公开(公告)号：US6155148A

公开(公告)日：2000-12-05

申请号：US101875

申请日：1998-07-20

申请人： Satoru Shinozaki ,  Susumu Nagayama

发明人： Satoru Shinozaki ,  Susumu Nagayama

IPC分类号： B23B5/48 ,  B23G3/00 ,  B23Q15/00 ,  G05B19/18 ,  B23B1/00

CPC分类号： G05B19/186 ,  G05B2219/45214 ,  G05B2219/50225 ,  Y02P90/265 ,  Y10T409/300112 ,  Y10T82/10 ,  Y10T82/16016 ,  Y10T82/20 ,  Y10T82/2502

摘要： A basic spiral operation of a tool is controlled by storing, in a controller, an automatic operation program of a threading cycle which regulates the basic spiral operation of the tool corresponding to a thread shape by specifying a spindle revolving speed RC, a thread lead ZR and a thread cutting finish point Z2 or the like. A depth of cut by the tool is determined by an operator who operates a handle of a manual pulse generator to cut the work and confirms the cutting conditions.

摘要翻译： PCT No.PCT / JP97 / 04547 Sec。 371日期：1998年7月20日 102（e）日期1998年7月20日PCT 1997年12月10日PCT PCT。 第WO98 / 25724号公报 日期1998年6月18日通过在控制器中存储通过指定主轴转速RC来调节对应于螺纹形状的工具的基本螺旋操作的螺纹循环的自动操作程序来控制刀具的基本螺旋操作 丝线ZR和切线终点Z2等。 由工具切割的深度由操作手动脉冲发生器的手柄的操作者确定，以切割工件并确认切割条件。

公开(公告)号：US06269283B1

公开(公告)日：2001-07-31

申请号：US09077096

申请日：1998-05-19

申请人： Satoru Shinozaki ,  Susumu Nagayama

发明人： Satoru Shinozaki ,  Susumu Nagayama

IPC分类号： G06F1900

CPC分类号： G05B19/4061 ,  G05B19/409 ,  G05B2219/33004 ,  G05B2219/33008 ,  G05B2219/36314 ,  G05B2219/49137 ,  G05B2219/49157

摘要： A machining limit area specifying method and a manual feed machining method using a numerical control unit capable of easily performing machining in a desired shape by manual feed. In specifying a machining limit area on an X-Y plane, a desired machining shape is defined by shaping data or a combination of some shaping data on the X-Y plane at a predetermined Z-coordinate, and the desired machining shape defined by the shaping data is specified as a machining limit area in which movement of a tool is permitted on the X-Y plane in manual machining using the numerical control unit. In specifying a machining limit area in the Z-axis direction, an inverse function using an X- or Y-coordinate value as a parameter is obtained based on a function for specifying the machining limit area on the X-Y plane on condition that a Z-coordinate value is used as a parameter, and the machining limit area in the Z-axis direction is specified based on the inverse function.

摘要翻译： 使用能够通过手动进给容易地进行所需形状的加工的数控单元的加工限制区域指定方法和手动进给加工方法。 在XY平面上指定加工限制区域时，通过在XY平面上以预定的Z坐标成形数据或某些成形数据的组合来定义所需的加工形状，并且指定由成形数据定义的期望的加工形状 作为在使用数字控制单元的手动加工中在XY平面上允许工具移动的加工限制区域。 在指定Z轴方向的加工限制区域时，基于用于指定XY平面上的加工极限区域的功能，获得使用X或Y坐标值作为参数的反函数，条件是Z- 坐标值用作参数，并且基于反函数来指定Z轴方向上的加工限制区域。

公开(公告)号：US4937651A

公开(公告)日：1990-06-26

申请号：US899160

申请日：1986-08-22

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

IPC分类号： H01L27/142 ,  H01L31/0216 ,  H01L31/20

CPC分类号： H01L31/02167 ,  H01L31/046 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

公开(公告)号：US4806496A

公开(公告)日：1989-02-21

申请号：US7780

申请日：1987-01-28

申请人： Kunio Suzuki ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Susumu Nagayama ,  Masayoshi Abe ,  Shunpei Yamazaki

发明人： Kunio Suzuki ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Susumu Nagayama ,  Masayoshi Abe ,  Shunpei Yamazaki

IPC分类号： H01L27/142 ,  H01L31/20 ,  H01L31/18 ,  H01L21/322

CPC分类号： H01L31/208 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.

