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公开(公告)号：US06633376B1
公开(公告)日：2003-10-14
申请号：US09719610
申请日：2000-12-12
IPC分类号： G01N2158
CPC分类号： G01R31/309 , G01N21/88 , G01N21/8901 , G01N21/956
摘要： As a scanning device for positioning the irradiation position of the laser beam emitted from a laser oscillator at a position of arbitrary coordinates in the commanded mutually orthogonal X-axis direction and Y-axis direction, two galvanomirrors having mutually orthogonal rotary axes and a scan lens are provided, and the light generated from a printed circuit board irradiated with laser beam is detected by a detector, and approval or rejection of inspection result at each position of coordinates is judged on the basis of the output signal of the detector.
摘要翻译： 作为用于将从激光振荡器发射的激光束的照射位置定位在指令的相互正交的X轴方向和Y轴方向上的任意坐标的位置的扫描装置，具有相互正交的旋转轴的两个电流计镜和扫描透镜 并且由检测器检测从用激光束照射的印刷电路板产生的光，并且基于检测器的输出信号来判断在坐标的每个位置处的检查结果的批准或拒绝。
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2.发明授权公开(公告)号：US06972392B2
公开(公告)日：2005-12-06
申请号：US09994719
申请日：2001-11-28
申请人： Miki Kurosawa , Tsukasa Fukushima , Masanori Mizuno , Shozui Takeno , Masaharu Moriyasu , Masayuki Kaneko
发明人： Miki Kurosawa , Tsukasa Fukushima , Masanori Mizuno , Shozui Takeno , Masaharu Moriyasu , Masayuki Kaneko
CPC分类号： H05K3/0032 , B23K26/389 , H05K2203/0554 , H05K2203/081
摘要： In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to about 200 μs and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape.
摘要翻译： 在布线基板的激光加工方法中，通过脉冲激光束照射约10〜约200μA的束照射时间，能量密度约为20J / cm·SUP的布线基板的加工部 > 2以上，从而对布线板进行加工，例如钻孔，通孔和盲孔，切槽，切割成外形。
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3.发明申请Pulsed laser beam machining method and apparatus for machining a wiring board at multiple locations 审中-公开脉冲激光束加工方法和装置，用于在多个位置加工布线板公开(公告)号：US20050184035A1
公开(公告)日：2005-08-25
申请号：US11087568
申请日：2005-03-24
申请人： Miki Kurosawa , Tsukasa Fukushima , Masanori Mizuno , Shozui Takeno , Masaharu Moriyasu , Masayuki Kaneko
发明人： Miki Kurosawa , Tsukasa Fukushima , Masanori Mizuno , Shozui Takeno , Masaharu Moriyasu , Masayuki Kaneko
CPC分类号： H05K3/0032 , B23K26/389 , H05K2203/0554 , H05K2203/081
摘要： In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to 200 μs and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape. The laser beam operates at a frequency of more than 67 Hz, and the spot of the laser beam is sequentially moved to different drilling positions for each pulse. After all of many drilling positions in the range of a scan vision are irradiated with the laser beam pulse by pulse, or after the elapse of a time of 15 ms or more from irradiation of the first drilling position, the laser spot is returned to the first drilling position. The spot is sequentially moved once again, and the movement is repeated several times. A pause of 15 ms or more is required between pulses directed to the same drilling position to avoid formation of a thick char layer and projection of glass cloth into the hole.
