-
1.发明授权公开(公告)号：US08559290B2
公开(公告)日：2013-10-15
申请号：US12893332
申请日：2010-09-29
申请人： Satoshi Inoue , Yuta Yoshida , Naoto Hashimoto , Suguru Takishima
发明人： Satoshi Inoue , Yuta Yoshida , Naoto Hashimoto , Suguru Takishima
IPC分类号： G11B7/00
CPC分类号： G11B7/1374 , G02B13/16 , G11B7/1353 , G11B7/1376
摘要： An optical information recording/reproducing optical system where resin material has Tg>115° C., first, second and third films are on an optical disc side of an objective lens and surfaces of an optical element, respectively, a light source side of the objective lens has a fourth film having four or more layers not containing Ti, each of the first, second and third films includes a non-high refractive index layer made of one of silicon oxide, aluminum oxide, aluminum fluoride and magnesium fluoride or a mixture of at least two of them, each of the first, second and third films is not made of one of Ti, Ta, Hf, Zr, Nb, Mo and Cr, a layer of the fourth film closest to a base material is the non-high refractive index layer. The fourth film satisfies 350
摘要翻译： 一种光学信息记录/再现光学系统，其中树脂材料具有Tg> 115℃，第一，第二和第三薄膜位于物镜的光盘侧，光学元件的表面分别为 物镜具有不含Ti的四层以上的第四膜，第一膜，第二膜和第三膜中的每一层均包含由氧化硅，氧化铝，氟化铝和氟化镁之一构成的非高折射率层或混合物 其中至少两个，第一，第二和第三膜中的每一个不是由Ti，Ta，Hf，Zr，Nb，Mo和Cr中的一种制成，所以第四膜最靠近基材的层是非 高折射率层。 第四片满足350
-
2.发明授权公开(公告)号：US08339925B2
公开(公告)日：2012-12-25
申请号：US12893382
申请日：2010-09-29
申请人： Satoshi Inoue , Yuta Yoshida , Naoto Hashimoto , Suguru Takishima
发明人： Satoshi Inoue , Yuta Yoshida , Naoto Hashimoto , Suguru Takishima
IPC分类号： G11B7/00
CPC分类号： G11B7/1374 , G02B13/16 , G11B7/1376
摘要： An optical information recording/reproducing optical system, comprising a light source; an optical element converting a laser beam into a substantially collimated beam; and an objective lens, wherein a wavelength λ (unit: nm) of the laser beam falls within a range of 400 115° C., each of optical surfaces is configured not to have an optical thin film which contains at least one of or elements of titanium, tantalum, hafnium, zirconium, niobium, molybdenum and chromium, each of optical surfaces of the optical element is provided with an antireflection film made of one of or a mixture of at least two of silicon oxide, aluminum oxide, aluminum fluoride and magnesium fluoride, and a following condition is satisfied ∏ i = 1 n - 1 ( 1 - R ( BL ) i 100 ) - ∏ i = 1 n - 1 ( 1 - R ( UV ) i 100 ) > 0.05 .
摘要翻译： 一种光信息记录/再现光学系统，包括光源; 将激光束转换成基本上准直的光束的光学元件; 和物镜，其中激光束的波长λ（单位：nm）落在400 <λ<410的范围内，光学元件和物镜由相同的树脂材料或具有玻璃化转变的不同树脂材料制成 Tg> 115℃的温度下，每个光学表面被配置为不具有包含钛，钽，铪，锆，铌，钼和铬中的至少一种或元素的光学薄膜，每个光学表面 光学元件设置有由氧化硅，氧化铝，氟化铝和氟化镁中的至少两种中的一种或其混合物制成的抗反射膜，满足以下条件Πi = 1 n-1（1- R（BL）i 100） - Πi = 1 n - 1（1-R（UV）i 100）> 0.05。
-
3.发明授权公开(公告)号：US08305865B2
公开(公告)日：2012-11-06
申请号：US12893268
申请日：2010-09-29
申请人： Satoshi Inoue , Yuta Yoshida , Naoto Hashimoto , Suguru Takishima
发明人： Satoshi Inoue , Yuta Yoshida , Naoto Hashimoto , Suguru Takishima
IPC分类号： G11B7/135
CPC分类号： G11B7/1374
摘要： An objective lens for an optical information recording/reproducing optical system for an optical disc letting a laser beam impinge on a recording layer of the optical disc, and wherein a center wavelength λ (unit: nm) of the laser beam is in a range defined by a condition: 390≦λ≦420, a base material of the objective lens is made of resin, the resin has a glass transition temperature Tg and light transmissivity T (unit: %) per a path length of 3 mm at a wavelength of 406 nm defined by conditions: Tg≧115° C., 85≦T≦90, same antireflection films or different types of antireflection films are respectively formed on optical surfaces of the objective lens, and each of the antireflection films formed on the objective lens has a thickness of 100 nm or more in a vicinity of an optical axis of the objective lens.
