公开(公告)号：US06839293B2

公开(公告)日：2005-01-04

申请号：US10288461

申请日：2002-11-06

申请人： Satoru Kawamoto ,  Motoki Mizutani ,  Shinji Nagai ,  Yoshiharu Kato

发明人： Satoru Kawamoto ,  Motoki Mizutani ,  Shinji Nagai ,  Yoshiharu Kato

IPC分类号： G01R31/26 ,  G01R31/28 ,  G11C11/401 ,  G11C29/02 ,  G11C29/04 ,  G11C29/06 ,  G11C29/50 ,  G11C29/00 ,  G11C7/00

CPC分类号： G11C29/025 ,  G11C17/14 ,  G11C29/02 ,  G11C29/50 ,  G11C2029/0403

摘要： A semiconductor memory device having a burn-in test capability. The semiconductor memory device includes a detection circuit, which is connected to the plurality of word lines. The detection circuit detects whether a stress voltage for a burn-in test has been applied to all of the word lines along their entire lengths in the burn-in test.

摘要翻译： 具有老化测试能力的半导体存储器件。 半导体存储器件包括连接到多个字线的检测电路。 检测电路检测在老化测试中，老化测试的应力电压是否已沿其整个长度应用于所有字线。

公开(公告)号：US06501691B2

公开(公告)日：2002-12-31

申请号：US09768459

申请日：2001-01-25

申请人： Satoru Kawamoto ,  Motoki Mizutani ,  Shinji Nagai ,  Yoshiharu Kato

发明人： Satoru Kawamoto ,  Motoki Mizutani ,  Shinji Nagai ,  Yoshiharu Kato

IPC分类号： G11C700

CPC分类号： G11C29/025 ,  G11C17/14 ,  G11C29/02 ,  G11C29/50 ,  G11C2029/0403

摘要： A semiconductor memory device having a burn-in test capability. The semiconductor memory device includes a detection circuit, which is connected to the plurality of word lines. The detection circuit detects whether a stress voltage for a burn-in test has been applied to all of the word lines along their entire lengths in the burn-in test.

摘要翻译： 具有老化测试能力的半导体存储器件。 半导体存储器件包括连接到多个字线的检测电路。 检测电路检测在老化测试中，老化测试的应力电压是否已沿其整个长度应用于所有字线。

公开(公告)号：US08471227B2

公开(公告)日：2013-06-25

申请号：US13293914

申请日：2011-11-10

申请人： Kouji Kakizaki ,  Shinji Nagai ,  Tatsuya Yanagida

发明人： Kouji Kakizaki ,  Shinji Nagai ,  Tatsuya Yanagida

IPC分类号： G01N21/33 ,  G21K5/02 ,  H05H1/00

摘要： An extreme ultraviolet light source apparatus in which a target material is irradiated with a laser beam and turned into plasma and extreme ultraviolet light is emitted from the plasma may include: a chamber in which the extreme ultraviolet light is generated; an electromagnetic field generation unit for generating at least one of an electric field and a magnetic field inside the chamber; and a cleaning unit for charging and separating debris adhered to an optical element inside the chamber.

公开(公告)号：US08242474B2

公开(公告)日：2012-08-14

申请号：US13032172

申请日：2011-02-22

申请人： Shinji Nagai ,  Tamotsu Abe ,  Takanobu Ishihara ,  Osamu Wakabayashi

发明人： Shinji Nagai ,  Tamotsu Abe ,  Takanobu Ishihara ,  Osamu Wakabayashi

IPC分类号： G01N21/33 ,  H01J1/50 ,  G21K5/08

CPC分类号： H05G2/003 ,  G01J3/10 ,  G03F7/70033 ,  H05G2/005 ,  H05G2/008

摘要： An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.

摘要翻译： 一种与激光系统组合使用的极紫外光发生装置，该装置可以包括：设置有至少一个入口的腔室，用于将从激光系统输出的激光束引入腔室; 目标供给单元，其设置在所述室中，用于将所述目标材料供给到所述室内的预定区域，所述目标材料用所述激光束照射; 设置在所述室内的至少一个光学元件; 用于产生围绕预定区域的磁场的磁场产生单元; 离子收集单元，设置在所述磁场的磁力线的方向上，用于收集当所述靶材料被所述激光束照射并沿着所述磁力线流动时产生的离子; 以及用于将蚀刻气体引入到室中的气体引入单元。

公开(公告)号：US20120091893A1

公开(公告)日：2012-04-19

申请号：US13336749

申请日：2011-12-23

申请人： Tatsuya YANAGIDA ,  Akira Endo ,  Hiroshi Komori ,  Shinji Nagai ,  Kouji Kakizaki ,  Tamotsu Abe ,  Hideo Hoshino

发明人： Tatsuya YANAGIDA ,  Akira Endo ,  Hiroshi Komori ,  Shinji Nagai ,  Kouji Kakizaki ,  Tamotsu Abe ,  Hideo Hoshino

IPC分类号： H05H1/46

CPC分类号： H05G2/003 ,  G03F7/70033 ,  G03F7/70916 ,  H05G2/005 ,  H05G2/008

摘要： In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.