摘要翻译： 在布线基板的激光加工方法中，对于线束板的加工部照射约10〜200μm的束照射时间的脉冲激光束，能量密度约为20J / 2以上，从而对布线板进行加工，例如钻孔，通孔和盲孔，切槽和切割成外形。 激光束以大于67Hz的频率工作，并且激光束的光点顺序地移动到每个脉冲的不同的钻孔位置。 在扫描视野范围内的所有许多钻孔位置用脉冲照射激光束脉冲之后，或者在从第一钻孔位置照射经过15ms以上的时间之后，激光点返回到 第一钻孔位置。 点再次依次移动，运动重复多次。 在指向相同钻孔位置的脉冲之间需要15ms或更长的暂停，以避免形成厚的炭层并将玻璃布投射到孔中。
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公开(公告)号：US06373026B1
公开(公告)日：2002-04-16
申请号：US09549498
申请日：2000-04-14
申请人： Miki Kurosawa , Tsukasa Fukushima , Masanori Mizuno , Shozui Takeno , Masaharu Moriyasu , Masayuki Kaneko
发明人： Miki Kurosawa , Tsukasa Fukushima , Masanori Mizuno , Shozui Takeno , Masaharu Moriyasu , Masayuki Kaneko
IPC分类号： B23K2638
CPC分类号： H05K3/0032 , B23K26/389 , H05K2203/0554 , H05K2203/081
摘要： In a laser beam machining method for a wiring board, a machined portion of the wiring board is irradiated with a pulsed laser beam for a beam irradiation time ranging from about 10 to about 200 &mgr;s and with energy density of about 20 J/cm2 or more, thereby machining the wiring board, for example, drilling for a through-hole and a blind via hole, grooving, and cutting for an outside shape.
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公开(公告)号：US06875951B2
公开(公告)日：2005-04-05
申请号：US10111611
申请日：2001-07-27
IPC分类号： B23K26/06 , B23K26/067 , B23K26/08 , B23K26/38
CPC分类号： B23K26/0608 , B23K26/0643 , B23K26/0648 , B23K26/067 , B23K26/08 , B23K26/082 , B23K26/382 , B23K2103/50
摘要： A laser machining device according to the invention is provided with a laser oscillator for generating a laser beam, a main deflecting galvannometer mirror, an Fθ lens, and a sub-deflecting means arranged in an optical path between the laser oscillator and the main deflecting galvanometer mirror. A means for splitting a laser beam is provided, and the sub-deflecting means is inserted into the optical path of one of the split laser beams. At the same time, both the split laser beams are incident from the same main deflecting galvannometer mirror to the Fθ lens, and a numerical aperture in the optical system constituted by the main deflecting galvannometer mirror, the Fθ lens, and an object is set to be not more than 0.08.
摘要翻译： 根据本发明的激光加工装置设置有用于产生激光束的激光振荡器，主偏转电流计镜，Ftheta透镜和布置在激光振荡器和主偏转电流计之间的光路中的副偏转装置 镜子。 提供了用于分割激光束的装置，并且将副偏转装置插入到一个分割激光束的光路中。 同时，分离的激光束都从相同的主偏转加速计反射镜入射到Ftheta透镜，并且由主偏转加速计镜，Ftheta透镜和物体构成的光学系统中的数值孔径被设置为 不超过0.08。
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公开(公告)号：US5178725A
公开(公告)日：1993-01-12
申请号：US673652
申请日：1991-03-21
CPC分类号： H05K3/0029 , B23K15/08 , B23K26/40 , C04B41/53 , B23K2203/52 , H05K1/0306 , H05K2201/0166 , H05K2203/0285 , H05K3/002 , H05K3/0055
摘要： A process is provided for working a base material which essentially consists of a ceramic material. The process includes an irradiation process of irradiating a laser beam or an electron beam to the base material in order to form an affected portion having cracks in the base material and a removing process for removing the affected portion. The ceramic material includes an oxide ceramic material (for example, alumina and forsterite) and a carbide ceramic material. The shape and the depth of the portion to be worked are controlled by the scanning of the laser beam or the electron beam. The removing process can include any one of the processes of vibrating the base material, applying a thermal shock to the base material and etching the base material. In accordance with the present invention, a base material which essentially consists of an oxide ceramic material or a carbide ceramic material can be worked with high aspect ratio and in a shorter period of time than in a conventional process.