摘要翻译： 一种用于光盘的光学信息记录/再现光学系统的物镜，其使激光束照射在光盘的记录层上，并且其中激光束的中心波长λ（单位：nm）在限定的范围内 通过条件：390＆nlE;λ＆nlE; 420，物镜的基材由树脂制成，树脂的玻璃化转变温度Tg和光透射率T（单位：％），每个路径长度为3mm，波长为 由条件限定的406nm：Tg≥115℃，85＆lt; NE; T＆lt; NE; 90，在物镜的光学表面上分别形成相同的防反射膜或不同类型的抗反射膜，并且形成在物镜上的每个防反射膜 在物镜的光轴附近具有100nm以上的厚度。
-
公开(公告)号：US08547723B2
公开(公告)日：2013-10-01
申请号：US13398418
申请日：2012-02-16
申请人： Shinji Tanaka , Makoto Yabuuchi , Yuta Yoshida
发明人： Shinji Tanaka , Makoto Yabuuchi , Yuta Yoshida
IPC分类号： G11C8/08
CPC分类号： G11C11/419 , G11C5/06 , G11C5/063 , G11C7/08 , G11C7/227 , G11C8/08 , G11C8/10 , G11C11/415 , G11C11/418
摘要： A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines. Each column direction load circuit is provided with plural NMOS transistors fixed to an off state, predetermined ones of which have the source and the drain suitably coupled to any of the dummy bit lines. Load capacitance accompanying diffusion layer capacitance of the predetermined NMOS transistors is added to the dummy bit lines, and corresponding to the load capacitance, the delay time from a decode activation signal to a dummy bit line signal is set up. The dummy bit line signal is employed when setting the start-up timing of a sense amplifier.
摘要翻译： 提供了具有减小操作时序的变化的存储单元的半导体器件。 例如，半导体器件设置有与适当的位线相对布置的虚拟位线，以及顺序耦合到虚拟位线的列方向负载电路。 每个列方向负载电路设置有多个固定在截止状态的NMOS晶体管，其中预定的NMOS晶体管具有适当地耦合到任何虚拟位线的源极和漏极。 将与预定NMOS晶体管的扩散层电容相关的负载电容加到虚拟位线，并且对应于负载电容，建立从解码激活信号到虚拟位线信号的延迟时间。 当设置读出放大器的启动定时时，采用虚拟位线信号。
-
公开(公告)号：US20120224405A1
公开(公告)日：2012-09-06
申请号：US13398418
申请日：2012-02-16
申请人： Shinji TANAKA , Makoto Yabuuchi , Yuta Yoshida
发明人： Shinji TANAKA , Makoto Yabuuchi , Yuta Yoshida
IPC分类号： G11C5/06
CPC分类号： G11C11/419 , G11C5/06 , G11C5/063 , G11C7/08 , G11C7/227 , G11C8/08 , G11C8/10 , G11C11/415 , G11C11/418
摘要： A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines. Each column direction load circuit is provided with plural NMOS transistors fixed to an off state, predetermined ones of which have the source and the drain suitably coupled to any of the dummy bit lines. Load capacitance accompanying diffusion layer capacitance of the predetermined NMOS transistors is added to the dummy bit lines, and corresponding to the load capacitance, the delay time from a decode activation signal to a dummy bit line signal is set up. The dummy bit line signal is employed when setting the start-up timing of a sense amplifier.
