    发明人： Jung-hyun Lee ,  Dong-joon Ma

    IPC分类号： G02F1/1347 ,  G21G1/10 ,  G02F1/13

    CPC分类号： G02F1/13439 ,  G02F2001/133397 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02689

    摘要： Provided are methods of polarizing a transparent conductive oxide (TCO), electronic devices including a polarized TCO, and methods of manufacturing the electronic devices. A transparent conductive oxide formed on a substrate is polarized by electron beam annealing the transparent conductive oxide until a polarization voltage is generated in the transparent conductive oxide. The transparent conductive oxide may be a ZnO film or AlZnO film, where A is a cation. The electron beam annealing may be performed at about room temperature for less than about 60 minutes.

    摘要翻译： 提供了使透明导电氧化物（TCO），包括极化TCO的电子器件偏振的方法和制造电子器件的方法。 形成在基板上的透明导电氧化物通过对透明导电氧化物进行电子束退火而极化，直到在透明导电氧化物中产生极化电压。 透明导电氧化物可以是ZnO膜或AlZnO膜，其中A是阳离子。 电子束退火可以在约室温下进行少于约60分钟。

    Non-volatile memory device including dummy electrodes and method of fabricating the same
    8.
    发明授权
    Non-volatile memory device including dummy electrodes and method of fabricating the same 有权
    包括虚拟电极的非易失性存储器件及其制造方法

    公开(公告)号：US08748969B2

    公开(公告)日：2014-06-10

    申请号：US12654470

    申请日：2009-12-22

    申请人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    发明人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

    Non-volatile memory device and method of fabricating the same
    10.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20100155826A1

    公开(公告)日：2010-06-24

    申请号：US12654470

    申请日：2009-12-22

    申请人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    发明人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC分类号： H01L27/115 ,  H01L21/8246 ,  H01L21/20

    CPC分类号： H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔插塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。