摘要翻译： 提供了一种用于加工基本上由陶瓷材料组成的基材的方法。 该方法包括将激光束或电子束照射到基材上以形成在基材中具有裂纹的受影响部分和去除受影响部分的去除工艺的照射过程。 陶瓷材料包括氧化物陶瓷材料（例如氧化铝和镁橄榄石）和碳化物陶瓷材料。 被加工部分的形状和深度通过激光束或电子束的扫描来控制。 除去过程可以包括使基材振动的过程中的任何一种，对基材进行热冲击并蚀刻基材。 根据本发明，基本上由氧化物陶瓷材料或碳化物陶瓷材料组成的基材可以以高的纵横比和比常规方法更短的时间段进行加工。
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公开(公告)号：US5532434A
公开(公告)日：1996-07-02
申请号：US278167
申请日：1994-07-21
摘要： An insulated wire having a conductor coated with insulating material wherein a light absorbing layer is provided between the conductor and the insulating material, thereby an insulating coating can be easily peeled off by means of laser.
摘要翻译： 一种绝缘电线，其具有涂覆有绝缘材料的导体，其中在导体和绝缘材料之间设置有光吸收层，由此可以通过激光容易地剥离绝缘涂层。
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公开(公告)号：US06329671B1
公开(公告)日：2001-12-11
申请号：US09642830
申请日：2000-08-22
申请人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
发明人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
IPC分类号： H01L2358
CPC分类号： H01L21/3043 , H01L21/78
摘要： A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.
摘要翻译： 制备半导体晶片，其包括在其表面上具有多个功能器件的半导体层和围绕并分离多个功能器件的分离线区域。 在半导体区域的分离线区域的表面上形成金属层。 在半导体晶片的表面上形成增强层。 通过选择性地蚀刻半导体层的背面，形成围绕功能元件的周边的孔，穿过半导体层并从后表面到达金属层。 从半导体晶片去除加强板。 金属层用激光照射并熔合，以提供彼此分离的多个半导体芯片。
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公开(公告)号：US06690024B1
公开(公告)日：2004-02-10
申请号：US09618721
申请日：2000-07-18
申请人： Koji Funaoka , Masahiko Sakamoto , Shozui Takeno , Hiroshi Sasai
发明人： Koji Funaoka , Masahiko Sakamoto , Shozui Takeno , Hiroshi Sasai
IPC分类号： G01N2188
CPC分类号： G01N21/47 , G01N21/64 , G01N21/956 , G01N21/95692 , G01N2021/95638
摘要： A laser inspection apparatus has a light source 13 for outputting laser beam, application means 5, 33, 34 for irradiating the laser beam 7 output from the light source 13 to any desired position of a detected body 21, first detection means 2 for detecting fluorescence 8 generated from the detected body 21 to which the laser beam 7 is applied, and second detection means 3 for detecting reflected light 8 scattered on a surface of the detected body 21 to which the laser beam 7 is applied.
摘要翻译： 激光检查装置具有用于输出激光束的光源13，用于将从光源13输出的激光束7照射到检测体21的任何期望位置的施加装置5,33,34，用于检测荧光的第一检测装置2 8是从被施加激光束7的检测体21产生的第二检测装置3，以及用于检测在被施加激光束7的检测体21的表面上散射的反射光8的第二检测装置3。
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公开(公告)号：US6136668A
公开(公告)日：2000-10-24
申请号：US169928
申请日：1998-10-09
申请人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
发明人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
IPC分类号： H01L21/301 , H01L21/304 , H01L23/58
CPC分类号： H01L21/3043
摘要： A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.
摘要翻译： 制备半导体晶片，其包括在其表面上具有多个功能器件的半导体层和围绕并分离多个功能器件的分离线区域。 在半导体区域的分离线区域的表面上形成金属层。 在半导体晶片的表面上形成增强层。 通过选择性地蚀刻半导体层的背面，形成围绕功能元件的周边的孔，穿过半导体层并从后表面到达金属层。 从半导体晶片去除加强板。 金属层用激光照射并熔合，以提供彼此分离的多个半导体芯片。
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