摘要翻译： 提供了具有减小操作时序的变化的存储单元的半导体器件。 例如，半导体器件设置有与适当的位线相对布置的虚拟位线，以及顺序耦合到虚拟位线的列方向负载电路。 每个列方向负载电路设置有多个固定在截止状态的NMOS晶体管，其中预定的NMOS晶体管具有适当地耦合到任何虚拟位线的源极和漏极。 将与预定NMOS晶体管的扩散层电容相关的负载电容加到虚拟位线，并且对应于负载电容，建立从解码激活信号到虚拟位线信号的延迟时间。 当设置读出放大器的启动定时时，采用虚拟位线信号。
-
公开(公告)号：US08223814B2
公开(公告)日：2012-07-17
申请号：US12888670
申请日：2010-09-23
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/02276 , H01S5/22 , H01S5/4031 , H01S2301/176
摘要： The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.
摘要翻译： 本发明提供一种半导体激光器，其即使在温度差大的恶劣环境下也能够降低布置在空气中的配线层的可能性。 在相邻的脊之间设置沟槽，并且在空气中至少在沟槽上方设置电连接上电极和焊盘电极的布线层。 沟槽上方部分的布线层具有朝沟槽凹陷的扁平形状或凹形。 通过这种结构，抑制了在温差大的恶劣环境下布线层重复膨胀和收缩时布线层中的应变累积。
-
公开(公告)号：US09284657B2
公开(公告)日：2016-03-15
申请号：US14361143
申请日：2011-11-30
摘要： A replenisher which is capable of supplying Zr ions to a metal surface treatment solution, while suppressing an increase in the HF concentration in the metal surface treatment solution, so that a chemical conversion coating film can be continuously formed on a steel sheet by electrolysis and contains (A) zirconium hydrofluoric acid or a salt thereof and/or (B) hydrofluoric acid or a salt thereof and (C) a fluorine-free zirconium compound. The total concentration (g/l) of zirconium ions derived from the components (A) and (C) is 20 or more, and the ratio of the total molar amount (MF) of the fluorine ions derived from the components (A) and (B) relative to the total molar amount (MZr) of the zirconium ions derived from the components (A) and (C), namely MF/MZr is 0.01 or more but less than 4.00.
摘要翻译： 能够在金属表面处理液中抑制金属表面处理液中的HF浓度上升的同时能够向金属表面处理液供给Zr离子的补充剂，能够通过电解在钢板上连续地形成化学转化膜， （A）氢氟酸锆或其盐和/或（B）氢氟酸或其盐和（C）无氟锆化合物。 从（A）成分和（C）成分得到的锆离子的总浓度（g / l）为20以上，来自（A）成分的氟离子的总摩尔量（MF） （A）和（C）衍生的锆离子的总摩尔量（MZr），即MF / MZr为0.01以上且小于4.00。
-
公开(公告)号：US09099640B2
公开(公告)日：2015-08-04
申请号：US13575544
申请日：2011-01-26
申请人： Masahiro Takano , Kenichi Hirosaki , Yuta Yoshida , Takuya Nagata , Shou Makino , Satoru Ichimura , Takashi Yoshida , Masayuki Ishida , Hiroshi Kawai , Mikio Takimoto , Kentaro Nakamura
发明人： Masahiro Takano , Kenichi Hirosaki , Yuta Yoshida , Takuya Nagata , Shou Makino , Satoru Ichimura , Takashi Yoshida , Masayuki Ishida , Hiroshi Kawai , Mikio Takimoto , Kentaro Nakamura
IPC分类号： H01L41/047 , H01L41/09 , H02N2/00
CPC分类号： H01L41/0913 , H01L41/047 , H02N2/004
摘要： Electrodes (7, 8, 9), having curved sections in the shape of the outline thereof, are disposed in areas of a rectangular plate-shaped piezoelectric transducer element (1) in which the strain in the natural mode of vibration is large. The electrodes (7, 8) which excite a bending vibration are disposed in areas in which the strain in the bending natural mode is at least a predetermined value, and the outline curved sections of the electrodes (7, 8) are shaped so as to follow along strain contours (3, 4), and the electrode (9) which excites a stretching vibration is disposed in an area in which the strain in the stretching natural mode is at least a predetermined value, thus providing a transducer for an ultrasonic motor which aims to reduce transducer loss (increasing vibration efficiency), and improve transducer durability and reliability.
