摘要:
An on-chip voltage reference supply operates in the current domain rather than the voltage domain, implemented with a single diode drop to reduce power supply headroom requirements. A plurality of current generators generate currents representing a first design voltage. A gain circuit responds to the currents to supply a gain voltage representing the sum of the first design voltages. A summing circuit sums the gain voltage and a second design voltage to derive the predetermined reference voltage.
摘要:
A method for producing a chip is disclosed. A first step of the method may involve first fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step of the method may be to design a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form an electrostatic discharge clamp at a power domain crossing. A third step may include second fabricating the chip to add the upper metal layers.
摘要:
A method for producing a chip is disclosed. A first step of the method may involve fabricating the chip only up to and including a first metal layer during a first manufacturing phase such that an input/output (I/O) region of the chip has a plurality of slots, where each of the slots has a plurality of first transistors. A second step of the method may involve designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the first transistors to form a plurality of mixed-signal building block functions. A third step of the method may involve fabricating the chip to add the upper metal layers during a second manufacturing phase.
摘要:
A method for producing a chip is disclosed. A first step of the method may include fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step generally involves designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form (i) a mixed-signal module and (ii) a digital module, the mixed signal module generating at least one analog signal and at least one digital signal. In a third step, the method may include fabricating the chip to add the upper metal layers.
摘要:
A sample and hold in a switched capacitor circuit with frequency shaping. The sample and hold does not require a pair of large area, power-consuming operational amplifiers and, as such, consumes less power and less area. Preferably, the sample and hold is operable in four different states wherein a different set of switches are closed in each of the four states. The switches are controlled by two clock signals and a plurality of signals derived from the two clock signals, such as four signals derived from the two clock signals. Desirably, the sample and hold with frequency shaping is configured to sample a voltage across a first capacitor while a second capacitor is disconnected from said first capacitor, and is configured to thereafter connect the second capacitor to the first capacitor and possibly discharge at least a portion of a charge held in the first capacitor into the second capacitor.
摘要:
A platform application specific integrated circuit (ASIC) including a base layer. The base layer generally comprises a predefined input/output (I/O) region and a predefined core region. The predefined input/output (I/O) region may comprise a plurality of pre-diffused regions disposed in the platform ASIC. The predefined core region may comprise one or more metal layers defining a plurality of power regions formed according to a custom design created after the base layer is fabricated. The base layer can be customized by depositing one or more metal layers.
摘要:
An apparatus comprising an integrated circuit and a logic portion. The integrated circuit may have a plurality of regions each (i) pre-diffused and configured to be metal-programmed and (ii) configured to connect the integrated circuit to a socket. The logic portion may be implemented on the integrated circuit. The plurality of metal programmable regions are each (i) independently programmable and (ii) located in one of said pre-diffused regions. Each of the metal programmable regions comprises (a) a regulator section configured to generate an operating voltage from a common supply voltage, (b) a logic section configured to implement integrated circuit functions and operate at the operating voltage, and (c) a level shifter configured to shift the operating voltage to an external voltage level.
摘要:
A built in self test circuit for testing an analog to digital converter. An up counter receives a test input and a first clock signal and provides and upper limit. A down counter receives the test input and the first clock signal, and provides a lower limit. A digital to analog converter receives the test input and a second clock signal, and provides an analog output. Circuitry provides the analog output and a third clock signal to the analog to digital converter, and the analog to digital converter thereby produces a digital signal. An upper limit comparator receives the upper limit and the digital signal, and provides an upper limit status signal indicating whether the digital signal violates the upper limit. A lower limit comparator receives the lower limit and the digital signal, and provides a lower limit status signal indicating whether the digital signal violates the lower limit.
摘要:
An apparatus comprising (i) an input circuit configured to provide a predetermined voltage tolerance in response to a plurality of control signals and (ii) a control circuit configured to generate the plurality of control signals in response to one or more input signals.
摘要:
A detection circuit for receiving a pair of unstable input signals along a pair of input leads and providing a stable output signal along an output lead, preferably to downstream circuitry. The detection circuit includes a plurality of transistors including a first transistor and a second transistor, wherein at least one of the first and second transistors is configured to turn on upon the detection circuit receiving input signals along the pair of input leads. At least one of the first and second transistors is configured to provide a signal along a lead to circuitry which is configured to condition the output signal and turn on a third transistor. The third transistor is connected to the first and said second transistors such that when the third transistor turns on, the third transistor prevents the first and second transistors from turning on until a new clock signal is received by the detection circuit. Thus, the third transistor generally prevents any new input signals received along the input leads from propagating substantially through the detection circuit. Large differential hysteresis prevents small signals from propagating. The third transistor effectively limits the time period for decision making.