摘要翻译： 通过在制造过程的最终步骤期间修复设备，以高产率制造光电转换装置。 可以通过向层加上反向电压来消除由半导体层的形成过程产生的短路电流，从而被加热并制成绝缘。 在消除短路电流之后，反向电流在8V的反向电压下不再超过15mA。

公开(公告)号：US4713518A

公开(公告)日：1987-12-15

申请号：US740764

申请日：1985-06-03

申请人： Shunpei Yamazaki ,  Kenji Itoh ,  Susumu Nagayama

发明人： Shunpei Yamazaki ,  Kenji Itoh ,  Susumu Nagayama

IPC分类号： B41M5/26 ,  H01L21/302 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/0392 ,  H05K3/02 ,  B23K26/00

CPC分类号： H01L31/03921 ,  H01L21/302 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H05K3/027 ,  Y02E10/50 ,  Y10S438/94

摘要： In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.

摘要翻译： 在制造具有至少透明导电层的电子器件的方法中，其至少包括形成透明导电层部件的步骤和通过使用点状形成透明导电层部件来形成透明导电层的步骤 或线性激光束或光束，其每一个具有400nm或更小的短波长和大于透明导电层的光能带隙的光能。

公开(公告)号：US5089426A

公开(公告)日：1992-02-18

申请号：US464567

申请日：1990-01-16

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Kaoru Koyanagi ,  Susumu Nagayama

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Kaoru Koyanagi ,  Susumu Nagayama

IPC分类号： H01L27/142 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L31/02021 ,  H01L31/02167 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29 ,  Y10S438/94

摘要： An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.

公开(公告)号：US4986213A

公开(公告)日：1991-01-22

申请号：US251940

申请日：1988-09-28

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

摘要： An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

公开(公告)号：US4874920A

公开(公告)日：1989-10-17

申请号：US298263

申请日：1989-01-13

申请人： Shunpei Yamazaki ,  Kenji Itoh ,  Susumu Nagayama

发明人： Shunpei Yamazaki ,  Kenji Itoh ,  Susumu Nagayama

IPC分类号： B41M5/26 ,  H01L21/302 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/0392 ,  H05K3/02

CPC分类号： H01L31/03921 ,  H01L21/302 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H05K3/027 ,  Y02E10/50 ,  Y10S438/94

摘要： In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.

摘要翻译： 在制造具有至少透明导电层的电子器件的方法中，其至少包括形成透明导电层部件的步骤和通过使用点状形成透明导电层部件来形成透明导电层的步骤 或线性激光束或光束，其每一个具有400nm或更小的短波长和大于透明导电层的光能带隙的光能。

公开(公告)号：US4888305A

公开(公告)日：1989-12-19

申请号：US320788

申请日：1989-03-09

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

摘要： An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

摘要翻译： 公开了一种改进的半导体处理。 在制造过程中，刚刚形成的半导体层经历光退火，潜在的悬挂键出现在表面和间隙上，然后将中和剂引入半导体的氛围。 这样形成的半导体表现出SEL效应代替Staebler-Wronski效应。

公开(公告)号：US4704624A

公开(公告)日：1987-11-03

申请号：US725742

申请日：1985-04-22

申请人： Shunpei Yamazaki ,  Susumu Nagayama

发明人： Shunpei Yamazaki ,  Susumu Nagayama

IPC分类号： G03B13/26 ,  G03B13/06 ,  G03B17/20 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18 ,  H01L27/14

CPC分类号： H01L31/077 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： A semiconductor photoelectric conversion device comprises a first non-single crystal semiconductor layer of a first conductivity type. A second non-single crystal semiconductor layer of substantially an intrinsic conductivity type is formed on the first semiconductor layer; the second layer comprises a first crystallized region and a second crystallized region. The second crystallized region has a similar crystalline structure as that of the first semiconductor layer and extends from the first semiconductor layer toward the first crystallized region where the degree of crystallization of the first crystallized region is less than that of the second crystallized region. A third non-single crystal semiconductor layer of a second semiconductor type opposite to said first conductivity type is formed on the intrinsic layer.

摘要翻译： 半导体光电转换装置包括第一导电类型的第一非单晶半导体层。 在第一半导体层上形成基本上是本征导电型的第二非单晶半导体层; 第二层包括第一结晶区域和第二结晶区域。 第二结晶区域具有与第一半导体层相似的晶体结构，并且从第一半导体层向第一结晶化区域延伸，其中第一结晶区域的结晶度小于第二结晶区域的结晶度。 在本征层上形成与所述第一导电类型相反的第二半导体类型的第三非单晶半导体层。