摘要翻译： 在EUV光源装置中，集光镜受到保护，不会损坏镜面涂层。 EUV光源装置包括：产生极紫外光的室; 目标供应单元，用于将目标材料供应到所述室中; 等离子体产生激光器单元，用于用等离子体产生激光束照射室内的目标材料以产生等离子体; 电离激光单元，用于用电离激光束照射在等离子体产生时产生的中性粒子，以将中性粒子转化为离子; 用于收集从等离子体辐射的极紫外光的收集镜; 以及用于在室内形成磁场或电场以捕获离子的磁场或电场形成单元。

公开(公告)号：US08067756B2

公开(公告)日：2011-11-29

申请号：US12646075

申请日：2009-12-23

申请人： Yoshifumi Ueno ,  Georg Soumagne ,  Shinji Nagai ,  Akira Endo ,  Tatsuya Yanagida

发明人： Yoshifumi Ueno ,  Georg Soumagne ,  Shinji Nagai ,  Akira Endo ,  Tatsuya Yanagida

IPC分类号： H05G2/00 ,  G01J3/10

CPC分类号： H05G2/003 ,  H05G2/008

摘要： In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.

摘要翻译： 在极紫外光源装置中，通过用激光照射作为熔融Sn的液滴D而产生的等离子体产生极紫外光，并且控制在产生极紫外光时产生的离子的流动方向 通过磁场或电场照射光，离子收集筒20被布置成用于收集离子，离子收集筒20的离子碰撞表面Sa和Sb设置有或涂覆有Si，溅射速率 相对于离子小于一个原子/离子。

公开(公告)号：US07965756B2

公开(公告)日：2011-06-21

申请号：US12545495

申请日：2009-08-21

申请人： Osamu Wakabayashi ,  Shinji Nagai ,  Kouji Kakizaki ,  Satoshi Tanaka

发明人： Osamu Wakabayashi ,  Shinji Nagai ,  Kouji Kakizaki ,  Satoshi Tanaka

IPC分类号： H01S3/22

CPC分类号： H01S3/005 ,  G02B1/02 ,  H01S3/0057 ,  H01S3/08009 ,  H01S3/08054 ,  H01S3/10061 ,  H01S3/2251

摘要： At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.

摘要翻译： 进入平面或出射平面的光中的至少任一个平行于CaF 2晶体的（111）晶面，并且从入射平面入射的激光束穿过位于[111]轴和第一方位角 [001]轴围绕[111]轴的旋转轨迹的轴线，包括[111]轴和第一方位轴，位于旋转轨迹中的[111]轴和第二方位角轴之间的平面 围绕[111]轴的[010]轴线，并且包括[111]轴和第二方位角轴或位于[111]轴和第三方位角之间的平面 围绕[111]轴并且包括[111]轴和第三方位角轴并从出射平面离开。

公开(公告)号：US20100054297A1

公开(公告)日：2010-03-04

申请号：US12545495

申请日：2009-08-21

申请人： Osamu WAKABAYASHI ,  Shinji Nagai ,  Kouji Kakizaki ,  Satoshi Tanaka

发明人： Osamu WAKABAYASHI ,  Shinji Nagai ,  Kouji Kakizaki ,  Satoshi Tanaka

IPC分类号： H01S3/08

CPC分类号： H01S3/005 ,  G02B1/02 ,  H01S3/0057 ,  H01S3/08009 ,  H01S3/08054 ,  H01S3/10061 ,  H01S3/2251

摘要： At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.

