公开(公告)号：US10264154B2

公开(公告)日：2019-04-16

申请号：US16001394

申请日：2018-06-06

申请人： Satoru Hirakata ,  Kenichi Takeda

发明人： Satoru Hirakata ,  Kenichi Takeda

IPC分类号： H04N1/00 ,  G06F3/12

摘要： A system includes a server to distribute one or more applications and an image processing apparatus communicable with the server. The server includes circuitry. The circuitry receives information relating to a device type of the image processing apparatus from the image processing apparatus. The circuitry changes, based on the received information relating to the device type, a part of a screen design relating to an application list screen. The circuitry transmits, to the image processing apparatus, information relating to the application list screen in which the part of the screen design is changed based on the information relating to the device type. The browser executes an application command for transmitting the information relating to the device type to the server. The browser displays the application list screen in which the part of the screen design is changed based on the information relating to the device type.

公开(公告)号：US08033654B2

公开(公告)日：2011-10-11

申请号：US12893726

申请日：2010-09-29

申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element includes a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

摘要翻译： 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的（100）面的晶体形成的a畴的a畴，a畴包括具有正常 基本上平行于压电薄膜的主弯曲方向的（001）面的轴线和与压电薄膜的主弯曲方向垂直的法线轴（001）面的B域，A畴具有 体积比例大于50体积％，相对于A结构域的体积和B结构域的体积的总和。

公开(公告)号：US07912944B2

公开(公告)日：2011-03-22

申请号：US11802545

申请日：2007-05-23

申请人： Keiji Nagai ,  Yutaka Nakamura ,  Koji Dan ,  Masato Takahashi ,  Yuuki Inoue ,  Shogo Hyakutake ,  Fujio Takahashi ,  Yoshiaki Murata ,  Kenichi Takeda

发明人： Keiji Nagai ,  Yutaka Nakamura ,  Koji Dan ,  Masato Takahashi ,  Yuuki Inoue ,  Shogo Hyakutake ,  Fujio Takahashi ,  Yoshiaki Murata ,  Kenichi Takeda

IPC分类号： G06F15/173

CPC分类号： G03G15/55 ,  G03G15/5079 ,  G03G15/553 ,  G03G2215/00109

摘要： A disclosed information processing apparatus includes an information processing unit configured to operate as a daemon process; an information displaying unit configured to operate as a process different from the daemon process and display a screen relevant to the information processing unit; a first ending unit configured to end the information displaying unit due to a first factor; and a second ending unit configured to end the information displaying unit due to a second factor different from the first factor. The information displaying unit ends the information processing unit in the event of receiving a request to end from the first ending unit and the information displaying unit does not end the information processing unit in the event of receiving a request to end from the second ending unit.

摘要翻译： 公开的信息处理设备包括：信息处理单元，被配置为作为守护进程操作; 信息显示单元，被配置为作为与所述守护进程不同的处理进行操作，并且显示与所述信息处理单元相关的屏幕; 第一结束单元，被配置为由于第一因素而结束信息显示单元; 以及第二结束单元，被配置为由于与第一因素不同的第二因素而结束信息显示单元。 信息显示单元在从第一结束单元接收到结束的请求的情况下结束信息处理单元，并且在从第二结束单元接收到结束的请求的情况下，信息显示单元不结束信息处理单元。

公开(公告)号：US20110018945A1

公开(公告)日：2011-01-27

申请号：US12893726

申请日：2010-09-29

申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

IPC分类号： B41J2/045 ,  H01L41/00 ,  H01L41/22

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

摘要翻译： 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的（100）面的晶体形成的a畴的a畴，A畴包括具有正常的 基本上平行于压电薄膜的主弯曲方向的（001）面的轴线和与压电薄膜的主弯曲方向垂直的法线轴（001）面的B域，A畴具有 体积比例大于50体积％，相对于A结构域的体积和B结构域的体积的总和。

公开(公告)号：US07854484B2

公开(公告)日：2010-12-21

申请号：US12149787

申请日：2008-05-08

申请人： Kenichi Takeda

发明人： Kenichi Takeda

IPC分类号： A47B81/06

CPC分类号： H04N5/64 ,  H04N5/655

摘要： A recess made up of a rear bushing part receiving part and a front cord guiding part is formed as a space between a pair of rib walls opposed to each other in the left and right direction at a vicinity of an edge rim of a front cabinet on a side to be connected to a rear cabinet. First and second groove parts are formed on inner wall faces of the rib walls opposed to each other sandwiching the bushing part receiving part so as to engage respectively with the first and the second flange parts of the bushing part. The second groove part of the rib walls has no wall at the front side and is open to the cord guiding part.

