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33 条记录 (耗时 0.03 秒)

    Phase change memory device and method of operating the same
    1.
    发明申请
    Phase change memory device and method of operating the same 有权
    相变存储器件及其操作方法

    公开(公告)号：US20060092694A1

    公开(公告)日：2006-05-04

    申请号：US11193413

    申请日：2005-08-01

    申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    IPC分类号： G11C11/00

    CPC分类号： G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/008

    摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.

    摘要翻译： 提供了一种相变存储器件及其操作方法。 相变存储装置可以包括以行和列为单位排列成矩阵的多个单元， 排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。 每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

    Phase change memory device and method of operating the same
    2.
    发明授权
    Phase change memory device and method of operating the same 有权
    相变存储器件及其操作方法

    公开(公告)号：US07170777B2

    公开(公告)日：2007-01-30

    申请号：US11193413

    申请日：2005-08-01

    申请人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    发明人： Sang-jun Choi ,  Jung-hyun Lee ,  Dong-joon Ma ,  Wan-jun Park ,  Young-soo Park

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/008

    摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.

    摘要翻译： 提供了一种相变存储器件及其操作方法。 相变存储装置可以包括以行和列为单位排列成矩阵的多个单元， 排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。 每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

    Patterned deposition source unit and method of depositing thin film using the same
    4.
    发明申请
    Patterned deposition source unit and method of depositing thin film using the same 审中-公开
    图案化沉积源单元和使用其沉积薄膜的方法

    公开(公告)号：US20050129848A1

    公开(公告)日：2005-06-16

    申请号：US10902798

    申请日：2004-08-02

    申请人： Sang-jun Choi ,  Young-eal Kim ,  Dong-joon Ma

    发明人： Sang-jun Choi ,  Young-eal Kim ,  Dong-joon Ma

    IPC分类号： H01L21/203 ,  C23C14/24 ,  C23C16/00

    CPC分类号： C23C14/243

    摘要： Provided is a patterned deposition source unit for forming a thin film on a substrate and a deposition method using the same. The patterned deposition source unit includes a main body that includes a loading section for loading a deposition material and a cover unit, which covers openings of the loading section and has a plurality of line shaped openings. The deposition material vaporized through line shaped openings of the cover unit can be vertically deposited on the substrate which moves back and forth over the main body. The method enables the improvement in the uniformity of a thin film by preventing dispersion of the deposition material in a conventional depositor, and the improvement in the density of a thin film by increasing vapor flux per unit area by reducing the distance between the deposition source unit and the substrate.

    摘要翻译： 提供了一种用于在基板上形成薄膜的图案化沉积源单元和使用其的沉积方法。 图案化沉积源单元包括主体，该主体包括用于装载沉积材料的装载部分和覆盖装置，其覆盖装载部分的开口并且具有多个线状开口。 通过盖单元的线形开口蒸发的沉积材料可以垂直地沉积在基板上，该基板在主体上前后移动。 该方法通过防止沉积材料在常规沉积物中的分散而提高薄膜的均匀性，并且通过减小沉积源单元之间的距离来提高薄膜的密度，通过增加单位面积的蒸气通量来提高薄膜的密度 和基板。

    Apparatus of depositing thin film with high uniformity
    5.
    发明申请
    Apparatus of depositing thin film with high uniformity 失效
    沉积高均匀度薄膜的设备

    公开(公告)号：US20050150461A1

    公开(公告)日：2005-07-14

    申请号：US10910417

    申请日：2004-08-04

    申请人： Young-eal Kim ,  Sang-jun Choi ,  Dong-joon Ma

    发明人： Young-eal Kim ,  Sang-jun Choi ,  Dong-joon Ma

    IPC分类号： C23C14/24 ,  C23C14/00 ,  C23C14/50 ,  C23C16/00 ,  H01L21/68 ,  H01L21/687

    CPC分类号： C23C14/505 ,  C23C14/243 ,  H01L21/68707

    摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

    摘要翻译： 在真空室中在晶片上沉积沉积材料的沉积设备包括安装在真空室中以蒸发沉积材料的沉积舟，加载晶片的晶片引导件，晶片引导件具有与 晶片转动装置，当晶片导向件接近时旋转旋转构件的晶片旋转装置以及在真空室的入口，沉积舟和晶片旋转装置之间使晶片导向件往复运动的晶片传送装置。

    Methods of preparing a graphene sheet
    6.
    发明授权
    Methods of preparing a graphene sheet 有权
    制备石墨烯片的方法

    公开(公告)号：US08632855B2

    公开(公告)日：2014-01-21

    申请号：US12656823

    申请日：2010-02-17

    申请人： Xianyu Wenxu ,  Dong-joon Ma ,  Jung-hyun Lee

    发明人： Xianyu Wenxu ,  Dong-joon Ma ,  Jung-hyun Lee

    IPC分类号： B05D3/02 ,  C01B31/04

    CPC分类号： H05B3/145 ,  H05B2214/04

    摘要： Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.

    摘要翻译： 提供了制备碳基片材的方法，所述方法包括通过对包含含碳材料的基材进行退火处理，将基材上的含碳材料对准并在基板上形成碳基片材。 碳基片可以是石墨烯片。

    Non-volatile memory device including dummy electrodes and method of fabricating the same
    8.
    发明授权
    Non-volatile memory device including dummy electrodes and method of fabricating the same 有权
    包括虚拟电极的非易失性存储器件及其制造方法

    公开(公告)号：US08748969B2

    公开(公告)日：2014-06-10

    申请号：US12654470

    申请日：2009-12-22

    申请人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    发明人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

    Non-volatile memory device and method of fabricating the same
    10.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20100155826A1

    公开(公告)日：2010-06-24

    申请号：US12654470

    申请日：2009-12-22

    申请人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    发明人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC分类号： H01L27/115 ,  H01L21/8246 ,  H01L21/20

    CPC分类号： H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔插塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。