摘要:
A buffer for enabling a signal to be applied to a bus. The buffer includes a first transistor coupled to a bus and a voltage supply. The logic buffer includes a first logic circuit which has an input coupled to receive a data signal and adapted to charge a terminal of the transistor at a first rate in response to a transition in the data signal. A second logic circuit charges the terminal at a faster rate during an initial transition period, until a first preselected condition is met. The buffer also includes a third logic circuit to charge the terminal at a second faster rate during a final transition period, after a second preselected condition is met. A method for controlling a voltage level of a signal applied to a terminal of a transistor includes charging the terminal at a fast rate until a first preselected condition is met. The terminal is then charged at a slower rate, until a second preselected condition is met, at which time the terminal is charged at a second fast rate, which is also greater than the slower rate.
摘要:
A computer system with a semi-differential bus-signaling scheme is described. The computer system includes a transmitter coupled to a common bus. The transmitter sends clock signals and a data signal to logic-comparing devices within a receiver. The logic-comparing devices compare the data signal to a reference voltage while comparing the clock signals to each other. After the comparison, the clock signals can be used to capture the data into a retiming circuit.
摘要:
A method and apparatus for a strobe glitch protection mechanism for a source synchronous I/O link. One method of the present invention comprises separating a transfer clock having a plurality of transfer clock edges into a pointer path and a timing path. Glitches are filtered from signals on said pointer path. The pointer path and the timing path are coupled to generate latch enable signals to latch data bits.
摘要:
A three-dimensional (3D) high density memory array includes multiple layers of segmented bit lines (i.e., sense lines) with segment switch devices within the memory array that connect the segments to global bit lines. The segment switch devices reside on one or more layers of the integrated circuit, preferably residing on each bit line layer. The global bit lines reside preferably on one layer below the memory array, but may reside on more than one layer. The bit line segments preferably share vertical connections to an associated global bit line. In certain EEPROM embodiments, the array includes multiple layers of segmented bit lines with segment connection switches on multiple layers and shared vertical connections to a global bit line layer. Such memory arrays may be realized with much less write-disturb effects for half selected memory cells, and may be realized with a much smaller block of cells to be erased.
摘要:
An exemplary NAND string memory array provides for capacitive boosting of a half-selected memory cell channel to reduce program disturb effects of the half selected cell. To reduce the effect of leakage current degradation of the boosted level, multiple programming pulses of a shorter duration are employed to limit the time period during which such leakage currents may degrade the voltage within the unselected NAND strings. In addition, multiple series select devices at one or both ends of each NAND string further ensure reduced leakage through such select devices, for both unselected and selected NAND strings. In certain exemplary embodiments, a memory array includes series-connected NAND strings of memory cell transistors having a charge storage dielectric, and includes more than one plane of memory cells formed above a substrate.
摘要:
A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.
摘要:
An n-well resistor device and its method of fabrication. The n-well resistor device of the present invention comprises a first n-type region and a second n-type region formed in an n-type silicon region. A gate dielectric layer formed on said n-type silicon region. A polysilicon gate formed on said gate dielectric.
摘要:
A method and apparatus for compensating system components based on system topology. The present invention provides a method and apparatus for performance optimization through topology dependent compensation. In one embodiment, one or more components of a computer system are coupled to a bus via self-compensated buffer(s). The self-compensated buffer(s) allow operating characteristics to be set via external signals such as voltage levels. System components have compensation units that receive external signals and configure the operating characteristics of the self-compensated buffer(s). In this manner a system designer may set operating characteristics for various system components based on the topology of the specific system rather than designing for a worst-case scenario.
摘要:
A method and apparatus for glitch protection for differential strobe input buffers in a source-synchronous environment. The present invention provides a solution to the problem of noise sensitivity of differential strobe input buffers in a source-synchronous environment, which may cause functional problems. The present invention enables the use of fully differential strobe signals to improve electrical performance of the source synchronous data transfers while removing the noise sensitivity problem associated with these signals. This is accomplished by providing a glitch protection circuit that provides protection against input glitches for a first predetermined period of time after each strobe transition. The present invention also provides a detection circuit that detects when both differential strobe signals are in the same logic state, which corresponds to a transition between bus masters (a dead cycle). The detection circuit causes the glitch protection circuit to latch the output signal of the glitch detection circuit.
摘要:
A method and an apparatus for adjusting the slew rate and impedance of a buffer in an integrated circuitry. In one embodiment, an integrated circuit buffer includes a pre-driver circuit, which includes a slew rate compensation circuit, coupled to a driver circuit, which includes an impedance compensation circuit. The slew rate compensation circuit includes parallel connected p-channel transistors to power and parallel connected n-channel transistors to ground to provide a variable resistance to virtual rails for inverter circuits that are included in the pre-driver circuit. The slew rate compensation circuit is digitally controlled with slew rate control signals. The impedance compensation circuit includes parallel connected p-channel transistors to power and parallel connected n-channel transistors to ground from an output node of the buffer. The parallel connected transistors of the impedance compensation circuit are digitally controlled with impedance control signals. The resistance to power and ground from the respective rails of the pre-driver circuit are controlled with the slew rate control signals to adjust the slew rate of data signals being driven by the buffer. The rails are shared among the inverters of the driver circuit to reduce the number of devices used by the buffer, thereby reducing the amount of circuit area and power used by the buffer.