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公开(公告)号：US20080296497A1
公开(公告)日：2008-12-04
申请号：US12168232
申请日：2008-07-07
IPC分类号： G01N23/00
CPC分类号： G01N1/32 , G01N1/28 , G01N2001/028 , G01N2001/045 , G01N2001/282 , H01J37/20 , H01J37/302 , H01J37/3056 , H01J2237/2007 , H01J2237/201 , H01J2237/202 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749
摘要： A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.
摘要翻译： 一种用于分析半导体器件的系统，包括：第一离子束装置，包括：样品台，用于安装样品基板; 其中放置样品台的真空室; 离子束照射光学系统照射样品基板; 样本保持器，其容纳通过离子束的照射与样品基板分离的多个样本; 以及从所述样品基材中提取分离出的试样并将分离的试样转移到所述试样保持器的探针。 对样品进行精加工的第二离子束装置; 以及用于分析成品样品的分析器，其中所述第一离子束装置在真空条件下分离所述样品和所述探针。
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公开(公告)号：US20080296516A1
公开(公告)日：2008-12-04
申请号：US12168238
申请日：2008-07-07
IPC分类号： G21K5/00
CPC分类号： G01N1/32 , G01N1/28 , G01N2001/028 , G01N2001/045 , G01N2001/282 , H01J37/20 , H01J37/302 , H01J37/3056 , H01J2237/2007 , H01J2237/201 , H01J2237/202 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749
摘要： A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold, the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted.
摘要翻译： 一种试样制造装置，包括：离子束照射光学系统，用离子束照射放置在腔室中的样品; 用于安装通过用离子束照射分离的样本的样本保持器; 用于保持样品架的保持器盒; 样品台，样品和保持盒; 以及用于将样本移动到样本保持器的探针，其中，在保持样本保持器的状态下，保持器盒被转移到腔室的外部。
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公开(公告)号：US20120273692A1
公开(公告)日：2012-11-01
申请号：US13547942
申请日：2012-07-12
申请人： Mitsuo TOKUDA , Muneyuki FUKUDA , Yasuhiro MITSUI , Hidemi KOIKE , Satoshi TOMIMATSU , Hiroyasu SHICHI , Hideo KASHIMA , Kaoru UMEMURA
发明人： Mitsuo TOKUDA , Muneyuki FUKUDA , Yasuhiro MITSUI , Hidemi KOIKE , Satoshi TOMIMATSU , Hiroyasu SHICHI , Hideo KASHIMA , Kaoru UMEMURA
IPC分类号： H01J3/14
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。
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公开(公告)号：US20110174974A1
公开(公告)日：2011-07-21
申请号：US13007272
申请日：2011-01-14
申请人： Mitsuo TOKUDA , Muneyuki FUKUDA , Yasuhiro MITSUI , Hidemi KOIKE , Satoshi TOMIMATSU , Hiroyasu SHICHI , Hideo KASHIMA , Kaoru UMEMURA
发明人： Mitsuo TOKUDA , Muneyuki FUKUDA , Yasuhiro MITSUI , Hidemi KOIKE , Satoshi TOMIMATSU , Hiroyasu SHICHI , Hideo KASHIMA , Kaoru UMEMURA
IPC分类号： G01N23/00
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。
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公开(公告)号：US20090173888A1
公开(公告)日：2009-07-09
申请号：US12318583
申请日：2008-12-31
申请人： Hiroyasu SHICHI , Shinichi MATSUBARA , Takashi OHSHIMA , Satoshi TOMIMATSU , Tomihiro HASHIZUME , Tohru ISHITANI
发明人： Hiroyasu SHICHI , Shinichi MATSUBARA , Takashi OHSHIMA , Satoshi TOMIMATSU , Tomihiro HASHIZUME , Tohru ISHITANI
CPC分类号： H01J27/26 , H01J37/08 , H01J2237/0805 , H01J2237/0807 , H01J2237/182
摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.
摘要翻译： 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。
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