摘要翻译： 由后套筒部容纳部和前帘线引导部构成的凹部形成为在左右方向上彼此相对的一对肋壁之间的空间，在前框的边缘附近 要连接到后机柜的一侧。 第一和第二槽部形成在彼此相对的肋壁的内壁面上，夹着衬套部件接收部，以分别与衬套部的第一和第二凸缘部接合。 肋壁的第二槽部在前侧没有壁，并且与帘线引导部开放。

公开(公告)号：US07622852B2

公开(公告)日：2009-11-24

申请号：US12031176

申请日：2008-02-14

申请人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

发明人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

IPC分类号： H01L41/04 ,  H01L41/187

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

摘要翻译： 本发明提供一种压电性能大的压电膜，以及压电元件，液体排出头和利用该压电元件的液体排出装置。 压电膜由具有至少四方晶系结构的<100>取向的外延氧化物形成，其中氧化物是由通式ABO 3表示的钙钛矿型复合氧化物，并且至少含有C，D和E的畴， 100]取向在晶体方向上具有相互偏离，其中区域C和D中的结构域C和D中的结构域D和E中的区域C和E以及区域D和E中的角度偏差分别为5°或更小，5 °或更小，0.3°以下，0.3°以上，域C，E以及区域D，E的[001]方向的角度偏差分别为1.0°以上1.0°以上。

公开(公告)号：US07582901B2

公开(公告)日：2009-09-01

申请号：US11059651

申请日：2005-02-17

申请人： Kenichi Takeda ,  Tsuyoshi Fujiwara ,  Toshinori Imai ,  Tsuyoshi Ishikawa ,  Toshiyuki Mine ,  Makoto Miura

发明人： Kenichi Takeda ,  Tsuyoshi Fujiwara ,  Toshinori Imai ,  Tsuyoshi Ishikawa ,  Toshiyuki Mine ,  Makoto Miura

IPC分类号： H01L29/76

CPC分类号： H01L28/40 ,  H01L21/76838

摘要： An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.

摘要翻译： 使用诸如氧化钽的高介电常数电介质膜的MIM电容器。 MIM电容器包括上电极，电介质膜和下电极。 在MIM电容器的端部，在上电极和下电极之间形成第二电介质膜和电介质膜。 第二电介质膜形成为在下电极的顶部具有开口。 电介质膜经由开口抵接下电极。 上电极形成在电介质膜上。 上部电极和电介质膜以完全包围开口的方式形成，并且第二电介质膜和下部电极形成为使得各个宽度与上部的宽度相同或更大 电极和电介质膜。

公开(公告)号：US20080043283A1

公开(公告)日：2008-02-21

申请号：US11882722

申请日：2007-08-03

申请人： Kenichi Takeda

发明人： Kenichi Takeda

IPC分类号： G06F3/12

CPC分类号： H04N1/387 ,  G06F3/1297 ,  H04N1/00204 ,  H04N1/32117 ,  H04N2201/0091 ,  H04N2201/3254

摘要： An image forming apparatus determines whether orientation of an image is specified in the instructions associated with the print data. If orientation is not specified, the orientation (Portrait or Landscape) is set based on printing conditions provided in the associated instructions. The printing conditions can be document size, rotation angle, or print layout.

摘要翻译： 图像形成装置确定在与打印数据相关联的指令中是否指定图像的取向。 如果未指定方向，则根据相关说明中提供的打印条件设置方向（纵向或横向）。 打印条件可以是文档大小，旋转角度或打印布局。

公开(公告)号：US07301261B2

公开(公告)日：2007-11-27

申请号：US11062619

申请日：2005-02-23

申请人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki ,  Kenichi Takeda ,  Kiyotaka Wasa

发明人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki ,  Kenichi Takeda ,  Kiyotaka Wasa

IPC分类号： H01L41/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

摘要翻译： 一种电介质元件，其具有设置在上电极层和下电极层之间的电介质层，其中所述电介质层具有第一介电层和第二介电层，所述第一电介质层和第二电介质层的组成相互不同，并且所述第一介电层的至少一个部件的组成 在第一介电层和第二介电层之间的边界附近的第一介电层的厚度方向的变化。

公开(公告)号：US20070090730A1

公开(公告)日：2007-04-26

申请号：US11582403

申请日：2006-10-18

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： H01L41/187

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/318

摘要： To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.

摘要翻译： 为了提供能够获得高质量钙钛矿型氧化物薄膜的成膜方法，具有由通过成膜方法形成的薄膜构成的压电体的压电元件，具有压电元件的液体排出头和具有 液体排放头。 一种形成具有由（A1 ，A2＆gt; A3＆lt; z＆gt;）表示的组成的钙钛矿型氧化物薄膜的方法（B1＆ B 1，B 2，B 1，B 2，B 3，N 2，B 3，N 3， 是一种成膜方法，其具有多个步骤，用于将含有元素的材料提供到基底上，将元件A1至A3和B1至B5分成多个组，并将含有 包含在基团中的元素在单独的步骤中。