摘要翻译： 进入平面或出射平面的光中的至少任一个平行于CaF 2晶体的（111）晶面，并且从入射平面入射的激光束穿过位于[111]轴和第一方位角 [001]轴围绕[111]轴的旋转轨迹的轴线，包括[111]轴和第一方位轴，位于旋转轨迹中的[111]轴和第二方位角轴之间的平面 围绕[111]轴的[010]轴线，并且包括[111]轴和第二方位角轴或位于[111]轴和第三方位角之间的平面 围绕[111]轴并且包括[111]轴和第三方位角轴并从出射平面离开。

公开(公告)号：US06636297B2

公开(公告)日：2003-10-21

申请号：US09842230

申请日：2001-04-26

申请人： Osamu Wakabayashi ,  Tatsuo Enami ,  Shinji Nagai

发明人： Osamu Wakabayashi ,  Tatsuo Enami ,  Shinji Nagai

IPC分类号： G01J300

CPC分类号： G01J9/00 ,  G01J1/4257

摘要： A vacuum ultraviolet laser wavelength measuring apparatus capable of accurately measuring wavelength characteristics of a laser beam. The wavelength measuring apparatus has spectral devices for generating an optical pattern corresponding to wavelength characteristics of an incident laser beam and measuring wavelength characteristics of a laser beam in a vacuum ultraviolet region oscillating from a vacuum ultraviolet laser on the basis of the optical pattern. The apparatus has a fluorescent screen for generating a fluorescent pattern having an intensity distribution corresponding to an intensity distribution of the incident optical pattern, a pattern detector for measuring the intensity distribution of the fluorescent pattern, and arithmetic unit for calculating the wavelength characteristics of the laser beam on the basis of the measured intensity distribution.

摘要翻译： 一种能够精确地测量激光束的波长特性的真空紫外激光波长测量装置。 波长测量装置具有用于产生与入射激光束的波长特性相对应的光学图案的光谱装置，并且基于光学图案测量从真空紫外激光器振荡的真空紫外区域中的激光束的波长特性。 该装置具有用于产生具有对应于入射光学图案的强度分布的强度分布的荧光图案的荧光屏，用于测量荧光图案的强度分布的图案检测器和用于计算激光器的波长特性的算术单元 基于测量的强度分布。

公开(公告)号：US06243163B1

公开(公告)日：2001-06-05

申请号：US09398191

申请日：1999-09-17

申请人： Osamu Wakabayashi ,  Tatsuo Enami ,  Shinji Nagai ,  Toru Suzuki ,  Takeshi Ohta ,  Hirokazu Kubo

发明人： Osamu Wakabayashi ,  Tatsuo Enami ,  Shinji Nagai ,  Toru Suzuki ,  Takeshi Ohta ,  Hirokazu Kubo

IPC分类号： G01J328

CPC分类号： G01J9/00 ,  G01J3/28

摘要： The present invention can accurately detect a wavelength of a light to be detected, which is output from a source of light to be detected, without an error even if there is a change in the characteristic of a spectroscope due to an individual difference among the spectroscopes or a change in the measuring environment. The device according to the invention emits at least two reference lights (Ln, La) having different wavelengths (&lgr;n, &lgr;a) as the reference lights by reference light source. And, actual characteristic value (D) of spectroscope is calculated on the basis of detection positions (Sn, Sa) of the at least two reference lights (Ln, La) on a sensor and the known wavelengths (&lgr;n, &lgr;a) of the at least two reference lights (Ln, La) (D=(&lgr;a−&lgr;n)/(Sa−Sn)). And, on the basis of the detection positions (Sn, SO) of the reference light (Ln) and the light to be detected (LO) on the sensor (10), the calculated actual characteristic value (D) of the spectroscope and the known wavelength (&lgr;n) of the reference light (Ln), wavelength (&lgr;O) of the light to be detected (LO) is calculated (&lgr;O=&lgr;n+(SO−Sn)·D).

摘要翻译： 即使由于各分光器之间的个体差异而导致的分光器的特性发生变化，本发明也能够准确地检测从被检测光源输出的被检测光的波长 或测量环境的变化。 根据本发明的装置通过参考光源发射具有不同波长（lambdn，λ））的至少两个参考光（Ln，La）作为参考光。 并且，基于传感器上的至少两个参考光（Ln，La）的检测位置（Sn，Sa）以及在传感器上的已知波长（lambdn，λ）来计算分光计的实际特征值（D） 至少两个参考光（Ln，La）（D =（λ-lambdn）/（Sa-Sn）））。 并且，基于传感器（10）上的基准光（Ln）和被检测光（LO）的检测位置（Sn，SO），计算出的分光器的实际特性值（D）和 计算参考光（Ln）的已知波长（lambdn），待检测光（LO）的波长（lambd0）（lambdO = lambdn +（SO-Sn）.D）。