摘要翻译： 具有其轮廓形状的弯曲部分的电极（7,8,9）设置在其中自然振动模式下的应变大的矩形板状压电换能器元件（1）的区域中。 激励弯曲振动的电极（7,8）设置在弯曲自然模式中的应变至少为预定值的区域中，并且电极（7,8）的轮廓弯曲部分成形为 遵循应变轮廓（3,4），并且激发伸缩振动的电极（9）设置在拉伸自然模式中的应变至少为预定值的区域中，从而提供用于超声波马达的换能器 旨在减少传感器损耗（提高振动效率），提高传感器的耐用性和可靠性。
-
公开(公告)号：US20120293043A1
公开(公告)日：2012-11-22
申请号：US13575544
申请日：2011-01-26
申请人： Masahiro Takano , Kenichi Hirosaki , Yuta Yoshida , Takuya Nagata , Shou Makino , Satoru Ichimura , Takashi Yoshida , Masayuki Ishida , Hiroshi Kawai , Mikio Takimoto , Kentaro Nakamura
发明人： Masahiro Takano , Kenichi Hirosaki , Yuta Yoshida , Takuya Nagata , Shou Makino , Satoru Ichimura , Takashi Yoshida , Masayuki Ishida , Hiroshi Kawai , Mikio Takimoto , Kentaro Nakamura
IPC分类号： H02N2/04
CPC分类号： H01L41/0913 , H01L41/047 , H02N2/004
摘要： Electrodes (7, 8, 9), having curved sections in the shape of the outline thereof, are disposed in areas of a rectangular plate-shaped piezoelectric transducer element (1) in which the strain in the natural mode of vibration is large. The eletrodes (7, 8) which excite a bending vibration are disposed in areas in which the strain in the bending natural mode is at least a predetermined value, and the outline curved sections of the electrodes (7, 8) are shaped so as to follow along strain contours (3, 4), and the electrode (9) which excites a stretching vibration is disposed in an area in which the strain in the stretching natural mode is at least a predetermined value, thus providing a transducer for an ultrasonic motor which aims to reduce transducer loss (increasing vibration efficiency), and improve transducer durability and reliability.
摘要翻译： 具有其轮廓形状的弯曲部分的电极（7,8,9）设置在其中自然振动模式下的应变大的矩形板状压电换能器元件（1）的区域中。 激励弯曲振动的电极（7,8）设置在弯曲自然模式中的应变至少为预定值的区域中，并且电极（7,8）的轮廓弯曲部分成形为 遵循应变轮廓（3,4），并且激发伸缩振动的电极（9）设置在拉伸自然模式中的应变至少为预定值的区域中，从而提供用于超声波马达的换能器 旨在减少传感器损耗（提高振动效率），提高传感器的耐用性和可靠性。
-
公开(公告)号：US08619829B2
公开(公告)日：2013-12-31
申请号：US12813235
申请日：2010-06-10
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/2275
摘要： The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.
摘要翻译： 本发明提供一种半导体激光装置，包括：多个发光部分，其平行排列成条状; 分别沿着所述发光部的顶面配置的多个第一电极; 覆盖所述多个第一电极的整个表面的绝缘膜，并且分别包括对应于所述第一电极的接触孔; 与所述多个发光部的位置不同的多个第二电极，对应于所述第一电极; 布置在所述绝缘层上的多个布线层，并分别通过所述接触孔与所述第二电极和所述对应的第一电极电连接; 以及多个窗口区域，其布置成用于绝缘膜中的发光部分，以分别暴露第一电极，并且包括至少两个具有彼此不同区域的窗口区域。
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.022 秒)
